原著論文（1986 - 2024 : ３３８編, 引用状況）：日本語ホームへ, English Main Page,

1. "Vapour Phase Etching of InP Using Anhydrous HCl and PH₃ Gas." J. Electrochem. Soc., vol.133, No.10, p. 2204-2205, 1986. K. Pak, Y. Koide, K. Imai, A. Yoshida, N. Nakamura , Y. Yasuda, and T. Nishinaga.
2. "Behaviour of Zn as Dopant in The Photoluminescence of Al_xGa_1-xN." Solid State Commun. vol. 57, No. 1, p. 17-20, January, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki.
3. "Edge Emission of Al_xGa_1-xN." Solid State Commun. vol. 60, No. 6, p. 509-512, June, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki.
4. 1"ＭＯＶＰＥによるＡｌＧａＮ／α－Ａｌ₂Ｏ₃ヘテロエピタキシーにおけるＡｌＮバッファ層の効果，"　日本結晶成長学会誌，vol.13，No.4，p.8-15，1986年7月，小出康夫, 天野　浩, 平松和政, 澤木宣彦, 赤崎　勇.
5. 1st AlGaN on Si; "Epitaxial Growth and Properties of Al_xGa_1-xN by MOVPE.". J. Electrochem. Soc. vol. 133, No. 9, p. 1956-1960, September, 1986. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto.
6. E_G-Bowing Parameter; "Energy Band-gap Bowing Parameter in An Al_xGa_1-xN Alloy." J. Appl. Phys. vol.61, No.9, p. 4540-4543, May, 1987. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki
7. Role of buffer layer; "Effect of an AlN Buffer Layer on Al_xGa_1-xN/α-Al₂O₃ Heteroepitaxial Growth by MOVPE.." Jpn. J. Appl. Phys. vol. 27, No. 7, p. 1156-1161, July, 1988. Y. Koide, K. Itoh, N. Itoh, N. Sawaki, and I. Akasaki
8. Review; "Effects of AlN Buffer Layer on Crystallographic Structure and Electrical and Optical Properties of GaN and Ga_1-xAl_xN (0<x<0.4) Films Grown on Sapphire Substrates by MOVPE.". J. Crystal Growth, vol. 98, p. 209-219, May, 1989. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki.
9. "Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy." Jpn. J. Appl. Phys. vol. 28, No. 4, p. L690-L693, 1989.4. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
10. "Formation of Si-SiO₂ Interface at Low Temperatures Using Microwave-Excited Plasma." Appl. Surface Sci. vol. 41/42, p. 429-432, 1989.5. S. Zaima, T. Kaida, Y. Koide, and Y. Yasuda
11. "Y-Ba-Cu-O Superconducting Thin Films Prepared by Plasma-Assisted Flash Evaporation." Appl. Phys. Letters, vol. 55, No .3, p. 307-309, 1989.7. Y. Yasuda, Y. Koide, S. Zaima, and N. Sano
12. "Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH₄ Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 99, p.254-258, 1990.2. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
13. "Mechanisms of Silicon Oxidation at Low Temperatures by Microwave- Excited O₂ Gas and O₂-N₂ Mixed Gas." J. Appl. Phys. vol. 67, No. 5, p. 2603-2607, 1990.3. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide
14. "Conduction Mechanism of Leakage Current in Ta₂O₅ Films on Si Prepared by LPCVD." J. Electrochem. Soc. vol. 137, No. 9, p.2876-2879, 1990.9. S. Zaima, T. Furuta, Y. Koide, M. Iida, and Y. Yasuda
15. "Solid Phase Reaction and Electrical Properties in Zr/Si Systems." Appl. Phys. Lett. vol. 57, No.11, p. 1105-1107, 1990.9. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
16. "Growth Processes in The Initial Stage of Ge Films on (811)Si Surfaces by GeH₄ Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 68, No. 5, p. 2164-2167, 1990.9. Y. Koide, K. Itoh, N. Ohshima, S. Zaima, and Y. Yasuda
17. "Anisotropy of Piezoresistance in N-Channel Inversion Layers of Metal-Oxide-Semiconductor Transistors on (001)Si." J. Appl. Phys. vol. 68, No.11, p. 5687-5691, 1990.12. T. Maruyama, S. Zaima, Y. Koide, Y. Kanda, and Y. Yasuda
18. "Effects of Oxidation Conditions on Electrical Properties of SiC-SiO₂ Interface." J. Appl. Phys. vol. 68, No. 12, p. 6304-6308, 1990.12. S. Zaima, K. Onoda, Y. Koide, and Y. Yasuda
19. "Observation of an Ordered Structure in The Initial Stage of Ge/Si Heteroepitaxial Growth." Appl. Phys. Letters, vol. 57, No. 23, p. 2434-2436, 1990.12. N. Ohshima, Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
20. "Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate." Appl. Surface Sci. vol. 48/49, p. 69-75, 1991.5. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
21. "Solid-Phase Reactions and Crystallographic Structures in Zr/Si Systems." J. Appl. Phys., vol. 69, No. 10, p. 7050-7056, 1991.5. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
22. "Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing." J. Crystal Growth, vol. 115, p. 106-111, 1991.11. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
23. "In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 115, p. 365-370, 1991.11. Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
24. "Formation of Interfacial Layers and Electrical Conduction Mechanisms Dominating The Contact Resistivity in Refractory Metal-Si Contacts." Appl. Surface Sci. vol. 56-58, p. 545-550, 1992.4. T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
25. "Observation of Si-SiO₂ Interface States within The Conduction Band by Tunneling Current Spectroscopy." Appl. Surface Sci. vol. 56-58, p. 69-74, 1992.4. M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda
26. "In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH₄ Source Molecular Beam Epitaxy." J. Crystal Growth vol. 120, p. 284-289, 1992.7. Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
27. "Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy." Appl. Surface Sci. vol. 60/61, p. 120-125, 1992.9. N. Ohshima, M. Tomioka, S. Zaima, Y. Koide, and Y. Yasuda
28. "RHEED Studies of Initial Stage of Ge Film Growth on (311)Si by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 128, p. 319-325, 1993.2. Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, and S. Zaima
29. "Fabrication and carrier transport of, one-dimensional quntum wires of p-type silicon." J. Vacuum Sci. & Tech. B, vol. 11, No.1, p. 61-65, 1993.1/2. H.Iwano, S.Zaima, Y.Koide, and Y.Yasuda
30. Kinetics of SiGe growth by GSMBE; "Relationship Between Growth Processes and Strain Relaxation in Si_1-xGe_x Films Grown on (100)Si-(2x1) by Gas Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 73, No. 5, p. 2288-2293, 1993.3. Y.Yasuda, Y.Koide, A.Furukawa, N.Ohshima, and S.Zaima
31. "Study on determing factors of low contact resistivity in transition metal-silicon systems." Appl. Surface Sci. vol. 70/71, p. 624-628, 1993.4. S.Zaima, T.Yamauchi, Y.Koide, and Y.Yasuda
32. "Photoelectron spectroscopic studies on interfacial reactions in Zr/2x1(100) Si systems." J. Vac. Sci. & Tech. A, vol.11, No.5, p. 2619-2622, 1993.10. T. Yamauchi, H. Kitamura, N. Wakai, S. Zaima, Y. Koide, and Y. Yasuda
33. 2"Growth behaviors of the initial Ge two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH₄ Source Molecular Beam Epitaxy." Proc. of the 4th International Conference on Formation of Semiconduct or Interfaces, Forschungszentrum Julich, 14-18 June, 1993 Editors: Bruno Lengeler, Hans Luth, Winfried Monch and Johannes Pollmann (World Scientific, Singapore) p. 502-505, 1994 (ISBN 981-02-1559-2). M. Okada, Y. Koide, S. Zaima , and Y. Yasuda
34. "Photo-irradiation effects on surface reactions of Si momolayer overgrowth by Si₂H₆ Source MBE.." Appl. Surface Sci. vol. 79/80, p. 304-309, 1994.6. Y. Koide, S. Zaima, M. Okada, and Y. Yasuda
35. 3"High-spatial Resolution Analysis of Interfaces of Semiconductor Superlattices by nm-sized Electron Probe." Proceedings of the First International Symposium on Control of Semiconductor Interfaces, (Karuizawa Japan) November 8-12, Elsevier, p. 315-320. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda
36. 4"IV族半導体ヘテロエピタキシー機構，" 日本結晶成長学会誌, vol. 21, No.5, p.361-368, 1994. 9月, 安田幸夫, 財満鎮明, 小出康夫
37. "Ohmic contact materials for compound semiconductors." Proceedings of the Twenty First State-of-the-Art Program on Compound Semiconductiors (SOTAPOCS XXI) p. 163-174, 1995. M. Murakami, T. Oku, Y. Koide, H. Wakimoto, H. Ishikawa, S. Kobayashi, and M. Furumai.
38. "Dependence of electrical properties on work functions of metals contacting to p-type ZnSe." Jpn. J. Appl. Phys. vol. 78, No.5, p.1657-1663, March,1996. O. Tadanaga, Y. Koide, K. Hashimoto, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki. and M. Murakami
39. "Cd-based Ohmic Contact Materials to p-type ZnSe." J. Crystal Growth, vol. 159, p.709-713, April, 1996. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
40. "Effects of small amount of silver added to NiGe Ohmic contacts to n-type GaAs." J. Electrochem. Soc., vol. 143, No. 5, p. 1705-1709, May, 1996. T. Wakimoto, T. Oku, Y. Koide, and M. Murakami
41. "Effects of Surface Cleaning on Electrical porperties on Ni contacting to p-type ZnSe." J. Vac. Sci. & Tech. B, vol. 14, No. 3, p. 1812-1818, June, 1996. H. Ishikawa, K. Tsukui, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
42. "Contact resistance at interfaces between carbide and non-carbide forming metals and p-diamond." Diamond Films and Technology, vol. 6, No. 2, p. 61-76, August, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami.
43. "NiGe-Based Ohmic contacts to n-Type GaAs." J. Electronic Materials, vol. 25, No. 11, p. 1684-1694, November, 1996. F. Furumai, T. Oku, H. Ishikawa, Y. Koide, and M. Murakami.
44. "Cd and Te based Ohmic Contact Materials to p-type ZnSe." J. Electronic Materials, vol. 25, No. 12, p. 1823-1831, December, 1996. K. Hashimoto, Y. Koide, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakam.
45. "Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/metal Interfacesl." J. Appl. Phys., vol. 81, No.2, p.1315-1322, February, 1997. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami.
46. Metal/p-diamond transport mechanism; "Carrier transport mechanism of Ohmic contact to p-type diamond." J. Appl. Phys., vol. 81, No. 10, p. 6815-6821, May, 1997. M. Yokoba, Y. Koide, A. Otsuki, A. Ako, T. Oku, and M. Murakami
47. Carrier transport mechanisms through the metal/p-diamond semiconductor interfaces. Diamond and Related Materials, vol. 6, p. 847-851, June, 1997. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
48. Dpendence of electrical properties on work functions of metals contacting to p-type GaN. Applied Surface Science, 117/118, p.373-378, July, 1997. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
49. "Schottky barriers of metals contacting to p-type ZnSe." J. Appl. Phys., vol. 82, No. 9. p. 2393-2470, September 1, 1997, Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
50. "Effects of intermediate layers on carrier transport mechanisms through p-ZnSe/metals interfeaces." J. Electronic Materials, vol. 27, No. 8, August , p.998-1002, 1998, T. Kagawa, Y. Koide, T. Oku, H. Mori, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
51. 5"Electrical properties of p-ZnSe/metals interfaces with intermediate semiconductor layers", The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2519-2524, 1998. Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
52. 6"Electrical properties at p-ZnSe/metal interfaces of annealed contacts". The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2525-2530, 1998.. T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki.
53. "Electrical properties at p-ZnSe/metals interfaces." J. Electronic Materials, vol. 27, No. 8, August , p.929-935, 1998, T. Kawakami, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
54. "Schottky barrier heights of contact metals to p-ZnSe." J. Electronic Materials, vol 27, No. 6, June, p.772-775, 1998. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
55. Review; "Ohmic Contacts for Compound Semiconductors" Critical Reviews in Solid State and Materials Sciences, vol. 23, No. 1, (CRC Press), p.1-60, 1998.. M. Murakami and Y. Koide.
56. "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." Diamond Films and Technology, vol. 8, No. 6, p. 407-413, 1998. Y. Koide, T. Toyama, and M. Murakami.
57. 7"p-ZnSeおよびp-GaNワイドギャップ半導体のオーム性電極," 電子情報通信学会論文誌, Vol.J81-C-II，No. 10， p. 805-809, 1998年 . 小出康夫, 村上正紀.
58. 8"なぜショットキーバリアは形成されるのか,"応用物理学会誌、第67巻、第2号、p. 149-154, 1998年２月, 小出康夫、村上正紀.
59. O₂-annealed Ohmic contact to p-GaN;"Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN." J. Electronic Materials, vol. 28, No. 3, p. 341-346, 1999. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami.
60. "Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors." Electronics and Communications in Japan Part II Electronics, vol. 82, No.1, p.43-47, (1999). Y. Koide, T.Kawakami, and M. Murakami.
61. "Low-resistance TaTi Ohmic Contacts for p-type GaN." Appl. Phys. Lett., 74(2) p. 275-277, January, 1999. S. Suzuki, T. Kawakami, A. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami.
62. "Formation and deterioration mechanisms of low-resistance TaTi Ohmic contacts for p-GaN." J. Appl. Phys. vol. 86, No. 9, p. 5079-5084, (1999). M. Suzuki, T. Arai, T. Kawakami, S. Kobayashi, Y. Taga, Y. Koide, and M. Murakami.
63. "Effects of NiO on electrical properties of NiAu-based Ohmic contacts for p-type GaN." Appl. Phys. Lett., 75(26), p.4145-4147, (1999). T. Maeda, Y. Koide, and M. Murakami.
64. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Ni and Pd as a Base Metal." J. Appl. Phys. vol. 85, No. 11, June 1, p. 7792-7796, (1999). A. Yamaguchi, T. Okada, Y. Iguchi, and T. Saito, H. Asamizu, Y. Koide, and M. Murakami.
65. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." Inst. Phys. Conf. Ser. No. 162, p.793-798, (1999). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide and M. Murakami.
66. "Ohmic Contacts to p-ZnSe and p-GaN." Inst. Phys. Conf. Ser., vol. 162, p. 787-792, (1999). Y. Koide, T. Kawakami, and M. Murakami.
67. "Effect of the first antimony layer on AuZn ohmic contacts to p-type InP." J. Vac. Sci. & Technol. B vol.18, No. 4 July/August, p.1957-1961 (2000). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami.
68. 9"Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," J. Electron. Mater. vol.29, No. 7, p. 18-19, (2000). Y. Koide, T. Maeda, and M. Murakami.
69. "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Appl. Surf. Sci. vol. 159-160, p. 174-178, 2000. H. Asamizu, A. Yamaguchi, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami.
70. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN." Proceedings of International Workshop of Nitride Semiconductors, IPAP Conference Series 1, p. 821-824, 2000. Y. Koide, T. Arai, and M. Murakami.
71. "Surface damage of diamond field emitter" New Diamond and Frontier Carbon Technology, vol. 10, No. 1, p. 53-53, 2000. T. Asari, M. Itahashi, Y. Koide, and M. Murakami.
72. "Development of Pt-based Ohmic contact materials for p-type GaN." J. Appl. Phys. vol. 89, No. 5, p. 2826-2831. 2001. T. Arai, H. Sueyoshi, M. Moriyama, Y. Koide, and M. Murakami.
73. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. II. Effects of p-type conduction.." Diamond and Related Materials, vol. 10, No. 12, p. 2118-2124, 2001. M. Itahashi, K. Umehara, Y. Koide, and M. Murakam.
74. "Surface damage of diamond-based emitters." New Diamond Films and Frontier Carbon Technology, vol. 11, No. 4, p. 277-283, 2001 Y. Koide, T. Asari, M. Itahashi, and M. Murakami.
75. "CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC." Materials Sci. Forum, vol. 389-393, p. 885-888. 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
76. "Effect of Pd or Pt addition to Ti/Al ohmic contact materials for n-type AlGaN." Appl. Phys. Letts. vol. 80, No. 16, p. 2934-2936. April 22, 2002. S. Murai, H. Masuda, Y. Koide, and M. Murakami.
77. "Effects of sp2/sp3 bonding ratios on field emission properties of diamond-like carbon." Diamond and Related Materials, vol.11, No. 7, p.1429-1435, 2002, Y. Umehara, S. Murai, Y. Koide, and M. Murakam
78. "Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-type 4H-SiC." Materials Transactions, vol. 43, No. 7. p. 1684-1688, 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
79. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. I. Effects of surface morphology." Diamond and Related Materials, 11, p. 1897-1994, 2002. T. Toyama, Y. Koide, and M. Murakami.
80. 10"Influence of oxygen on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 3rd Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Oct. 9-12, 2002, Hakone, Japan, p. 27-30. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
81. "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN." J. Appl. Phys., vol 92, No. 7, p. 3657-3661, 2002. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki.
82. "Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC." Mater. Sci. & Eng. B, 98, No. 3, p. 286-293, 2003. R. Konishi, R. Yasukochi, O. Nakatsuka, M. Moriyama, Y. Koide, and M. Murakami.
83. 11"Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 10th International Symposium for Advanced Materials, March 10-13, 2003, Tsukuba, Japan, p 89-90, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
84. 12"Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." Proceedings of the 1st International National Institute for Materials Science Conference, March 17-19, 2003, Tsububa, Japan, p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
85. "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." Physica Status Solidi.(b), vol. 240, No.2, p. 356-359, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki.
86. "Peculiarity of depletion region in diamond pn-junction." Jpn. J. Appl. Phys. Part 1, vol. 42, No. 1, p. 6800-6803, 2003. Y. Koide.
87. 13"Characteristics of depletion layer in diamond pn-junction." Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Augurst 21-24, 2003, Gangneung, Korea, p. 281-284, 2003.Y. Koide.
88. "Analysis of electron statistics including compensation and deep-dopant effects for phosphous-doped n-type diamond." Jpn. J. Appl. Phys. Part 1, vol. 43, No. 6A, p. 3307-3310, 2004.Y. Koide.
89. "Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor." Diamond Relat. Mat. vol. 13, No. 11-12, p. 1963-1966, 2004. Y. Koide.
90. "Theoretical analysis of electron statistics for n-type diamond." Mater. Sci. Forum, vol. 475-479, p. 1719-1724, 2005.  Y. Koide.
91. "Development of Electrode Materials for Semiconductor Devices." Mater. Sci. Forum,  vol. 475-479, p. 1705-1714, 2005. Masanori Murakami, Y. Koide, Miki Moriyama, Susumu Tsukimoto.
92. "Analysis for Electron Concentrations in n-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond," Jpn. J. Appl. Phys. Part 1, vol. 44, No. 1A, p. 55-59, 2005. Y. Koide.
93. "Enhancement of donor ionization in phosphorus-doped n-diamond." Appl. Surf. Sci. vol. 244, p.26-29 (2005). Y. Koide.
94. “Admittance spectroscopy for phosphorus-doped n-type diamond epilayer,” Appl. Phys. Lett., vol. 86, June 6, p. 2321051-2321053, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
95. 1st Thermally-stable diamond DUV-SPD; “Thermally-Stable visible-blind Diamond Photodiode Using WC Schottky Contact,” Appl. Phys. Lett., vol. 87, July 4, p. 0221051-0221053, 2005. M. Y. Liao, Y. Koide, and J. Alvarez.
96. "Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond," Appl. Phys. Lett. vol. 87, Sept. 12, p. 1135071-1135073, 2005. J. Alvarez, M. Y. Liao, and Y. Koide.
97. "Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor," Materials Transactions JIM, vol.46, No.09 , p. 1965-1968, 2005. Y. Koide, M. Y. Liao, and J. Alvarez.
98. "Special issue on narrow and wide-bandgap semiconductor materials - Preface." Materials Transactions JIM, vol. 46, No. 9, p. 1957-1957, 2005. Y. Koide and M. Murakami
99. Thermal Stability of Diamond Photodiodes Using WC as Schottky Contact." Jpn. J. Appl. Phys., vol. 44, No.11, p. 7832-7838, 2005, M. Y. Liao, J. Alvarez, and Y. Koide.
100. “Tungsten carbide Schottky contact to diamond for thermally stable photodiode,” Diamond Relat. Mater., vol. 14, No. 11-12, p. 2003-2006, 2005, M. Y. Liao, Y. Koide, and J. Alvarez.
101. "Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer," Diamond Relat. Mater. vol. 14, No. 11-12, p. 2011-2014, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
102. "Simulation of Band Diagram for CVD Diamond Surface Conductivity," Jpn. J. Appl. Phys. vol. 44, No. 12, 2005, p. 8378-8382. S. Kono and Y. Koide.
103. "Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode," J. Vac. Sci. & Tech. B, vol. 24(1), p.185-189, 2006. M. Y. Liao, Y. Koide, and J. Alvarez.  
104. "Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitxial diamond layer." Appl. Phys. Lett. vol. 88, p. 0335041-0335043, 2006, M. Y. Liao, Y. Koide, and J. Alvarez.
105. Excellent Diamond MSM-PD; "High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film." Appl. Phys. Lett. 89, 113509, 2006. M. Y. Liao and Y. Koide.
106. "Thermally stable solar-blind diamond UV photodetector," Diamond Relat. Mater. vol.15, p. 1962-1966, 2006. Y. Koide, M. Y. Liao, and J. Alvarez.
107. 14"Thermally Stable Solar-blind Diamond Deep-UV Detector." Application of Nanocrystalline Diamond and Diamond Like Carbon Namterials, edited by Nihar Ranjan Ray, p. 167-172, 2006. Y. Koide.
108. "Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy," Superlattices and Microstructures, Vol. 40, No. 4-6, October-December 2006, p. 343-349, J. Alvarez, F. Houze, J.P. Kleider, M.Y. Liao, and Y. Koide.
109. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film," Materials Science Forum, vol. 546-549, p. 1759-1762, 2007. M. Liao and Y. Koide.
110. "Electric Field Breakdown of Lateral Schottky Diodes of Diamond." Jpn. J. Appl. Phys. vol.46, No.9, p. L196-L198, 2007. T. Teraji, S. Koizumi, Y. Koide, and T. Ito.
111. "Single Schottky-barrier photodiode with interdigitated finger geometry: application to diamond." Appl. Phys. Lett. vol. 90, p. 123507, 2007, M. Y. Liao, J. Alvarez, and Y. Koide.
112. "Mechanism of photoconductivity gain for p-diamond Schottky photodiode." Diamond Relat. Mater. vol. 16, p. 949-952. 2007, Y. Koide and M. Y. Liao.
113. "Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy," Diamond Relat. Mater. vol. 16, p. 1074-1077, 2007, J. Alvarez,  F. Houze, J. P. Kleider, M.Y. Liao, Y. Koide.
114. "Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity," Appl. Phys. Lett. vol. 91, 163510, 2007, M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide.
115. Review; "Metal/Diamond semiconductor interfaces and photodiode application." Appl. Surf. Sci. vol.254, p.6268-6272, 2008. Y. Koide.
116. "Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond." Appl. Surf. Sci., vol.254, p.6273-6276, 2008. T. Teraji, S. Koizumi, Y. Koide, and T. Ito
117. DUV Photo-sensing Mechanism; "Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors," Phys. Rev. B, vol. 78, p. 045112-1-045112-9, 2008. M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider.
118. 15"Solar-Blind Photodetectors Based on Homoepitaxial Diamond Thin Films," Diamond and Related Materials Research, edited by S. Shimizu, Chapter 6, p. 1-21. (Nova Science Publisher, 2008), M. Y. Liao, J. Alvarez, and Y. Koide.
119. "Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate," Diamond Relat. Mater., vol. 17, p. 1234-1243, 2008. M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
120. "Ohmic contact for p-type diamond without postannealing." J. Appl. Phys., vol. 104, p. 016104-1 -016104-3, 2008. T. Teraji, S. Koizumi, and Y. Koide.
121. "Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p⁺-Diamond Substrates." Diamond Relat. Mater., vol. 18, p. 296-298, 2009, M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
122. "Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors," X. Fang, Y. Bando, M.Y. Liao, U-K. Gautam, C. Zhi, B. Dierre, B. Liu, T. Zhai, T. Sekiguchi, Y. Koide, and D. Golberg, Adv. Mater., vol. 21, p. 2034-2039, 2009.
123. "Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces," Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Y. Koide, and Masataka Imura, Appl. Phys. Express, vol. 2, No. 6, p. 065501-1 - 065501-3, 2009.
124. 1st Ferrodielectric/Diamond Capacitor; "Integration of (PbZr_0.52Ti_0.48O₃) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor," M. Y. Liao, M. Imura, X. Fang, K. Nakajima, G. Chen, and Y. Koide, Appl. Phys. Lett. 94, 242901 2009.
125. "Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment," T. Teraji, Y. Garino, Y. Koide, and T. Ito, J. Appl. Phys, 105, 126109, 2009.
126. "High-temperature stability of Au/p-type diamond Schottky diode," T. Teraji, Y. Koide, and T. Ito, Phys. Stat. Sol. RRL 3, No. 6, p. 211-213 2009.
127. "P-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, Phys. Stat. Sol. (a), 206, 2082, 2009.
128. "High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors," X. Fang, S. Xiong, T. Zhai, Y. Bando, M.Y. Liao, U.K. Gautam, Y. Koide, X. Zhang, Y. Qian, and D. Golberg, Adv. Mater., 21, 1, 2009.
129. 1st Flame Sensor using Diamond; "Schottky photodiode using submicron thick diamond epilayer for flame sensing," Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, F. Yoshifusa, Nano-Micro Lett., vol. 1, 1111101, 2009.
130. "Improved ferroelectric properties of Pb(Zr_0.52,Ti_0.48)O₃ thin film on single crystal diamond using CaF₂ layer," M. Y. Liao, K. Nakajima, M. Imura, Y. Koide, Appl. Phys. Lett., vol. 96, 012910, 2010.
131. "Light intensity dependence of photocurrent gain in single-crystal diamond detectors," M. Y. Liao, X. Wang, T. Teraji, S. Koizumi, Y. Koide, Phys. Rev. B, 81, 033304, 2010.
132. "Piezoelectric PbZr_0.52Ti_0.48O₃ thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties," M. Y. Liao, Y. Gotoh, H. Tsuji, K.Nakajima, M. Imura, and Y. Koide, J. Appl. Phys., 107, 024101, 2010.
133. "Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M.Y. Liao, Y. Koide, H. Amano, J. Cryst. Growth, vol. 312, 368-372, 2010.
134. "An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability," X. Fang, Y. Bando, M.Y. Liao, T. Zhai, U.K. Gautam, L. Li, Y. Koide, and D. Golberg, Adv. Func. Mater., vol. 20, No. 3, 500-508, 2010.
135. "Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector," Y. Koide, M. Y. Liao, and M. Imura, Diamond Relat. Mater.,19, 205-207, 2010.
136. "Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, Diamond Relat. Mater., vol. 19, 131-133, 2010.
137. "Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors," T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J.N.A. Yao, Y. Bando, D. Golberg, ACS NANO, vol. 4, No. 3, 1596, 2010.
138. "Fabrication and electrical properties of SrTiO3/diamond junctions," Guang-chao Chen, M. Y. Liao, M. Imura, K. Nakajima, Y. Sugimoto, Y. Koide, Diamond Relat. Mater., 19, 319, 2010.
139. "Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, J. Cryst. Growth, vol. 312, 1325-1328, 2010.
140. "Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches," Y. B. Li, A. Paulsen, I. Yamada, Y. Koide, J. J. Delaunay, Nanotechnology, vol. 21, No. 29, 295502, 2010.
141. "Centimeter-Long V₂O₅ Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties," T. Y. Zhai, H. M. Liu, H. Q. Li, X. S. Fang, M. Y. Liao, L. Li, H. S. Zhou, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 23, p.2547-2552, 2010.
142. "Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, T. Ito, Physica Status Solidi A, vol. 207, p.1460-1463, 2010.
143. "Morphology-tunable In₂Se₃ nanostructures with enhanced electrical and photoelectrical performances via sulfur doping," T. Y. Zhai, Y. Ma, L. Li, X. S. Fang, M. Y. Liao, Y. Koide, J. N. Yao, Y. Bando, D. Golberg, J. Mater. Chem., vol. 20, No. 32, p. 6630-6637, 2010.
144. "Batch production of single-crystal diamond bridges and cantilevers for microelectromechanical systems," M. Y. Liao, C. Li, S. Hishita, Y. Koide, J. Micromech. & Micoreng., vol. 20, No. 8, 085002, 2010.
145. " Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors," L. Li, P. C. Wu, X. S. Fang, T. Y. Zhai, L. Dai, M. Y. Liao, Y. Koide, H. Q. Wan, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 29, p.3161, 2010.
146. "Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts," L. Li, X. Fang, T. Zhai, M.Y. Liao, U.K. Gautam, X. C. Wu, Y. Koide, Y. Bando, and D. Golberg, Adv. Mater., vol. 22, No. 37, 41518, 2010.
147. "Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn₂GeO₄ nanowire," C. Li, Y. Bando, M. Y. Liao, Y. Koide, D. Golberg, Appl. Phys. Lett. vol. 97, No. 16, 16112, 2010.
148. "Single-Crystalline Sb₂Se₃ Nanowires for High-Performance Field Emitters and Photodetectors," T. Y. Zhai, M.F. Ye, L. Li, X. S. Fang, M. Y. Liao, Y. F. Li, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 40, p.4530-4533, 2010.
149. "Extreme dielectric strength in boron doped homoepitaxial diamond," P. N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, S. Scharnholz, Appl. Phys. Lett., vol. 97, No. 22, 223501, 2010.
150. "Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy," M. Imura, T. Ohnishi, M. Sumiya, M. Y. Liao, Y. Koide, H. Amano, M. Lippmaa, Phys. Status Solidi C, vol. 7, No. 10, p.2365-2367, 2010.
151. "Efficient Assembly of Bridged β-Ga₂O₃ Nanowires for Solar-Blind Photodetection," Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J-J. Delaunay, Adv. Func. Mater. vol. 20, No. 22, p.3972-3978, 2010.
152. "Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In₂Ge₂O₇ Nanobelts," L. Li, P. S. Lee, C. Yan, T. Y. Zhai, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 45, p. 5145-5149, 2010.
153. 1st Diamond MEMS Switch; "Suspended single-crystal diamond nanowires for high-performance nanoelectromechanical switches." M. Y. Liao, S. Hishita, E.. Watanabe, S. Koizumi, Y. Koide, Adv. Mater. vol. 22, 5393, 2010.
154. "Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts," Liang Li, Erwin Auer, Meiyong Liao, Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Alois Lugstein, Yasuo Koide, Yoshio Bando and Dmitri Golberg, Nanoscale, vol. 3, No.3, 1120-1126, 2011.
155. 1st AlN/Diamond FET; "Demonstration of diamond field effect transistors by AlN/diamond heterostructure," M. Imura, R. Hayakawa, E. Watanabe, Y. Koide, and H. Amano, Physica Status Solidi-Rapid Research Letters, vol. 5, No.3, 125-127 2011.
156. "High-performance metal-semiconductor-metal InGaN photodetectors using CaF₂ as the insulator," L.W. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, Appl. Phys. Lett. 98, 9, 103502, 2011.
157. "Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes," D. Inoue, A. Miura, T. Nomura, N. Ikeda, Y. Sugimoto, D. Tsuya, and Y. Koide, Appl. Phys. Lett., vol. 98, No. 9, 093113, 2011.
158. "WO₃ nanowires on carbon papers: electronic transport, improved ultraviolet-light photodetectors and excellent field emitters," L. Li, Y. Zhang, XS. Fang, TY. Zhai, MY. Liao MY, XL. Sun, Y. Koide, Y. Bando, D. Golberg, J. Mater. Chem. , vol. 21, No.18, p.6525-6530, 2011.
159. "Sb₂O₃ nanobelt networks for excellent visible-light-range photodetectors," L. Li, Y. X. Zhang, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, and D. Golberg, Nanotechnology 22, No. 6, 165704, 2011.
160. "Bridging wide bandgap nanowires for ultraviolet light detection," Yanbo Li, Miao Zhong, Takero Tokizono, Alexander Paulsen, Meiyong Liao, Y. Koide, Ichiro Yamada, Jean-Jacques Delaunay, Oxide-based Materials and Devices II, Proceedings of SPIE Volume: 7940, DOI: 10.1117/12.874142.
161. "Carbon-Based Materials: Growth, Properties, MEMS/NEMS Technologies, and MEM/NEM Switches"  M. Y. Liao and Y. Koide, Critical Reviews in Solid State and Materials Sciences, vol. 36, Issue 2, 2011, p. 66 - 101, 2011.
162. "Non-destructive detection of killer defects of diamond Schottky barrier diodes," T. Ohmagair, T. Teraji, Y. Koide, J. Appl. Phys. vol. 110, 56105, 2011.
163. "High-temperature ultraviolet detection based on InGaN Schottky photodiodes," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 3, 031115, 2011.
164. "Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 16, 161109, 2011.
165. "Devlelopment of AlN/dimaond heterojunction field effect transistors," M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagatad, M. Liao, Y. Koide, J. Yamamoto, K. Bane, M. Iwaya, H. Amano, Diamond Relat. Mater., vol. 24, 206-209, 2012.
166. "Nanoelectromechanical switch fabricated single crystal diamond: Experiments and modeling," Meiyong Liao, Zouwen Rong, Shunichi Hishita, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Diamond Relat. Mater., vol. 24, 69-73, 2012.
167. "Low contact resistance metals for graphene based devices," E. Watanabe, A. Conwill, D. Tsuya, Y. Koide, Diamond Relat. Mater., vol. 24, 171-174, 2012.
168. "Controlled formation of wrinkled diamond-like carbon (DLC) film on grooved poly(dimethylsiloxane) substrate," S. Nagashima, T. Hasebe, T. Daiju, T. Horikoshi, M. Ochiai, S. Tanigawa, Y. Koide, A. Hotta, T. Suzuki, Diamond and Relat. Mater., vol. 22, 48-51, (2012).
169. "Amorphous silicon diamnd based heterojunctions with high rectification ratio,” M. Boutchich, J. Alvarez, D. Diouf, Pe-R. Cabarrocas, M.Y. Liao, M. Imura, Y. Koide, J-P. Kleider, J. Non-Crystalline Solids, vol. 358, 2110 (2012).
170. "Localized mid-gap-states limited reverse current of diamond Schottky diodes," T. Teraji, M. Y. Liao, and  Y. Koide, J. Appl. Phys. vol. 111, 104503 (2012).
171. "Comprehesive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors, M. Y. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, Jpn. J. Appl. Phys., vol. 51, 090115 (2012).
172. "Chemical Vapor Deposition of ¹²C Isotopically Enriched Polycrystalline Diamond," T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Y. Liao, Y. Koide, J. Isoya, Jpn. J. Appl. Phys., vol. 51, No. 9, 090104 (2012)
173. High-k/Diamond Impact; "Integration of high-dielectric constant Ta₂O₅ oxides on diamond for power devices," S. Cheng, L. Sang, M. Y. Liao, J. Liu, M. Imura, H. Li, and Y. Koide, Appl. Phys. Lett., vol. 101, 232907, 2012.
174. "Nanophotonics based on semiconductor-photonic crystal/quantum dot and metal-/semiconductor-plasmonics," K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya, Y. Koide, Y. Watanabe, N. Ozaki, S. Ohkouchi, T. Nomura, D. Inoue, T. Matsui, A. Miura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No.2, 178 (2012).
175. "Color filter based on surface plasmon resonance utilizing sub-micron periodic hole array in aluminum thin film," N. Ikeda, Y. Sugimoto, M. Ochiai, T. Daijyu, Y. Koide, D. Inoue, A. Miura, T. Nomura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No. 2, 251 (2012).
176. 16"Ploarization filters for visible light consisting of subwavelength slits in an aluminum film," D. Inoue, T. Nomura, A. Miura, H. Fujikawa, K. Sato, N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, J. Lihgtwave Techol. vol. 30, 3463-3467 (2012).
177. "InGaN photodiodes using CaF₂ insulator for high‐temperature UV detection," L-W. Sang, M-Y. Liao, Y. Koide, and M. Sumiya, Physica Status Solidi C, vol. 9, 953-956, (2012).
178. "Band offsets of Al₂O₃ and HfO₂ oxides deposited by atomic layer deposition technique on hydrogenated diamond," J. W. Liu, M. Y. Liao, M. Imura, Y. Koide, Appl. Phys. Lett. vol. 101, 252108 (2012).
179. "Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO₂ as gate dielectric,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide, Appl. Phys. Lett. vol. 102, 112910 (2013).
180. “Interfacial chemical bonding state and band alignment of CaF₂ hydrogenterminated diamond heterojunction,” J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide, J. Appl. Phys. vol. 113, 123706 (2013).
181. “Effective use of source gas for diamond growth with isotopic enrichment,” T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, Appl. Phys. Express. vol. 6, 055601 (2013).
182. "Interfacial electronic band alignment of Ta₂O₅/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy, J. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 38, 24-27 (2013).
183. “Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along [1120] and [1100] Zone-Axes of AlN for Polarity Determination,” M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda, Jpn. J. Appl. Phys vol. 52, 08JE15 (2013).
184. “Temperature and light intensity dependence of photocurrent transport mechanisms in InGaN p-i-n homojunction solar cells,” L. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys. vol. 52, 08JF04 (2013).
185. “Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy,” M Imura, S.Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, J. Appl. Phys. vol. 114, 033505 (2013).
186. “Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures,” L. Sang, J. Hu, R. Zou, Y. Koide, M. Y. Liao, Sci. Rep. vol. 3, 2368 (2013).
187. High-k Gate Oxide Diamond FET; “Interfacial band configuration and electrical properties of LaAlO₃/Al₂O₃/hydrogenated-diamond metal-oxide-semiconductor field effect transistors,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide, J. Appl. Phys. vol. 114, 084108 (2013).
188. High-k Normally-off Diamond FET; “Normally-off HfO₂-gated diamond field effect transistors,”  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 103, 092905 (2013).
189. “Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy,” M. Imura, S. Tsuda, T. Nagata1, H. Takeda1, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi, Appl. Phys. Lett. vol. 103, 162110 (2013).
190. “High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts,” R. Zou, Z. Zhang, J. Hu, L. Sang, Y. Koide, and M. Y. Liao, Nanotechnology, vol. 24, 495701 (2013).
191. “A Multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure,” L. Sang, M. Y. Liao, Q. Liang, M. Takeguchi, B. Dierre, B. Shen, T. Sekiguchi, Y. Koide, M. Sumiya, Adv. Mater., vol. 26, 1414 (2014).
192. "Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond," J. ?ermak, Y. Koide, D. Takeuchi, and B. Rezek, J. Appl. Phys. vol. 115, 053105 (2014).
193. "Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms," T. Wei, C. Zhang, T. Zhai, S. Li, X. Wang, J. Liu, X. Jie, D. Liu, L. Meiyong, Y. Koide, D. Golberg, Y. Bando, Adv. Mater., vol. 26, 3088 (2014).
194. “Diamond field effect transistors with a high-dielectric constant Ta₂O₅ as gate material,” J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide, J. Phys. D: Appl. Phys. vol. 47, 245102-1 (2014).
195. “Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface,” A. Fiori, T. Teraji, Y. Koide, Phys. Status Solidi A , vol. 211, 2363-2366 (2014).
196. "Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces," T. Teraji, Y. Koide, T. Ito, Thin Solid Films, vol. 557, 30 April, 241-248 (2014).
197. "Doping and interface of homoepitaxial diamond for electroc applications," S. Yamazaki, E. Gheeraert, and Y. Koide, MRS Bulletiin, vol. 39, 499 (2014).
198. "Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging," J Alvarez, M Boutchich, J P Kleider, T Teraji, and Y Koide, J. Phys. D: Appl. Phys., 47, 355102 (2014).
199. 17"Nanostructured Wide-bandgap Semiconductors for Ultraviolet Detection," M-Y. Liao, Y. Koide, S. Liwen, Austin Journal of Nanomedicine & Nanotechnology, vol. 2, 1029-1 (2014).
200. Diamond Inverter Circuit; “Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor,” J. Liu, M-Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide, Appl. Phys. Lett. vol. 105, 082110-1 (2014).
201. Summary for High-k Oxide Diamond FETs; “Low on-resistance diamond field effect transistor with high-k ZrO₂ as dielectric,” J. Liu, M-Y. Liao, M. Imura, A. Tanaka, H. Iwai, Y. Koide,  Sci. Reports, vol. 4, 6395-1 (2014).
202. "Diamond Schottky diodes with ideality factors close to 1," A. Fiori, T. Teraji, Y. Koide, Appl. Phys. Lett. vol. 105, 133515-1 (2014).
203. "Energy dissipation in micron- and submicron-thick single crystal diamond," M-Y. Liao, M Toda, S. Liwen, S. Hishita, S Tanaka, Y. Koide,  Appl. Phys. Lett. vol. 105, 251904-1 (2014).
204. "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, M. Imura, J. Liu, and M. Liao, 2014 9th European Microwave Integrated Circuits Conference (EuMIC), October 2014, (2014). DOI: 10.1109/EuMIC.2014.6997814.
205. "Electrical properties of atomic layer deposited HfO₂/Al₂O₃ multilayer on diamond," J. Liu, M-Y. Liao, M. Imura, H. Oosato, E.Watanabe, Y. Koide, Dia. Relat. Mater., vol. 54, 55-58, (2015).
206. "InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties," L-W. Sang, M-W. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys 117, 105706 (2015); doi: 10.1063/1.4914908
207. “Homoepitaxial diamond film growth: high purity high crystalline quality isotopic enrichment and single color center formation,” T. Teraji, T. Yamamoto, K. Watanabe, Y. Koide, J. Isoya, S. Onoda, T. Ohshima, L. J. Rogers, F. Jelezko, P. Neumann, J. Wrachtrup, S. Koizumi, Phys. Status Solidi A-Appl. Mat. 212[11] 2365-2384 (2015),  DOI:10.1002/pssa.201532449
208. "Impedance analysis of Al₂O₃/H-terminated diamond metal-oxide-semiconductor structures," M-Y. Liao, J-W. Liu, L-W. Sang, D. Coathup, J-L Li, J. M. Imura, Y. Koide, H-T. Ye, Appl. Phys. Lett., 106, 083506 (2015).
209. D/E-modes control of MOSFETs: "Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide, J. Appl. Phys. 118, 115704 (2015); doi: 10.1063/1.4930294
210. "Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer," R. G. Banal, M. Imura, and Y. Koide, AIP Advances 5, 097143 (2015); doi: 10.1063/1.4931159
211. “Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al₂O₃ as gate dielectric,” K. Zhang, M.W. Liao, M. Imura, T. Nabatame, A. Ohi, M. Sumiya, Y. Koide, S. Liwen : Appl. Phys. Express 9[12] 121002 (2016), DOI:10.7567/APEX.9.121002.
212. “Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF₂/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy” K. Zhang, M.W. Liao M. Sumiya, Y.Koide, L. Sang. J. Appl. Phys., 120 [18], 185305-1 (2016). DOI:10.1063/1.4967394.
213. Nanoscale multigate MOSFETs: “Design and fabrication of highperformance diamond triple-gate field-effect transistors,” Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, & Y. Koide , Sci. Reprots, 6, 34757 (2016). DOI:10.1038/srep34757
214. "High-k ZrO₂/Al₂O₃ bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, J. Appl. Phys., 120, 124504 (2016); doi: 10.1063/1.4962851.
215. "Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al₂O₃ bilayer gate materials for H-terminated diamond field effect transistors," Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide, J. Appl. Phys., 120, 115307 (2016); doi: 10.1063/1.4962854.
216. "P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas,"K. Zhang, M.Sumiya, M-Y. Liao, Y.Koide, L-W. Sang, Scientific Reports, 6, 23683 (2016), doi:10.1038/srep23683.
217. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO₂ Nanorod Array Heterojunction," Tao Ji , Qian Liu , Rujia Zou , Yangang Sun , Kaibing Xu , Liwen Sang , Meiyong Liao , Y. Koide, Li Yu , and Junqing Hu, Adv. Func. Materials, vol. 26, 1400 (2016). DOI: 10.1002/adfm.201504464.
218. "Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond," Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Y. Koide, and Haitao Ye, Appl. Phys. Lett., 108, 012105 (2016); doi: 10.1063/1.4939650
219. "Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate," R. G. Banal, M. Imura and Y. Koide, INTECH Open Science and Reserch, Chapter 3, pp. 43-58. (2016). DOI: 10.5772/66177
220. "Optical Filters Based on Nano-Sized Hole and Slit Patterns in Aluminum Films," D. INOUE, A. MIURA, T. NOMURA, H. FUJIKAWA, K. SATO, N. IKEDA, D. TSUYA, Y. SUGIMOTO, Y. KOIDE, IEICE TRANSACTIONS on Electronics, vol. E99-C, No.3,  p.358-364, (2016).
221. “Self-assembling diacetylene molecules on atomically flat insulators,” E. Verveniotis, Y. Okawa, M.V. Makarova, Y. Koide, J. Liu, B. Smid, K. Watanabe, T. Taniguchi, K. Komatsu, T. Minari, Xuying Liu, Christian Joachim1, and Masakazu Aono, Phys. Chem. Chem. Phys. 18, 31600-31605, (2016), DOI: 10.1039/C6CP06749B.
222. "Improvement of the quality factor of single crystal diamond mechanical resonators," M.W. Liao, M. Toda, S. Liwen, T. Teraji, M. Imura, and Y. Koide, Jpn. J. Appl. Phys., 56, 024101 (2017). DOI: 10.7567/JJAP.56.024101.
223. "Displacement current of Au/p-diamond Schottky contacts," Toshichika Aokia, Tokuyuki Terajib, Yasuo Koide, Kenji Shiojima, Mater. Sci. Semicond. Process., 70, 207 (2017). DOI: 10.1016/j.mssp.2016.12.012
224. “Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel,” M. Imura, R. Banal, L. Meiyong, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide : J. Appl. Phys. 121, 025702-1, (2017). DOI:10.1063/1.4972979
225. “Nanometer-thin ALD-Al₂O₃ for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.” Ryan G. Banal, M. Imura, D. Tsuya, H. Iwai, Y. Koide. Physica Status Solidi (a). 214 [2] (2017) 1600727. 10.1002/pssa.201600727
226. "Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors," J.W. Liu and Y. Koide, Biosensors and Biodetection, Part of the Methods in Molecular Biology book series (MIMB, volume 1572) 2017, pp. 217-232. DOI: 10.1007/978-1-4939-6911-1_15
227. "Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y₂O₃ oxide insulator grown by electron beam evaporator," J. W. Liu, H. Oosato, M. Y. Liao, and Y. Koide, Appl. Phys. Lett., 110, 203502 (2017). DOI: 10.1063/1.4983091
228. Diamond E/D-logic circuit : "Logic Circuits with Hydrogenated Diamond Field-Effect Transistors," J.W. Liu, H. Ohsato, M..W. Liao, M. Imura, E. Watanabe, and Y. Koide, IEEE Electron Device Lett., vol. 38, No. 7, (2017). 922-934.
229. "Deposition of TiO₂/Al₂O₃ bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters," J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, and Y. Koide, J. Appl. Phys., 121, 224502 (2017). DOI: 10.1063/1.4985066
230. "Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy”, M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A.Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T.Araki, Y.Nanishi. J. Appl. Phys., 121 095703-1 (2017). DOI:10.1063/1.4977201
231. "Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes," Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano, Appl. Phys. Lett., 111, 122102 (2017). DOI: 10.1063/1.4994627
232. "Mechanism of reverse current increase of vertical-type diamond Schottky diodes," T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, Y. Koide. J. Appl. Phys., 122, 135304-1 (2017). DOI: 10.1063/1.4994570
233. "Magnetic Control of MagnetoElectrochemical Cell and Electric Double Layer Transistor," Takashi Tsuchiya, Masataka Imura, Yasuo Koide, and Kazuya Terabe, Sci. Reprots, 7, 10534 (2016). DOI: 10.1038/s41598-017-11114-2
234. "Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001)," Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Y. Koide, Jpn. J. Appl. Phys., 56, 128004 (2017). DOI: 10.7567/JJAP.56.128004
235. Finding Ga₂O₃ IL; "Electron microscopy studies of the intermediate layers at the SiO₂/GaN interface," K. Mitsuishi, K. Kimoto, Y. Irokawa, T. Suzuki, K. Yuge, T. Nabatame, S. Takashima, K.Ueno, M. Edo, K. Nakagawa, and Y. Koide, Jpn. J. Appl. Phys., 56, 110312 (2017). DOI: 10.7567/JJAP.56.110312
236. "Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance," Bing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Appl. Phys. Express, 10, 051001-1 (2017). DOI: 10.7567/apex.10.051001.
237. "Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient," Haihua Wu, Liwen Sang, Tokuyuki Teraji, Tiefu Li, Kongping Wu, Masataka Imura, Jianqiang You, Y. Koide, Meiyong Liao. CARBON. 124, 281 (2017). DOI: 10.1016/j.carbon.2017.08.069.
238. "Effect of sputter deposition atmosphere of AlN on the electrical properties of hydrogen-terminated diamond field effect transistor with AlN/Al₂O₃ stack gate," Ryan G. Banal, Masataka Imura,) Meiyong Liao, Jiangwei Liu, and Y. Koide, Physica Status Solidi (a), 217, 1700463 (2017). DOI: 10.1002/pssa.201700463.
239. "Homoepitaxial diamond chemical vapor deposition for ultra-light doping," T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 70 197 (2017). 10.1016/j.mssp.2016.11.012.
240. "Surface and bulk electronic structures of unintentionally and Mg-doped In_0.7Ga_0.3N epilayer by hard X-ray photoelectron spectroscopy," M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi, Surface and bulk electronic structures of unintentionally and Mg-doped In_0.7Ga_0.3N epilayer by hard X-ray photoelectron spectroscopy. J. Appl. Phys. 123 [9] (2018) 095701-1 10.1063/1.5016574.
241. 18 "窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価," M. Imura, R. G. Banal, M.Y. Liao, T. Matsumoto, A. Kumamoto, N. Shibata, Y. Ikuhara, Y. Koide, J. J. Assoc. for Cryst. Growth. 45 [1] 05-1 (2018). 10.19009/jjacg.3-45-1-05.
242. "Annealing effects on hydrogenated diamond NOR logic circuits," J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide. Appl. Phys. Lett. 112 [15] (2018) 153501-1 10.1063/1.5022590
243. "Suppression in the electrical hysteresis by using CaF₂ dielectric layer for p-GaN MIS capacitors," L. Sang, B. Ren, M. Liao, Y. Koide, M. Sumiya. J. App. Phys. 123 [16] (2018) 161423. 10.1063/1.5010952.
244. "A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO₂/diamond interface," K. Wu, M. Liao, L. Sang, J. Liu, M. Imura, H. Ye, Y. Koide, J. Appl. Phys. 123 [16] (2018) 161599-1 10.1063/1.5002176.
245. "Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates," Y. Lou, C. Song, Y. Chen, L. Singgappulige Rosantha Kumara, N. Palina, O. Seo, S. Hiroi, K. Kajiwara, M. Hoshino, K. Uesugi, Y. Irokawa, T. Nabatame, Y. Koide, and O. Sakata, CrystEngComm. 20 [20] (2018) 286. 10.1039/c8ce00229k.
246. "An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors." J. Liu, Y. Koide, SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
247. "Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer." O. Seo, J. Myung Kim, C. Song, Y. Lou, L. S. R. Kumara, S. Hiroi, Y. Chen, Y. Katsuya, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. AIP Advances. 8 [7] (2018) 075318. 10.1063/1.5042098 .
248. "Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. Applied Physics Express. 11 [8] (2018) 081002. 10.7567/apex.11.081002
249. "Reducing intrinsic energy dissipation in diamond-on-diamond mechanical resonators toward one million quality factor," H. Wu, L. Sang, Y. Li, T. Teraji, T. Li, M. Imura, J. You, Y. Koide, M. Toda, M. Liao. Physical Review Materials. 2 [9] (2018). 10.1103/physrevmaterials.2.090601.
250. "Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)." Y. Irokawa, K. Mitsuishi, T. T. Suzuki, K. Yuge, A. Ohi, T. Nabatame, T. Ohnishi, K. Kimoto, Y. Koide. J. J. Appl. Phys. 57 [9] (2018) 098003-1-098003-3 10.7567/jjap.57.098003.
251. “Interface trap characterization of Al₂O₃/GaN vertical-type MOS capacitors on GaN substrate with surface treatments,” B. Ren, M. Sumiya, M. Liao, Y. Koide, X. Liu, Y. Shen, L. Sang, J. Alloys and Compounds. 767 (2018) 600-605 (2018). 10.1016/j.jallcom.2018.07.150
252. ”Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy,” M. Imura, Y. Ota, R. G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, Y. Koide. Physica Status Solidi (a). 215 [21] (2018) 1800282. 10.1002/pssa.201800282.
253. ”Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates.” A. Kumar, K. Mitsuishi, T. Hara, K. Kimoto, Y. Irokawa, T. Nabatame, S. Takashima, K. Ueno, M. Edo, Y. Koide, Nanoscale Research Letters,” 13 [1] (2018) 10.1186. s11671-018-2804-y
254. 4 inch wafer analysis; “Characterization of a 4-inch GaN wafer by X-ray diffraction topography,” J. Kim, O. Seo, C. Song, Y. Chen, S. Hiroi, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 20 [48] (2018) 7761-7765. 10.1039/c8ce01440j
255. ”Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy.” Y. Irokawa, K. Mitsuishi, T. Nabatame, K. Kimoto, Y. Koide , Jpn. J. Appl. Phys. 57 [11] (2018)118003, 10.7567/JJAP.57.118003
256. "Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. . Phys. Rev. Applied. 11 [2] 024072 (2019) 10.1103/physrevapplied.11.024072.
257. "Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation," M.Y. Liao, L. Sang, T. Teraji, S. Koizumi, Y. Koide. Advanced Materials Technologies. 4 [2] (2019) 1800325, 10.1002/admt.201800325
258. "High-quality SiNx /p-GaN metal-insulator-semiconductor interface with low-density trap states," B. Ren, M.Y. Liao, M. Sumiya, J. Su, X. Liu, Y. Koide, L. Sang. J. Physics D: Applied Physics. 52 [8] (2019), 085105 10.1088/1361-6463/aaf5ba
259. "71Ga NMR characterization of an n-doped free-standing gallium nitride wafer," A. Goto, Y. Irokawa, T. Nabatame, M. Tansho, K. Hashi, S. Ohki, T. Shimizu, Y. Koide. J. J. Appl. Phys.. 58 [3] (2019) 031003 10.7567/1347-4065/aafd1a
260. "Characteristics of Al₂O₃/native oxide/n-GaN capacitors by post-metallization annealing," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, L. Sang, Y. Koide, T. Ohishi, Semicond. Sci. Technol. 34 [3] (2019) 034001 10.1088/1361-6641/aafdbd
261. "Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 21 [14] (2019) 2281-2285 10.1039/c8ce01906a
262. "Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases," M.Y. Liao, L. Sang, T. Shimaoka, M. Imura, S. Koizumi, Y. Koide. Advanced Electronic Materials. 5 [5] (2019) 1800832 10.1002/aelm.201800832
263. "Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer," J. Kim, O. Seo, A. Tanaka, J. Chen, K. Watanabe, Y. Katsuya, T. Nabatame, Y. Irokawa, Y. Koide, O. Sakata. CrystEngComm. 21 [27] (2019) 4036-4041 10.1039/c9ce00463g
264. "Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 C," J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. J. Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
265. "Investigation of Al₂O₃/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique," Y. Irokawa, T. Nabatame, K. Yuge, A. Uedono, A. Ohi, N. Ikeda, Y. Koide. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489
266. "Influence of post-deposition annealing on characteristics of Pt/Al₂O₃/b-Ga₂O₃ MOS capacitors," M. Hirose, T. Nabatame, K. Yuge, E. Maeda, A. Ohi, N. Ikeda, Y. Irokawa, H. Iwai, H. Yasufuku, S. Kawada, M. Takahashi, K. Ito, Y. Koide, H. Kiyono. Microelectronic Engineering. 216 (2019) 111040 10.1016/j.mee.2019.111040
267. "Hydrogen effect on Pt/Al₂O₃/GaN metal-oxide-semiconductor capacitors," Y. Irokawa, T. Nabatame, A. Ohi, N. Ikeda, O. Sakata, Y. Koide. J. J. Appl. Phys. 58 [10] (2019) 100915 10.7567/1347-4065/ab476a
268. "Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor," Z. Zhang, H. Wu, L. Sang, J. Huang, Y. Takahashi, L. Wang, M. Imura, S. Koizumi, Y. Koide, M.Y. Liao. Carbon. 152 (2019) 788-795 10.1016/j.carbon.2019.06.072
269. "High Current Output Hydrogenated Diamond Triple-Gate MOSFETs," J. Liu, H. Ohsato, Bo Da, Y. Koide. IEEE J. Electron Devices Society. 7 (2019) 561-565 10.1109/jeds.2019.2915250
270. "High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal," B. Ren, J. Zhang, M.Y. Liao, J. Huang, L. Sang, Y. Koide, L. Wang. . Optics Express. 27 [6] (2019) 8935 10.1364/oe.27.008935
271. "High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors,"J. Liu, T. Teraji, B. Da, Y. Koide, IEEE Electron Device Lett. 40 [11] pp.1748-1751, (2019) DOI: 10.1109/LED.2019.2942967
272. "Boosting the doping efficiency of Mg in p -GaN grown on the free-standing GaN substrates," L. Sang, B. Ren, R. Endo, T. Masuda, H. Yasufuku, M.Y. Liao, T. Nabatame, M. Sumiya, Y. Koide, Appl. Phys. Lett., 115 (17), (2019) art. no. 172103 DOI: 10.1063/1.5124904
273. "High-k oxides on hydrogenated-diamond for metal-oxide-semiconductor field-effect transistors [Invited]," Y. Koide, IEEE International Conference on Microelectronic Test Structures, 2019-March, art. no. 8730974, pp. 40-46. DOI: 10.1109/ICMTS.2019.8730974
274. "Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, L. Sang, Y. Koide, T. Ohishi, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, art. no. 8731166, pp. 368-370 (2019). DOI: 10.1109/EDTM.2019.873116
275. "Single crystal diamond micromechanical and nanomechanical resonators," M.Y. Liao, Y. Koide, L., Sang, Topics in Applied Physics, 121, pp. 91-121. (2019) DOI: 10.1007/978-3-030-12469-4_4
276. "Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field-Effect Transistors Based on 2D Hole Gas," M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide, Physica Status Solidi (A) Applications and Materials Science, art. no. 1900538, (2019) DOI: 10.1002/pssa.201900538.
277. “Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates,” Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang, Applied Sciences; 9 [14] (2019), DOI: 2895 10.3390/app9142895.
278. “Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors.” J. Liu, T. Teraji, B. Da, H. Ohsato, Y. Koide, IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685, 10.1109/ted.2020.2972979
279. .“Enhanced magnetic sensing performance of diamond MEMS magnetic sensor with boron-doped FeGa film,” Z. Zhang, L. Sang, J. Huang, W. Chen, L. Wang, Y. Takahashi, S. Mitani, Y. Koide, S. Koizumi, M. Liao. Carbon. 170 (2020) 294-301, 10.1016/j.carbon.2020.08.049
280. “Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors.” J. W. Liu, H. Oosato, B. Da, Y. Koide. Applied Physics Letters. 117 [16] (2020) 163502, 10.1063/5.0023086
281. “Surface potential imaging and characterizations of a GaN p-n junction with Kelvin probe force microscopy,” T.Nakamura, N. Ishida, K. Sagisaka, Y. Koide. AIP Advances. 10 [8] (2020) 085010 10.1063/5.0007524
282. “Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS,” H.Wu, Z. Zhang, L. Sang, T. Li, J. You, M. Imura, Y. Koide, M. Liao. Corrosion Science. 170 (2020) 108651, 10.1016/j.corsci.2020.108651
283. “Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor,” B. Ren, M. Liao, M. Sumiya, J. Li, L. Wang, X. Liu, Y. Koide, L. Sang, Journal of Alloys and Compounds. 829 (2020) 154542 10.1016/j.jallcom.2020.154542
284. “Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing,” Z. Zhang, H. Wu, L. Sang, Y. Takahashi, J. Huang, L. Wang, M. Toda, I. M. Akita, Y. Koide, S. Koizumi, M. Liao, ACS Applied Materials & Interfaces. 12 [20] (2020) 23155-23164, 10.1021/acsami.0c06593
285. “Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures,” Z. Zhang, Y. Wu, L. Sang, H. Wu, J. Huang, L. Wang, Y. Takahashi, R. Li, S. Koizumi, M. Toda, I. M. Akita, Y. Koide, M. Liao, Materials Research Letters. 8 [5] (2020) 180-186 10.1080/21663831.2020.1734680
286. “Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond,” X. Yuan, J. Liu, S. Shao, J. Liu, J. Wei, B. Da, C. Li, Y. Koide. AIP Advances. 10 [5] (2020) 055114 10.1063/5.0008167
287. “Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators,” H. Wu, Z. Zhang, L. Sang, T. Li, J. You, Y. Lu, Y. Koide, M. Liao, Diamond and Related Materials. 103 (2020) 107711, 10.1016/j.diamond.2020.107711
288. “Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography,” J. Kim, O. Seo, S. Hiroi, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. RSC Advances. 10 [4] (2020) 1878-1882, 10.1039/c9ra08882b
289. “Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance,” J. Liu, T. Teraji, B. Da, Y. Koide. IEEE Transactions on Electron Devices. 68 [8] 3963-3967. (2021). 10.1109/ted.2021.3087115
290. “Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C,” X. Yuan, J-W. Liu, J-L Liu, J. Wei, B. Da, C. Li, Y. Koide, Coatings. 11 [4] 470 (2021). 10.3390/coatings11040470
291. “Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition,” T. Nabatame, E. Maeda, M. Inoue, . Hirose, Y. Irokawa, A. Ohi, N. Ikeda, T. Onaya, K. Shiozaki, R. Ochi, T. Hashizume, Y. Koide, J. Vac. Sci. & Technol. A. 39 [6] 062405 (2021). 10.1116/6.0001334
292. “The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces,” T.Tsuchiya, M. Takayanagi, K. Mitsuishi, M. Imura, S. Ueda, Y. Koide, T. Higuchi, K. Terabe, Communications Chemistry. 4 [1] (2021). 10.1038/s42004-021-00554-7
293. “Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells,” L. Sang, M. Sumiya, M-Y Liao, Y. Koide, X. Yang, B. Shen. Appl. Phys. Lett. 119 [20] 202103 (2021). 10.1063/5.0071506
294. “Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing,” X. Shen, H. Sun, L. Sang, M. Imura, Y. Koide, S. Koizumi, M-Y Liao, Physica Status Solidi (RRL) – Rapid Research Letters. 15 [9] (2021) 2100352 10.1002/pssr.202100352
295. “Temperature dependence of Young's modulus of single-crystal diamond determined by dynamic resonance,” X. Shen, K. Wu, H. Sun, L. Sang, Z. Huang, M. Imura, Y. Koide, S. Koizumi, M-Y Liao. Diamond and Related Mater. 116 108403 (2021). 10.1016/j.diamond.2021.108403
296. “Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates.” Y. Irokawa, T. Ohki, T. Nabatame, Y. Koide. Jpn. J. Appli. Phys. 60 [6] 068003 (2021). 10.35848/1347-4065/ac0260
297. “Thermal mismatch induced stress characterization by dynamic resonance based on diamond MEMS,” H. Sun, X. Shen, L. Sang, M. Imura, Y. Koide, Ji. You, Tie-Fu Li, S. Koizumi, M-Y. Liao. Appl. Phys. Express. 14 [4] 045501 (2021). 10.35848/1882-0786/abe7b0
298. “Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography,” J. Kim, O. Seo, L. S. R. Kumara, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 23 [7] 1628-1633 (2021). 10.1039/d0ce01572e
299. “Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer,” T. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide. Appl. Phys. Lett. 118 [7] 072103 (2021). 10.1063/5.0034584
300. “Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs,” J. Liu, O. Auciello, E. de Obaldia, B. Da, Y. Koide. Carbon. 172 112-121 (2021). 10.1016/j.carbon.2020.10.031
301. “Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing,” M. Hirose, T. Nabatame, Y. Irokawa, E. Maeda, A. Ohi, N. Ikeda, L. Sang, Y. Koide, H. Kiyono. J. Vac. Sci. & Technol. A. 39 [1] 012401 (2021) 10.1116/6.0000626
302. "Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection," Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide. Functional Diamond. 2 [1], 67-174 (2022). 110.1080/26941112.2022.2150526
303. "Edge-of-chaos learning achieved by ion-electron–coupled dynamics in an ion-gating reservoir," Daiki Nishioka, Takashi Tsuchiya, Wataru Namiki, Makoto Takayanagi, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Science Advances. 8 [50] (2022). 10.1126/sciadv.ade1156
304. "Natural band alignment of BAlN and BGaN alloys," Yuichi Ota, Masataka Imura, Ryan G Banal, Yasuo Koide. Journal of Physics D: Applied Physics. 55 [45] (2022). 455102 10.1088/1361-6463/ac8fff
305. "Enhancement of magnetic sensing performance of diamond resonators coupling with magnetic-strictive FeGa films by various interlayers," Zilong Zhang, Liwen Sang, Jian Huang, Linjun Wang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Carbon. 200 401-409, (2022) 10.1016/j.carbon.2022.08.086
306. "Effect of gas pressure on the quality-factor of single-crystal diamond micro cantilevers," Yinling Chen, Liwen Sang, Satoshi Koizumi, Yasuo Koide, Xiaoxi Liu, Meiyong Liao. Diamond and Related Materials. 129 109340 (2022) 10.1016/j.diamond.2022.109340
307. "Identification of a nitrogen vacancy in GaN by scanning probe microscopy," Keisuke Sagisaka, Oscar Custance, Nobuyuki Ishida, Tomonori Nakamura, Yasuo Koide. Physical Review B. 106 [11] 115309 (2022). 10.1103/physrevb.106.115309
308. "Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics," Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology. 11 [8] (2022) 085010 10.1149/2162-8777/ac8a70
309. "Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications," Xiulin Shen, Zhenfei Lv, Kimiyoshi Ichikawa, Huanying Sun, Liwen Sang, Zhaohui Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Ultramicroscopy. 234 (2022) 113464 10.1016/j.ultramic.2022.113464
310. "Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs," Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices. 69 [3] (2022) 1181-1185 10.1109/ted.2022.3140699
311. "Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium," Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide, AIP Advances. 12 [1] (2022) 015203 10.1063/5.0076706
312. “Low-Resistance Ohmic Contact Materials for p-GaN Based on Metallurgy,” Yasuo Koide, COJ Technical & Scientific Research. 4 [2] (2023) 000585.
313. “Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates,” Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide. Nanomaterials. 13 [7] (2023) 1256. 10.3390/nano13071256.
314. “Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS. Diamond and Related Materials,” Guo Chen, Zilong Zhang, Yasuo Koide, Satoshi Koizumi, Zhaohui Huang, Meiyong Liao. 138 (2023) 110240. 10.1016/j.diamond.2023.110240.
315. “Characteristics of GaN/High-k Capacitors Under Positive Bias Stress,” Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi. (Invited), ECS Transactions. 112 [1] (2023) 109-117. 10.1149/11201.0109ecst
316. “On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film,” Zilong Zhang, Wen Zhao, Guo Chen, Masaya Toda, Satoshi Koizumi, Yasuo Koide, Meiyong Liao. Advanced Functional Materials. 33 [27] (2023) 2300805. 10.1002/adfm.202300805.
317. “Ultrafast-switching of an all-solid-state electric double layer transistor with a porous yttria-stabilized zirconia proton conductor and the application to neuromorphic computing,” Makoto Takayanagi, Daiki Nishioka, Takashi Tsuchiya, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe, Materials Today Advances. 18 (2023) 100393. 10.1016/j.mtadv.2023.100393.
318. “Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs,” Yoshihiro Irokawa, Kazutaka Mitsuishi, Takatomi Izumi, Junya Nishii, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology. 12 [5] (2023) 055007. 10.1149/2162-8777/acd1b4.
319. "Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition,” Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices. 70 [5] (2023) 2199-2203. 10.1109/ted.2023.3256349
320. “Accelerated/decelerated dynamics of the electric double layer at hydrogen-terminated diamond/Li+ solid electrolyte interface,” Makoto Takayanagi, Takashi Tsuchiya, Daiki Nishioka, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Materials Today Physics. 31 (2023) 101006. 10.1016/j.mtphys.2023.101006.
321. “Diamond FET and MEMS Devices,” (conference) Y. Koide, J. Liu, M.Y. Liao, M. Imura, 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (2023), Cleveland, OH, USA, 10.1109/ISAF53668.2023.10265422
322. “Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir” (conference), D. Nishioka, T. Tsuchiya, W. Namiki, M. Imura, Y. Koide, T. Higuchi, K. Terabe, 2023 International Conference on Solid State Devices and Materials (2023), Nagoya Congress Center, 10.7567/SSDM.2023.B-6-02.
323. “Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on a Large-Area Wafer” (conference), J. Liu, H. Ohsato, D. Bo, Y. Koide, 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT) (2023), Qingdao, China, 10.1109/ICEICT57916.2023.10245613.
324. "Oxygen-termination effect on the surface energy dissipation in diamond MEMS,” Keyun Gu, Zilong Zhang, Guo Chen, Jian Huang, Yasuo Koide, Satoshi Koizumi, Wen Zhao, Meiyong Liao, Carbon, 225 (2024) 119159. 10.1016/j.carbon.2024.119159.
325. “Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods,” Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda; Journal of Crystal Growth. 635 (2024) 127701.
326. ”A high-performance deep reservoir computer experimetally demonstrated with ion-gating reservoirs," Daiki Nishioka, Takashi, Tsuchiya, Masataka, Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe, Communication Engineering, 3[1] (2024) 81, 10.1016/j.jcrysgro.2024.127701.
327. “Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms,” Zilong Zhang, Keyun Gu, Guo Chen, Liwen Sang, Tokuyuki Teraji, Yasuo Koide, Satoshi Koizumi, Masaya Toda, Meiyong Liao; Advanced Materials Technologies. 9[13] (2024) 2400153. 10.1002/admt.202400153.
328. “Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers,” Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji, Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori, Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide; Journal of Applied Physics. 135[18] (2024) 185701. 10.1063/5.0201931.
329. “Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen,"Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology. 13[4] (2024) 045002. 10.1149/2162-8777/ad3959.
330. “Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs.” Jiangwei Liu, Tokuyuki, Teraji, Bo Da, Yasuo Koide; IEEE Transactions on Electron Devices. 71[3] (2024) 1764-1768. 10.1109/ted.2024.3356468
331. “Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors,” J. W. Liu, T. Teraji, Y. Koide; Applied Physics Letters. 124[7] (2024) 072103. 10.1063/5.0194424.
332. “Inverted input method for computing performance enhancement of the ion-gating reservoir,” Yu Yamaguchi, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Masataka, Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Applied Physics Express. 17[2] (2024) 024501. 10.35848/1882-0786/ad2906.
333. "Higher-order resonance of single-crystal diamond cantilever sensors toward high f‧Q products," Guo Chen, Zilong Zhang, Keyun Gu, Liwen Sang, Satoshi Koizumi, Masaya Toda, Haitao Ye, Yasuo Koide, Zhaohui Huang, and Meiyong Liao, Appl. Phys. Express, 17, 021001 (2024). 10.35848/1882-0786/ad2027
334. "Post-metallization annealing effect on electrical properties of β-Ga₂O₃/Al₂O₃/Pt MOS capacitors after post-deposition annealing," M. Hirose, T. Nabatame, K. Yuge, E. Maeda, A. Ohi, N. Ikeda ,Y. Irokawa, H. Iwai, H. Yasufuku, S. Kawada, M. Takahashi, K. Ito, Y. Koide, H. Kiyone, J. Appl. Phys. (2024) in press.
335. "Low-energy Dissipation Diamond MEMS," G. Chen, S. Koizumi, Y. Koide, M.Y. Liao, Accounts of Materials Research, (2024) in press.
336. "A powerful method to improve dielectric/GaN interface properties: a dummy SiO2 process," Y. Irokawa, T. Nabatame, T. Sawada, M. Miyamoto, H. Miura, K. Tsukagoshi, Y. Koide, ECS J. Solid State Sci. & Technol., (2024) in press.
337. "Calibration of binding energy and clarification of interfacial band bending for Al₂O₃/diamond heterojunction," J. Liu, D. Bo, T. Teraji, Y. Koide, Appl. Phys. Lett. (2024) in press.
338. "Synergistic effect of surface states and deep defects for ultrahigh gain deep-ultraviolet photodetector with low-voltage operation," G. Chen, S. Koizumi, Y. Koide, M.Y. Liao, Func. Mater. Sci. (2024) in progress.

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