Alloriginal_citation

Citations											Year	Papers
9/24 /03	8/4 /04	9/20 /05	9/30 /06	10/21 /07	9/1 /08	7/15 /09	12/30 /10	12/30 /11	3/30 /13	5/11 /15	Year	Papers
7	7	7	7	7	7	7	7	7	7		86 (5)	1. "Vapour Phase Etching of InP Using Anhydrous HCl and PH3 Gas." J. Electrochem. Soc., vol.133, No.10, p. 2204-2205, 1986. K. Pak, Y. Koide, K. Imai, A. Yoshida, N. Nakamura , Y. Yasuda, and T. Nishinaga.
8	8	8	8	8	9	9	9	8	8			2. "Behaviour of Zn as Dopant in The Photoluminescence of AlxGa1-xN." Solid State Commun. vol. 57, No. 1, p.17-20, January, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki.
43	48	49	49	51	53	57	57	57	58			3."Edge Emission of AlxGa1-xN." Solid State Commun. vol. 60, No. 6, p.509-512, June, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki.
0	0	0	0	0	0	0	0	0	0			4. "ＭＯＶＰＥによるＡｌＧａＮ／α－Ａｌ2Ｏ3ヘテロエピタキシーにおけるＡｌＮバッファ層の効果，"　日本結晶成長学会誌，vol.13，No.4，p.8-15，1986年7月，小出康夫, 天野　浩, 平松和政, 澤木宣彦, 赤崎　勇.
47	52	53	53	54	54	56	60	62	62			5. "Epitaxial Growth and Properties of AlxGa1-xN by MOVPE.". J. Electrochem. Soc. vol. 133, No. 9, p.1956-1960, September, 1986. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto
103	112	117	119	124	125	134	136	141	141		87 (1)	6. "Energy Band-gap Bowing Parameter in An AlxGa1-xN Alloy." J. Appl. Phys. vol.61, No.9, p.4540-4543, May, 1987. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki
53	55	58	60	64	66	75	79	80	80		88 (1)	7. "Effect of an AlN Buffer Layer on AlxGa1-xN/α-Al2O3 Heteroepitaxial Growth by MOVPE.." Jpn. J. Appl. Phys. vol. 27, No. 7, p.1156-1161, July, 1988. Y. Koide, K. Itoh, N. Itoh, N. Sawaki, and I. Akasaki
382	409	432	446	468	483	520	530	540	559		89 (4)	8. "Effects of AlN Buffer Layer on Crystallographic Structure and Electrical and Optical Properties of GaN and Ga1-xAlxN (0<x<0.4) Films Grown on Sapphire Substrates by MOVPE.". J. Crystal Growth, vol. 98, p.209-219, May, 1989. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki.
25	25	25	26	26	26	26	26	27	28			9. "Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy." Jpn. J. Appl. Phys. vol. 28, No. 4, p. L690-L693, 1989.4. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
6	6	6	6	6	6	6	6	6	6			10. "Formation of Si-SiO2 Interface at Low Temperatures Using Microwave-Excited Plasma." Appl. Surface Sci. vol. 41/42, p.429-432, 1989.5. S. Zaima, T. Kaida, Y. Koide, and Y. Yasuda
7	7	7	7	7	7	7	7	7	7			11. "Y-Ba-Cu-O Superconducting Thin Films Prepared by Plasma-Assisted Flash Evaporation." Appl. Phys. Letters, vol. 55, No .3, p.307-309, 1989.7. Y. Yasuda, Y. Koide, S. Zaima, and N. Sano
33	33	34	35	35	35	36	37	38	38		90 (8)	12. "Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 99, p.254-258, 1990.2. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
22	22	23	24	30	30	32	36	38	38			13. "Mechanisms of Silicon Oxidation at Low Temperatures by Microwave- Excited O2 Gas and O2-N2 Mixed Gas." J. Appl. Phys. vol. 67, No. 5, p.2603-2607, 1990.3. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide
40	41	41	42	42	44	48	49	52	55			14. "Conduction Mechanism of Leakage Current in Ta2O5 Films on Si Prepared by LPCVD." J. Electrochem. Soc. vol. 137, No. 9, p.2876-2879, 1990.9. S. Zaima, T. Furuta, Y. Koide, M. Iida, and Y. Yasuda
15	15	15	15	15	15	15	17	17	17			15. "Solid Phase Reaction and Electrical Properties in Zr/Si Systems." Appl. Phys. Letters vol. 57, No.11, p.1105-1107, 1990.9. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
16	16	16	16	16	16	17	17	17	17			16. "Growth Processes in The Initial Stage of Ge Films on (811)Si Surfaces by GeH4 Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 68, No. 5, p.2164-2167, 1990.9. Y. Koide, K. Itoh, N. Ohshima, S. Zaima, and Y. Yasuda
2	2	2	2	3	4	6	6	6	6			17. "Anisotropy of Piezoresistance in N-Channel Inversion Layers of Metal-Oxide-Semiconductor Transistors on (001)Si." J. Appl. Phys. vol. 68, No.11, p.5687-5691, 1990.12. T. Maruyama, S. Zaima, Y. Koide, Y. Kanda, and Y. Yasuda
16	16	16	16	17	18	20	21	22	22			18. "Effects of Oxidation Conditions on Electrical Properties of SiC-SiO2 Interface." J. Appl. Phys. vol. 68, No. 12, p.6304-6308, 1990.12. S. Zaima, K. Onoda, Y. Koide, and Y. Yasuda
22	22	22	22	22	22	22	22	22	22			19. "Observation of an Ordered Structure in The Initial Stage of Ge/Si Heteroepitaxial Growth." Appl. Phys. Letters, vol. 57, No. 23, p.2434-2436, 1990.12. N. Ohshima, Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
12	13	13	13	13	13	13	13	13	13		91 (4)	20. "Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate." Appl. Surface Sci. vol. 48/49, p.69-75, 1991.5. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda.
34	36	36	38	39	41	47	52	53	55			21. "Solid-Phase Reactions and Crystallographic Structures in Zr/Si Systems." J. Appl. Phys., vol. 69, No. 10, p. 7050-7056, 1991.5. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda.
6	6	6	6	6	6	6	6	6	6			22. "Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing." J. Crystal Growth, vol. 115, p.106-111, 1991.11. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
14	14	14	14	14	14	14	14	14	14			23. "In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 115, p.365-370, 1991.11. Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
7	4	4	4	4	4	5	5	5	5		92 (4)	24. "Formation of Interfacial Layers and Electrical Conduction Mechanisms Dominating The Contact Resistivity in Refractory Metal-Si Contacts." Appl. Surface Sci. vol. 56-58, p. 545-550, 1992.4. T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
4	1	1	1	1	1	2	2	2	2			25. "Observation of Si-SiO2 Interface States within The Conduction Band by Tunneling Current Spectroscopy." Appl. Surface Sci. vol. 56-58, p.69-74, 1992.4. M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda
1	1	1	1	1	1	1	1	1	1			26. "In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source Molecular Beam Epitaxy." J. Crystal Growth vol. 120 p.284-289, 1992.7. Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
3	3	3	3	3	3	3	3	3	3			27. "Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy." Appl. Surface Sci. vol. 60/61, p.120-125, 1992.9. N. Ohshima, M. Tomioka, S. Zaima,Y. Koide, and Y. Yasuda
0	0	0	0	0	0	0	0	0	0		93 (5)	28. "RHEED Studies of Initial Stage of Ge Film Growth on (311)Si by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 128, p.319-325, 1993.2. Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, and S. Zaima
6	6	6	6	6	7	7	7	7	7			29. "Fabrication and carrier transport of, one-dimensional quntum wires of p-type silicon." J. Vacuum Sci. & Tech. B, vol. 11, No.1, p.61-65, 1993.1/2. H.Iwano, S.Zaima, Y. Koide, and Y.Yasuda
14	14	14	14	14	14	15	15	15	15			30. "Relationship Between Growth Processes and Strain Relaxation in Si1-xGex Films Grown on (100)Si-(2x1) by Gas Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 73, No. 5, p.2288-2293, 1993.3. Y.Yasuda, Y. Koide, A.Furukawa, N.Ohshima, and S.Zaima
9	9	9	9	9	9	11	11	11	11			31. "Study on determing factors of low contact resistivity in transition metal-silicon systems." Appl. Surface Sci. vol. 70/71, p.624-628, 1993.4. S.Zaima, T.Yamauchi, Y. Koide, and Y.Yasuda
10	10	11	12	12	12	13	14	14	15			32. "Photoelectron spectroscopic studies on interfacial reactions in Zr/2x1(100) Si systems." J. Vac. Sci. & Tech. A, vol.11, No.5, p.2619-2622, 1993.10. T. Yamauchi, H. Kitamura, N. Wakai, S. Zaima, Y. Koide, and Y. Yasuda
0	0	0	0	0	0	0	0	0	0		94 (4)	33. "Growth behaviors of the initial Ge two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH4 Source Molecular Beam Epitaxy." Proc. of the 4th International Conference on Formation of Semiconduct or Interfaces, Forschungszentrum Julich, 14-18 June, 1993 Editors: Bruno Lengeler, Hans Luth, Winfried Monch and Johannes Pollmann (World Scientific, Singapore) p.502-505,1994 (ISBN 981-02-1559-2). M. Okada, Y. Koide, S. Zaima , and Y. Yasuda
1	1	1	1	1	1	1	1	1	1			34. "Photo-irradiation effects on surface reactions of Si momolayer overgrowth by Si2H6 Source MBE.." Appl. Surface Sci. vol. 79/80 p. 304-309, 1994.6. Y. Koide, S. Zaima, M. Okada, and Y. Yasuda
0	0	0	0	0	0	0	0	0	0			35. "High-spatial Resolution Analysis of Interfaces of Semiconductor Superlattices by nm-sized Electron Probe." Proceedings of the First International Symposium on Control of Semiconductor Interfaces, (Karuizawa Japan) November 8-12, Elsevier, p. 315-320. 1994. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda
0	0	0	0	0	0	0	0	0	0			36. "IV族半導体ヘテロエピタキシー機構，" 日本結晶成長学会誌, vol. 21, No.5, p.361-368, 1994. 9月, 安田幸夫, 財満鎮明, 小出康夫
0	0	0	0	0	0	0	0	0	0		95 (1)	37. "Ohmic contact materials for compound semiconductors." Proceedings of the Twenty First State-of-the-Art Program on Compound Semiconductiors (SOTAPOCS XXI) p. 163-174, 1995.
13	13	13	13	13	13	13	13	14	14		96 (7)	38. "Dependence of electrical properties on work functions of metals contacting to p-type ZnSe." Jpn. J. Appl. Phys. vol. 78, No.5, p.1657-1663, March,1996. O. Tadanaga, Y. Koide, K. Hashimoto, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki. and M. Murakami
8	8	8	8	8	8	8	8	8	8			39. "Cd-based Ohmic Contact Materials to p-type ZnSe." J. Crystal Growth, vol. 159, p.709-713, April, 1996. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
3	5	5	5	5	5	5	5	5	5			40. "Effects of small amount of silver added to NiGe Ohmic contacts to n-type GaAs." J. Electrochem. Soc., vol. 143, No. 5, p. 1705-1709, May, 1996. T. Wakimoto, T. Oku, Y. Koide, and M. Murakami
13	13	14	14	14	14	16	17	17	18			41. "Effects of Surface cleaning on electrical porperties on Ni contacting to p-type ZnSe." J. Vac. Sci. & Tech. B, vol. 14, No. 3, p. 1812-1818, June, 1996. H. Ishikawa, K. Tsukui, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
4	4	4	4	4	4	4	4	4	5			42. "Contact resistance at interfaces between carbide and non-carbide forming metals and p-diamond." Diamond Films and Technology, vol. 6, No. 2, p. 61-76, August, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
6	7	7	7	7	7	7	7	8	9			43. "NiGe-Based Ohmic contacts to n-Type GaAs." J. Electronic Materials, vol. 25, No. 11, p. 1684-1694, November, 1996. F. Furumai, T. Oku, H. Ishikawa, Y. Koide, and M. Murakami
7	7	7	7	7	7	8	8	8	8			44. "Cd and Te based Ohmic Contact Materials to p-type ZnSe." J. Electronic Materials, vol. 25, No. 12, p. 1823-1831, December, 1996. K. Hashimoto, Y. Koide, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
89	97	106	117	122	124	140	144	149	153		97 (5)	45. "Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/metal Interfacesl." J. Appl. Phys., vol. 81, No.2, p.1315-1322, February, 1997. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
11	11	13	18	23	25	27	34	36	36			46. "Carrier transport mechanism of Ohmic contact to p-type diamond." J. Appl. Phys., vol. 81, No. 10, p. 6815-6821, May, 1997. M. Yokoba, Y. Koide, A. Otsuki, A. Ako, T. Oku, and M. Murakami
6	6	6	6	6	7	9	9	9	9			47. "Carrier transport mechanisms through the metal/p-diamond semiconductor interfaces." Diamond and Related Materials, vol. 6, p. 847-851, June, 1997. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
12	13	15	16	18	18	21	22	24	26			48. "Dpendence of electrical properties on work functions of metals contacting to p-type GaN." Applied Surface Science, 117/118, p.373-378, July, 1997. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
9	9	9	11	11	11	13	13	13	14			49. "Schottky barriers of metals contacting to p-type ZnSe." J. Appl. Phys., vol. 82, No. 9. p. 2393-2470, September 1, 1997, Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
0	0	0	0	0	0	0	0	0	0		98 (9)	50. "Effects of intermediate layers on carrier transport mechanisms through p-ZnSe/metals interfeaces." J. Electronic Materials, vol. 27, No. 8, August , p.998-1002, 1998, T. Kagawa, Y. Koide, T. Oku, H. Mori, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
0	0	0	0	0	0	0	0	0	0			51. "Electrical properties of p-ZnSe/metals interfaces with intermediate semiconductor layers", The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2519-2524, 1998. Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
0	0	0	0	0	0	0	0	0	0			52. "Electrical properties at p-ZnSe/metal interfaces of annealed contacts". The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2525-2530, 1998.. T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
1	1	1	1	1	1	1	1	1	1			53. "Electrical properties at p-ZnSe/metals interfaces." J. Electronic Materials, vol. 27, No. 8, August , p.929-935, 1998, T. Kawakami, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
0	0	0	0	0	0	0	0	0	1			54. "Schottky barrier heights of contact metals to p-ZnSe." J. Electronic Materials, vol 27, No. 6, June, p.772-775, 1998. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
19	24	27	28	29	31	39	40	42	43			55. "Ohmic Contacts for Compound Semiconductors" Critical Reviews in Solid State and Materials Sciences, vol. 23, No. 1, (CRC Press), p.1-60, 1998.. M. Murakami and Y. Koide
3	3	3	3	3	3	3	3	3	3			56. "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." Diamond Films and Technology, vol. 8, No. 6, p. 407-413, 1998.. Y. Koide, T. Toyama, and M. Murakami
0	0	0	0	0	0	0	0	0	0			57. "p-ZnSeおよびp-GaNワイドギャップ半導体のオーム性電極," 電子情報通信学会論文誌, Vol.J81-C-II，No. 10， p.805-809, 1998年 . 小出康夫, 村上正紀
0	0	0	0	0	0	0	0	0	0			58. "なぜショットキーバリアは形成されるのか," 応用物理学会誌、第67巻、第2号、p. 149-154, 1998年, 2月, 小出康夫，村上正紀
40	51	61	70	74	78	91	97	103	108		99 (8)	59. "Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN." J. Electronic Materials, vol. 28, No. 3, p. 341-346, 1999. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami
0	0	0	0	0	0	1	1	1	1			60. "Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors." Electronics and Communications in Japan Part II, vol. 82, No.1, p.43-47, (1999). Y. Koide, T.Kawakami, and M. Murakami
32	42	45	47	52	53	59	60	60	61			61. "Low-resistance TaTi Ohmic Contacts for p-type GaN." Appl. Phys. Letters, 74(2) p. 275-277, January, 1999. S. Suzuki, T. Kawakami, A. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami
6	8	8	8	8	9	10	13	13	13			62. "Formation and deterioration mechanisms of low-resistance TaTi Ohmic contacts for p-GaN." J. Appl. Phys. vol. 86, No. 9, p. 5079-5084, (1999). M. Suzuki, T. Arai, T. Kawakami, S. Kobayashi, Y. Taga, Y. Koide, and M. Murakami.
18	26	34	38	46	52	60	63	65	67			63. "Effects of NiO on electrical properties of NiAu-based Ohmic contacts for p-type GaN." Appl. Phys. Lett., 75(26), p.4145-4147, (1999).. T. Maeda, Y. Koide, and M. Murakami.
2	2	4	4	4	5	6	6	6	7			64. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Ni and Pd as a Base Metal." J. Appl. Phys. vol. 85, No. 11, June 1, p. 7792-7796, (1999).. A. Yamaguchi, T. Okada, Y. Iguchi, and T. Saito, H. Asamizu, Y. Koide, and M. Murakami
0	0	0	0	0	0	0	0	0	0			65. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." Inst. Phys. Conf. Ser. No. 162, p.793-798, (1999). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide, and M. Murakami
2	0	0	0	0	0	1	1	1	1			66. "Ohimic contact materials for p-ZnSe and p-GaN." Inst. Phys. Conf. Ser. No. 162, p. 787-792, 1999. Y. Koide, T. Kawakami, and M. Murakami.
1	1	2	2	2	3	4	6	6	6		00 (5)	67. "Effect of the first antimony layer on AuZn ohmic contacts to p-type InP." J. Vac. Sci. & Technol. B vol.18, No. 4 July/August, p.1957-1961, (2000).. A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami
0	0	0	0	0	0	0	0	0	0			68. "Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," J. Electron. Mater. vol.29, No. 7, p. 18-19, (2000). Y. Koide, T. Maeda, and M. Murakami
1	1	2	2	2	3	4	5	5	5			69. "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Appl. Surf. Sci. vol. 159-160, p. 174-178, 2000. H. Asamizu, A. Yamaguchi, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami
0	0	0	0	0	0	0	0	0	0			70. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN."Proceedings of International Workshop of Nitride Semiconductors, IPAP Conference Series 1, p. 821-824, 2000. Y. Koide, T. Arai, and M. Murakami.
0	0	0	0	0	0	0	0	0	0			71. "Surface damage of diamond field emitter." New Diamond and Frontier Carbon Technol., vol. 10, No. 1, p.53-53. 2000, T. Asari, M. Itahashi, Y. Koide, and M. Murakami.
3	5	9	13	14	16	19	20	22	22		01 (3)	72. "Development of Pt-based Ohmic contact materials for p-type GaN." J. Appl. Phys. vol. 89, No. 5, p. 2826-2831. 2001. T. Arai, H. Sueyoshi, M. Moriyama, Y. Koide, and M. Murakami.
1	1	1	1	1	2	3	3	4	4			73. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition II. Effects of p-type conduction.." Diamond and Related Materials, vol. 10, No. 12, p. 2118-2124, 2001. M. Itahashi, K. Umehara, Y. Koide, and M. Murakam
0	1	1	1	1	1	1	1	1	1			74. "Surface damage of diamond-based emitters." New Diamond Films and Frontier Carbon Technology, vol. 11, No. 4, p. 277-283, 2001 Y. Koide, T. Asari, M. Itahashi, and M. Murakami
0	1	1	1	1	1	1	1	1	2		02 (6)	75. "CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC." Materials Sci. Forum, vol. 389-393, p. 885-888. 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
1	5	7	15	23	26	31	31	31	31			76. "Effect of Pd or Pt addition to Ti/Al ohmic contact materials for n-type AlGaN." Appl. Phys. Letts. vol. 80, No. 16, p. 2934-2936. April 22, 2002. S. Murai, H. Masuda, Y. Koide, M. Murakami
1	5	7	10	14	15	22	24	26	28			77. "Effects of sp2/sp3 bonding ratios on field emission properties of diamond-like carbon." Diamond and Related Materials, vol.11, No. 7, p.1429-1435, 2002, Y. Umehara, S. Murai, Y. Koide, and M. Murakam
1	4	5	8	8	8	12	15	15	16			78. "Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-type 4H-SiC." Materials Transactions, vol. 43, No. 7. p. 1684-1688, 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
0	1	2	4	5	5	5	7	6	6			79. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. I. Effects of surface morphology." Diamond and Related Materials, 11, p. 1897-1994, 2002. T. Toyama, Y. Koide, and M. Murakami.
0	0	0	0	0	0	0	0	2	0			80. "Influence of oxygen on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 3rd Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Oct. 9-12, 2002, Hakone, Japan, p. 27-30, 2002. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
0	4	6	8	8	9	11	11	12	12		03 (7)	81. "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN." J. Appl. Phys., vol 92, No. 7, p. 3657-3661, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki
0	2	5	6	8	9	15	18	21	25			82. "Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC." Mater. Sci. & Eng. B, 98, No. 3, p. 286-293, 2003. R. Konishi, R. Yasukochi, O. Nakatsuka, M. Moriyama, Y. Koide, and M. Murakami.
0	0	0	0	0	0	0	0	0	0			83. "Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 10th International Symposium for Advanced Materials, March 10-13, 2003, Tsukuba, Japan, p 89-90, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
0	0	0	0	0	0	0	0	0	0			84. "Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." Proceedings of the 1st International National Institute for Materials Science Conference, March 17-19, 2003, Tsububa, Japan, p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
0	0	0	0	0	0	0	0	0	0			85. "Characteristics of depletion layer in diamond pn-junction." Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Augurst 21-24, 2003, Gangneung, Korea, p. 281-284, 2003. Y. Koide
0	0	0	0	0	0	2	2	2	2			86. "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." Physica Status Solidi (b) vol. 240, No. 2, p. 356-359, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
0	0	4	10	11	11	11	12	12	12			87. "Peculiarity of depletion region in diamond pn-junction." Jpn. J. Appl. Phys., vol. 42, No. 1, p. 6800-6803, 2003. Y. Koide
	0	3	3	3	4	4	4	4	5		04 (2)	88. "Analysis of electron statistics including compensation and deep-dopant effects for phosphous-doped n-type diamond." Jpn. J. Appl. Phys., vol. 43, No. 6A, p. 3307-3310, 2004, Y. Koide
	0	0	0	0	1	1	1	2	2		04 (2)	89. "Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor." Diamond Relat. Mat. vol. 13, No. 11-12, p. 1963-1966, 2004. Y. Koide..
		0	0	0	0	0	0	0	0		05 (13)	90. "Theoretical analysis of electron statistics for n-type diamond." Materials Science Forum, vol. 475-479, p. 1719-1724, 2005. Y. Koide.
		0	0	0	0	0	0	0	0			91. "Development of Electrode Materials for Semiconductor Devices." Mater. Sci. Forum, vol. 475-479, p. 1705-1714, 2005. Masanori Murakami, Y. Koide, Miki Moriyama, Susumu Tsukimoto.
		3	0	0	0	0	0	0	0			92. "Analysis for Electron Concentrations in N-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond," Jpn. J. Appl. Phys. vol. 44, No. 1A, p. 55-59, 2005. Y. Koide
		0	0	0	0	0	0	0	0			93. "Enhancement of donor ionization in phosphorus-doped n-diamond." Appl. Surf. Sci. 244, p.26-29 2005. Y. Koide
		0	2	4	4	4	5	5	5			94. “Admittance spectroscopy for phosphorus-doped n-type diamond epilayer,” Appl. Phys. Lett., 86, June 6, p. 2321051-2321053, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
		0	5	10	13	18	27	32	34			95. “Thermally-Stable visible-blind Diamond Photodiode Using WC Schottky Contact,” Appl. Phys. Lett., 87, July 4, p. 0221051-0221053, 2005. M. Y. Liao, Y. Koide, and J. Alvarez.
		0	0	1	1	2	3	3	3			96. "Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond," Appl. Phys. Lett. 87, Sept. 12, p. 1135071-1135073, 2005. J. Alvarez, M. Y. Liao, and Y. Koide.
		0	1	1	1	1	1	1	1			97. "Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor," Materials Transactions JIM, Vol.46, No.09 , p. 1965-1968, 2005. Y. Koide, M. Y. Liao, and J. Alvarez.
		0	0	0	0	0	0	0	0			98. "Special issue on narrow and wide-bandgap semiconductor materials - Preface." Materials Transactions JIM, vol. 46, No. 9, p. 1957-1957, 2005. Y. Koide and M. Murakami
		0	2	7	11	15	17	17	20			99. "Thermal Stability of Diamond Photodiodes Using WC as Schottky Contact." Jpn. J. Appl. Phys., vol. 44, No.11, p. 7832-7838, 2005, M. Y. Liao, J. Alvarez, and Y. Koide.
		0	0	1	2	3	3	3	4			100. “Tungsten carbide Schottky contact to diamond for thermally stable photodiode,” Diamond Relat. Mater., vol. 14, No. 11-12, p. 2003-2006, 2005, M. Y. Liao, Y. Koide, and J. Alvarez.
		0	0	0	0	0	0	0	0			101. "Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer," Diamond Relat. Mater. vol. 14, No. 11-12, p. 2011-2014, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
		0	0	0	1	1	2	2	2			102. "Simulation of Band Diagram for CVD Diamond Surface Conductivity," Jpn. J. Appl. Phys. Vol. 44, No. 12, 2005, p. 8378-8382. S. Kono and Y. Koide.
			0	2	2	3	4	5	6		06 (6)	103. "Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode," J. Vac. Sci. & Tech. B, 24(1), p.185-189, 2006. M. Y. Liao, Y. Koide, and J. Alvarez.
			0	0	1	2	6	8	11			104. "Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitxial diamond layer." Appl. Phys. Lett. vol. 88, p. 033504, 2006. M. Y. Liao, Y. Koide, and J. Alvarez.
			0	2	4	9	19	22	28			105. "High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film." Appl. Phys. Lett. vol. 89, 113509, 2006. M. Y. Liao and Y. Koide.
			0	1	2	5	12	14	16			106. "Thermally stable solar-blind diamond UV photodetector," Diamond Relat. Mater. vol.15, p. 1962-1966, 2006. Y. Koide, M. Y. Liao, and J. Alvarez.
			0	0	0	0	0	0	0			107. "Thermally Stable Solar-blind Diamond Deep-UV Detector." Application of Nanocrystalline Diamond nad Diamond Like Carbon Namterials, edited by Nihar Ranjan Ray, p. 167-172, 2006. Y. Koide.
			0	0	0	0	1	6	6			108. "Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy," Superlattices and Microstructures, Vol. 40, No. 4-6, October-December 2006, p. 343-349, J. Alvarez, F. Houze, J.P. Kleider, M.Y. Liao, and Y. Koide.
				0	0	0	0	0	0		07 (6)	109. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film," Materials Science Forum, vol. 546-549, p. 1759-1762, 2007. M. Liao and Y. Koide.
				0	2	4	15	18	20			110. "Electric Field Breakdown of Lateral Schottky Diodes of Diamond."Jpn. J. Appl. Phys. vol.46, No.9, p. L196-L198, 2007. T. Teraji, S. Koizumi, Y. Koide, and T. Ito.
				0	4	9	17	23	27			111. "Single Schottky-barrier photodiode with interdigitated finger geometry: application to diamond." Appl. Phys. Lett. vol. 90, p. 123507, 2007, M. Y. Liao, J. Alvarez, and Y. Koide.
				0	1	2	2	3	3			112. "Mechanism of photoconductivity gain for p-diamond Schottky photodiode." Diamond Relat. Mater. vol. 16, p. 949-952. 2007, Y. Koide and M. Y. Liao.
				0	0	1	2	4	4			113. "Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy," Diamond Relat. Mater. vol. 16, p. 1074-1077. 2007, J. Alvarez, F. Houze, J. P. Kleider, M.Y. Liao, Y. Koide.
				0	0	1	3	3	5			114. "Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity," Appl. Phys. Lett. vol. 91, 163510, 2007, M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide.
					0	0	0	1	1		08 (6)	115. "Metal/Diamond semiconductor interfaces and photodiode application." Appl. Surf. Sci. vol.254, p.6268-6272, 2008. Y. Koide.
					0	1	6	8	8			116. "Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond." Appl. Surf. Sci., vol.254, p.6273-6276, 2008. T. Teraji, S. Koizumi, Y. Koide, and T. Ito
					0	0	12	14	19			117. "Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors," Phys. Rev. B, vol. 78, p. 045112-1-045112-9, 2008. M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider.
					0	0	0	0	0			118. "Solar-Blind Photodetectors Based on Homoepitaxial Diamond Thin Films," Diamond and Related Materials Research, edited by S. Shimizu, Chapter 6, p. 1-21. (Nova Science Publisher, 2008), M. Y. Liao, J. Alvarez, and Y. Koide.
					0	0	2	2	2			119. "Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate," Diamond Relat. Mater., vol. 17, p. 1234-1243, 2008. M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
					0	0	4	4	8			120. "Ohmic contact for p-type diamond without postannealing." J. Appl. Phys., vol. 104, p. 016104-1 -016104-3, 2008. T. Teraji, S. Koizumi, and Y. Koide.
						1	4	4	7		09 (9)	121. "Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p⁺-Diamond Substrates." Diamond Relat. Mater., vol. 18, p. 296-298, 2009, M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
						0	46	104	158			122. "Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors," X. Fang, Y. Bando, M.Y. Liao, U-K. Gautam, C. Zhi, B. Dierre, B. Liu, T. Zhai, T. Sekiguchi, Y. Koide, and D. Golberg, Adv. Mater., vol. 21, p. 1-6, 2009.
						0	0	0	1			123. "Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces," Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Y. Koide, and Masataka Imura, Appl. Phys. Express, vol. 2, No. 6, p. 065501-1 - 065501-3, 2009.
						0	3	4	7			124. "Integration of (PbZr_0.52Ti_0.48O₃) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor," M. Y. Liao, M. Imura, X. Fang, K. Nakajima, G. Chen, and Y. Koide, Appl. Phys. Lett. 94, 242901 (2009).
						0	5	9	13			125. "Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment," T. Teraji, Y. Garino, Y. Koide, and T. Ito, J. Appl. Phys, 105, 126109, 2009.
						0	0	2	6			126. "High-temperature stability of Au/p-type diamond Schottky diode," T. Teraji, Y. Koide, and T. Ito, Phys. Stat. Sol. RRL 3, No. 6, p. 211-213 2009.
						0	2	5	6			127. "P-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, Phys. Stat. Sol. (a), 206, 2082, 2009.
						0	13	38	60			128. "High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors," X. Fang, S. Xiong, T. Zhai, Y. Bando, M.Y. Liao, U.K. Gautam, Y. Koide, X. Zhang, Y. Qian, and D. Golberg, Adv. Mater., 21, 1, 2009.
						0	0	0	0			129. "Schottky photodiode using submicron thick diamond epilayer for flame sensing," Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, F. Yoshifusa, Nano-Micro Lett., vol. 1, 1111101, 2009.
							1	3	5		10 (24)	130. "Improved ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond using CaF2 layer," M. Y. Liao, K. Nakajima, M. Imura, Y. Koide, Appl. Phys. Lett., vo. 96, 012910, 2010.
							2	5	6			131. "Light intensity dependence of photocurrent gain in single-crystal diamond detectors," M. Y. Liao, X. Wang, T. Teraji, S. Koizumi, Y. Koide, Phys. Rev. B, 81, 033304, 2010.
							0	2	3			132. "Piezoelectric PbZr_0.52Ti_0.48O₃thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties," M. Y. Liao, Y. Gotoh, H. Tsuji, K.Nakajima, M. Imura, and Y. Koide, J. Appl. Phys., 107, 024101, 2010.
							3	5	8			133. "Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M.Y. Liao, Y. Koide, H. Amano, J. Cryst. Growth, vol. 312, 368-372, 2010.
							7	28	55			134. "An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability," X. Fang, Y. Bando, M.Y. Liao, T. Zhai, U.K. Gautam, L. Li, Y. Koide, and D. Golberg, Adv. Func. Mater., vol. 20, No. 3, 500-508, 2010.
							1	1	2			135. "Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector," Y. Koide, M. Y. Liao, and M. Imura, Diamond Relat. Mater.,19, 205-207, 2010.
							1	2	2			136. "Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, Diamond Relat. Mater., vol. 19, 131-133, 2010.
							4	21	43			137. "Fabrication of High-Quality In₂Se₃ Nanowire Arrays toward High-Performance Visible-Light Photodetectors," T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J.N.A. Yao, Y. Bando, D. Golberg, ACS NANO, vol. 4, No. 3, 1596, 2010.
							0	0	1			138. "Fabrication and electrical properties of SrTiO₃/diamond junctions," Guang-chao Chen, M. Y. Liao, M. Imura, K. Nakajima, Y. Sugimoto, Y. Koide, Diamond Relat. Mater., 19, 319, 2010.
							0	3	5			139. "Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, J. Cryst. Growth, vol. 312, 1325-1328, 2010.
							1	14	24			140. "Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches," Y. B. Li, A. Paulsen, I. Yamada, Y. Koide, J. J. Delaunay, Nanotechnology, vol. 21, No. 29, 295502, 2010.
							5	32	58			141. "Centimeter-Long V₂O₅ Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties," T. Y. Zhai, H. M. Liu, H. Q. Li, X. S. Fang, M. Y. Liao, L. Li, H. S. Zhou, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 23, p.2547-2552, 2010.
							0	0	2			142. "Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, T. Ito, Physica Status Solidi A, vol. 207, p.1460-1463, 2010.
							1	8	12			143. "Morphology-tunable In₂Se₃ nanostructures with enhanced electrical and photoelectrical performances via sulfur doping," T. Y. Zhai, Y. Ma, L. Li, X. S. Fang, M. Y. Liao, Y. Koide, J. N. Yao, Y. Bando, D. Golberg, J. Mater. Chem., vol. 20, No. 32, p. 6630-6637, 2010.
							0	3	7			144. "Batch production of single-crystal diamond bridges and cantilevers for microelectromechanical systems," M. Y. Liao, C. Li, S. Hishita, Y. Koide, J. Micromech. & Micoreng., vol. 20, No. 8, 085002, 2010.
							1	1	53			145. "Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors," L. Li, P. C. Wu, X. S. Fang, T. Y. Zhai, L. Dai, M. Y. Liao, Y. Koide, H. Q. Wan, Y. Bando, D. Golberg, Adv. Maters, vol. 22, No. 29, p.3161, 2010.
							0	12	24			146. "Electrical Transport and High-Performance Photoconductivity in Individual ZrS₂ Nanobelts," L. Li, X. Fang, T. Zhai, M.Y. Liao, U.K. Gautam, X. C. Wu, Y. Koide, Y. Bando, and D. Golberg, Adv. Maters, vol. 22, No. 37, 41518, 2010.
							0	5	13			147. "Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire," C. Li, Y. Bando, M. Y. Liao, Y. Koide, D. Golberg, Appl. Phys. Lett. vol. 97, No. 16, 16112, 2010.
							0	12	19			148. "Single-Crystalline Sb₂Se₃ Nanowires for High-Performance Field Emitters and Photodetectors," T. Y. Zhai, M.F. Ye, L. Li, X. S. Fang, M. Y. Liao, Y. F. Li, Y. Koide, Y. Bando, D. Golberg, Adv. Maters, vol. 22, No. 40, p.4530-4533, 2010.
							0	2	7			149. "Extreme dielectric strength in boron doped homoepitaxial diamond," P. N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, S. Scharnholz, Appl. Phys. Lett., vol. 97, No. 22, 223501, 2010.
							0	0	0			150. "Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy," M. Imura, T. Ohnishi, M. Sumiya, M. Y. Liao, Y. Koide, H. Amano, M. Lippmaa, Phys. Status Solidi C, vol. 7, No. 10, p.2365-2367, 2010.
							0	6	14			151. "Efficient Assembly of Bridged β-Ga₂O₃ Nanowires for Solar-Blind Photodetection," Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J-J. Delaunay, Adv. Func. Mater. vol. 20, No. 22, p.3972-3978, 2010.
0							13	36		152. "Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts," L. Li, P. S. Lee, C. Yan, T. Y. Zhai, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, D. Golberg, Adv. Mater. vol. 22, No. 45, p. 5145-5149, 2010.
0							0	11		153. "Suspended single-crystal diamond nanowires for high-performance nanoelectromechanical switches." M. Y. Liao, S. Hishita, E.. Watanabe, S. Koizumi, Y. Koide, Adv. Mater. vol. 22, 5393, 2010.
	0						10		11 (11)	154. "Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts," Liang Li, Erwin Auer, Meiyong Liao, Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Alois Lugstein, Yasuo Koide, Yoshio Bando and Dmitri Golberg, Nanoscale, vol. 3, No.3, 1120-1126, 2011.
	0						3			155. "Demonstration of diamond field effect transistors by AlN/diamond heterostructure," M. Imura, R. Hayakawa, E. Watanabe, Y. Koide, and H. Amano, Physica Status Solidi-Rapid Research Letters, vol. 5, No.3, 125-127 2011.
	0						8			156. "High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator," L.W. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, Appl. Phys. Lett. 98, 9, 103502, 2011.
	0						0			157. "Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes," D. Inoue, A. Miura, T. Nomura, N. Ikeda, Y. Sugimoto, D. Tsuya, and Y. Koide, Appl. Phys. Lett., vol. 98, No. 9, 093113, 2011.
	0						2			158. "Sb₂O₃ nanobelt networks for excellent visible-light-range photodetectors," L. Li, Y. X. Zhang, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, and D. Golberg, Nanotechnology 22, No. 6, 165704, 2011.
	0						0			159. "WO₃ nanowires on carbon papers: electronic transport, improved ultraviolet-light photodetectors and excellent field emitters," L. Li, Y. Zhang, XS. Fang, TY. Zhai, MY. Liao MY, XL. Sun, Y. Koide, Y. Bando, D. Golberg, J. Mater. Chem. , vol. 21, No.18, p.6525-6530, 2011.
	0						0			160. ""Bridging wide bandgap nanowires for ultraviolet light detection," Yanbo Li, Miao Zhong, Takero Tokizono, Alexander Paulsen, Meiyong Liao, Yasuo Koide, Ichiro Yamada,Jean-Jacques Delaunay, Oxide-based Materials and Devices II, Proceedings of SPIE Volume: 7940, DOI: 10.1117/12.874142.
	0						4			161. "Carbon-Based Materials: Growth, Properties, MEMS/NEMS Technologies, and MEM/NEM Switches" M. Y. Liao and Y. Koide, Critical Reviews in Solid State and Materials Sciences, Vol. 36, Issue 2, 2011, p. 66 - 101, 2011.
	0						0			162. "Non-destructive detection of killer defects of diamond Schottky barrier diodes," T. Ohmagair, T. Teraji, Y. Koide, J. Appl. Phys. vol. 110, 56105, 2011.
	0						4			163. "High-temperature ultraviolet detection based on InGaN Schottky photodiodes," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 3, 031115, 2011.
	0						6			164. "Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 16, 161109, 2011.
							8		12 (13)	165. "Devlelopment of AlN/dimaond heterojunction field effect transistors," M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya,T. Nagatad, M. Liao, Y. Koide, J. Yamamoto, K. Bane, M. Iwayae, H. Amano, Diamond Relat. Mater., vol. 24, 206-209, 2012.
							1			166. "Nanoelectromechanical switch fabricated single crystal diamond: Experiments and modeling," Meiyong Liao, Zouwen Rong, Shunichi Hishita, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Diamond Relat. Mater., vol. 24, 69-73, 2012.
		22						167. "Low contact resistance metals for graphene based devices," E. Watanabe, A. Conwill, D. Tsuya, Y. Koide, Diamond Relat. Mater., vol. 24, 171-174, 2012.
		6						168. "Controlled formation of wrinkled diamond-like carbon (DLC) film on grooved poly(dimethylsiloxane) substrate, Original Research Article," S. Nagashima, T. Hasebe, T. Daiju, T. Horikoshi, M. Ochiai, S. Tanigawa, Y. Koide, A. Hotta, T. Suzuki, Diamond and Related Materials, Vol. 22, 48-51, 2012.
		1						169. “Amorphous silicon diamond based heterojunctions with high rectification ratio,” Original Research Article, Mohamed Boutchich, Jose Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, Meiyong Liao, Imura Masataka, Yasuo Koide, Jean-Paul Kleider, J. Non-Crystalline Solids, vol. 358, 2110 (2012).
		6						170. "Localized mid-gap-states limited reverse current of diamond Schottky diodes," T. Teraji, M. Y. Liao, and Y. Koide, J. Appl. Phys. 111, 104503 (2012).
		6						171. "Comprehesive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors, M. Y. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, Jpn. J. Appl. Phys., 51, 090115 (2012).
		3						172. "Chemical Vapor Deposition of ¹²C Isotopically Enriched Polycrystalline Diamond," T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Y. Liao, Y. Koide, J. Isoya, Jpn. J. Appl. Phys., vol. 51, No. 9, 090104 (2012)
		11					173. "Integration of high-dielectric constant Ta₂O₅ oxides on diamond for power devices," S. Cheng, L. Sang, M. Y. Liao, J. Liu, M. Imura, H. Li, and Y. Koide, Appl. Phys. Lett., vol. 101, 232907, 2012.
		0					174. "Nanophotonics based on semiconductor-photonic crystal/quantum dot and metal-/semiconductor-plasmonics," K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya, Y. Koide, Y. Watanabe, N. Ozaki, S. Ohkouchi, T. Nomura, D. Inoue, T. Matsui, A. Miura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No.2, 178 (2012).
		0					175. "Color filter based on surface plasmon resonance utilizing sub-micron periodic hole array in aluminum thin film," N. Ikeda, Y. Sugimoto, M. Ochiai, T. Daijyu, Y. Koide, D. Inoue, A. Miura, T. Nomura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No. 2, 251 (2012).
		0					176. "Ploarization filters for visible light consisting of subwavelength slits in an aluminum film," D. Inoue, T. Nomura, A. Miura, H. Fujikawa, K. Sato, N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, J. Lihgtwave Techol. vol. 30, 3463-3467 (2012).
		12					177. "Band offsets of Al₂O₃ and HfO₂ oxides deposited by atomic layer deposition technique on hydrogenated diamond," J. W. Liu, M. Y. Liao, M. Imura, Y. Koide, Appl. Phys. Lett. vol. 101, 252108 (2012).
											13 (13)	178. "Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO₂ as gate dielectric," J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide, Appl. Phys. Lett. vol. 102, 112910 (2013).
												179. "Interfacial chemical bonding state and band alignment of CaF₂/hydrogenterminated diamond heterojunction," J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide, J. Appl. Phys. vol. 113, 123706 (2013).
												180. "Effective use of source gas for diamond growth with isotopic enrichmentd," T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, Appl. Phys. Express. vol. 6, 055601 (2013).
												181. "Interfacial electronic band alignment of Ta₂O₅/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy," J. Liu, S. H. Cheng, M. Y. Liao a, M. Imura, and Y. Koide, Diamond Relat. Mater., vol. 38, 24-27 (2013).
												182. "Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along [1120] and [1100] Zone-Axes of AlN for Polarity Determination," M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda, Jpn. J. Appl. Phys vol. 52, 08JE15 (2013).
												183. "Temperature and light intensity dependence of photocurrent transport mechanisms in InGaN p-i-n homojunction solar cells," L. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, Jpn. J. Appl. Phys. vol. 52, 08JF04 (2013).
												184. "Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy," M Imura,S.Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. Yang, Y. Yamashita, H. Yoshikawa,Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, J. Appl. Phys. vol. 114, 033505 (2013).
												185. "Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures," L. Sang, J. Hu, R. Zou, Y. Koide, M. Y. Liao, Sci. Rep. vol. 3, 2368 (2013).
												186. "Interfacial band configuration and electrical properties of LaAlO₃/Al₂O₃/hydrogenated-diamond metal-oxide-semiconductor field effect transistors," J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide, J. Appl. Phys. vol. 114, 084108 (2013).
												187. "Normally-off HfO₂-gated diamond field effect transistors," J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 103, 092905 (2013).
												188. "Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy," M. Imura, S. Tsuda, T. Nagata1, H. Takeda1, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki and Y. Nanishi, Appl. Phys. Lett. vol. 103, 162110 (2013) .
												189. "High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts," R. Zou, Z. Zhang, J. Hu, L. Sang, Y. Koide, and M. Y. Liao, Nanotechnology, vol. 24 495701 (2013).
												190. "Multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure," L. Sang, M. Y. Liao, Q. Liang, M. Takeguchi, B. Dierre, B. Shen, T. Sekiguchi, Y. Koide, M. Sumiya, Adv. Mater. DOI: 10.1002/adma.201304335 (2013).
											14 (12)	191. "Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond," J. ?ermak1, Y. Koide, D. Takeuchi, and B. Rezek, J. Appl. Phys. vol. 115, 053105 (2014).
												192. "Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms," W. Tian, C. Zhang, T. Zhai, S.L. Li, X. Wang, Ji. Liu, X. Jie, D. Liu, M. Liao, Y. Koide, D. Golberg, and Y. Bando, Adv. Mater. vol. 26, 3088 (2014).
												193. “Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material,” J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide, J. Phys. D-Appl. Phys. Vol.47, 245102-1 (2014).
												194. “Behaviour of WC/p-diamond Schottky Diode Properties at Elevated Temperature,” A. Fiori, T. Teraji, Y. Koide, Phys. Status Solidi A , vol. 211, 2363-2366 (2014).
												195. "Doping and interface of homoepitaxial diamond for electroc applications," S. Yamazaki, E. Gheeraert, and Y. Koide, MRS Bulletiin, vol. 39, 499 (2014).
												196. "Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging," J Alvarez, M Boutchich, J P Kleider, T Teraji, and Y Koide, J. Phys. D: Appl. Phys., 47, 355102 (2014).
												197. “Nanostructured Wide-bandgap Semiconductors for Ultraviolet Detection,” M-Y. Liao, Y. Koide, S. Liwen, Austin Journal of Nanomedicine & Nanotechnology, vol. 2, 1029-1 (2014).
												198. “Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor,” J. Liu, M-Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide, Appl. Phys. Lett. Vol. 105, 082110-1 (2014).
												199. “Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric,” J. Liu, M-Y. Liao, M. Imura, A. Tanaka, H. Iwai, Y. Koide, Sci. Reports, vol. 4, 6395-1 (2014).
												200. “Diamond Schottky diodes with ideality factors close to 1,” A. Fiori, T. Teraji, Y. Koide, Appl. Phys. Lett. Vol. 105, 133515-1 (2014).
												201. “Energy dissipation in micron- and submicron-thick single crystal diamond,” M-Y. Liao, M Toda, S. Liwen, S. Hishita, S Tanaka, Y. Koide, Appl. Phys. Lett. Vol. 105, 251904-1 (2014).
												202. "Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond," J. Liu, M-Y.Liao, M. Imura, H. Oosato, E.Watanabe, Y. Koide, Dia. Relat. Mater., online publication, (2014).

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