論文 (2002 - 現在 : ２２５編 )

  1. "Peculiarity of depletion region in diamond pn-junction." Jpn. J. Appl. Phys. Part 1, vol. 42, No. 1, p. 6800-6803, 2003. Y. Koide.
  2. "Characteristics of depletion layer in diamond pn-junction." Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Augurst 21-24, 2003, Gangneung, Korea, p. 281-284, 2003.Y. Koide.
  3. "Analysis of electron statistics including compensation and deep-dopant effects for phosphous-doped n-type diamond." Jpn. J. Appl. Phys. Part 1, vol. 43, No. 6A, p. 3307-3310, 2004.Y. Koide.
  4. "Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor." Diamond Relat. Mat. vol. 13, No. 11-12, p. 1963-1966, 2004. Y. Koide.
  5. "Theoretical analysis of electron statistics for n-type diamond." Material Science Forum, vol. 475-479, p. 1719-1724, 2005.  Y. Koide
  6. "Analysis for Electron Concentrations in n-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond," Jpn. J. Appl. Phys. Part 1, vol.44, No. 1A, p. 55-59, 2005. Y. Koide.
  7. "Enhancement of donor ionization in phosphorus-doped n-diamond." Appl. Surf. Sci. 244, p.26-29 (2005). Y. Koide.
  8. “Admittance spectroscopy for phosphorus-doped n-type diamond epilayer,” Appl. Phys. Lett., 86, June 6, p. 2321051-2321053, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  9. 1st Thermally-Stable Diamond SPD DUV-Sensor: “Thermally-Stable visible-blind Diamond Photodiode Using WC Schottky Contact,” Appl. Phys. Lett., 87, July 4, p. 0221051-0221053, 2005. M. Y. Liao, Y. Koide, and J. Alvarez.
  10. "Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond," Appl. Phys. Lett. 87, Sept. 12, p. 1135071-1135073, 2005. J. Alvarez, M. Y. Liao, and Y. Koide.
  11. "Development of Thermally Stable, Solar-Blind Deep-Ultraviolet Diamond Photosensor," Materials Transactions JIM, Vol.46, No.09 , p. 1965-1968, 2005. Y. Koide, M. Y. Liao, and J. Alvarez.
  12. "Special issue on narrow and wide-bandgap semiconductor materials - Preface." Materials Transactions JIM, vol. 46, No. 9, p. 1957-1957, 2005. Y. Koide and M. Murakami.
  13. "Thermal Stability of Diamond Photodiodes Using WC as Schottky Contact." Jpn. J. Appl. Phys., vol. 44, No.11, p. 7832-7838, 2005, M. Y. Liao, J. Alvarez, and Y. Koide.
  14. “Tungsten carbide Schottky contact to diamond for thermally stable photodiode,” Diamond Relat. Mater., vol. 14, No. 11-12, p. 2003-2006, 2005, M. Y. Liao, Y. Koide, and J. Alvarez.
  15. "Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer," Diamond Relat. Mater. vol. 14, No. 11-12, p. 2011-2014, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  16. "Simulation of Band Diagram for CVD Diamond Surface Conductivity," Jpn. J. Appl. Phys. Vol. 44, No. 12, 2005, p. 8378-8382. S. Kono and Y. Koide.
  17. "Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode," J. Vac. Sci. & Tech. B, 24(1), p.185-189, 2006. M. Y. Liao, Y. Koide, and J. Alvarez.  
  18. "Photovoltaic Schottky ultraviolet detector fabricated on boron-doped homoepitxial diamond layer." Appl. Phys. Lett. vol. 88, p. 0335041-0335043, 2006, M. Y. Liao, Y. Koide, and J. Alvarez.
  19. "High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film." Appl. Phys. Lett. 89, 113509, 2006. M. Y. Liao and Y. Koide.
  20. "Thermally stable solar-blind diamond UV photodetector," Diamond Relat. Mater. vol.15, p. 1962-1966, 2006. Y. Koide, M. Y. Liao, and J. Alvarez.
  21. "Thermally Stable Solar-blind Diamond Deep-UV Detector." Application of Nanocrystalline Diamond and Diamond Like Carbon Namterials, edited by Nihar Ranjan Ray, p. 167-172, 2006. Y. Koide.
  22. "Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy," Superlattices and Microstructures, Vol. 40, No. 4-6, October-December 2006, p. 343-349, J. Alvarez, F. Houze, J.P. Kleider, M.Y. Liao, and Y. Koide.
  23. "Visible-Blind Metal-Semiconductor-Metal Structured Deep-Ultraviolet Photodetectors Using Single-Crystalline Diamond Thin Film," Materials Science Forum, vol. 546-549, p. 1759-1762, 2007. M. Liao and Y. Koide.
  24. "Electric Field Breakdown of Lateral Schottky Diodes of Diamond." Jpn. J. Appl. Phys. vol.46, No.9, p. L196-L198, 2007. T. Teraji, S. Koizumi, Y. Koide, and T. Ito.
  25. "Single Schottky-barrier photodiode with interdigitated finger geometry: application to diamond." Appl. Phys. Lett. vol. 90, p. 123507, 2007, M. Y. Liao, J. Alvarez, and Y. Koide.
  26. "Mechanism of photoconductivity gain for p-diamond Schottky photodiode." Diamond Relat. Mater. vol. 16, p. 949-952. 2007, Y. Koide and M. Y. Liao.
  27. "Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy," Diamond Relat. Mater. vol. 16, p. 1074-1077, 2007, J. Alvarez,  F. Houze, J. P. Kleider, M.Y. Liao, Y. Koide.
  28. "Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity," Appl. Phys. Lett. vol. 91, 163510, 2007, M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide.
  29. Review; "Metal/Diamond semiconductor interfaces and photodiode application." Appl. Surf. Sci. vol.254, p.6268-6272, 2008. Y. Koide.
  30. "Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond." Appl. Surf. Sci., vol.254, p.6273-6276, 2008. T. Teraji, S. Koizumi, Y. Koide, and T. Ito
  31. DUV Photo-sensing Mechanism; "Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors," Phys. Rev. B, vol. 78, p. 045112-1-045112-9, 2008. M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider.
  32. "Solar-Blind Photodetectors Based on Homoepitaxial Diamond Thin Films," Diamond and Related Materials Research, edited by S. Shimizu, Chapter 6, p. 1-21. (Nova Science Publisher, 2008), M. Y. Liao, J. Alvarez, and Y. Koide.
  33. "Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate," Diamond Relat. Mater., vol. 17, p. 1234-1243, 2008. M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
  34. "Ohmic contact for p-type diamond without postannealing." J. Appl. Phys., vol. 104, p. 016104-1 -016104-3, 2008. T. Teraji, S. Koizumi, and Y. Koide.
  35. "Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates." Diamond Relat. Mater., vol. 18, p. 296-298, 2009, M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
  36. "Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors," X. Fang, Y. Bando, M.Y. Liao, U-K. Gautam, C. Zhi, B. Dierre, B. Liu, T. Zhai, T. Sekiguchi, Y. Koide, and D. Golberg, Adv. Mater., vol. 21, p. 1-6, 2009.
  37. "Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces," Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Y. Koide, and Masataka Imura, Appl. Phys. Express, vol. 2, No. 6, p. 065501-1 - 065501-3, 2009.
  38. 1st Ferrodielectic/Diamond; "Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor," M. Y. Liao, M. Imura, X. Fang, K. Nakajima, G. Chen, and Y. Koide, Appl. Phys. Lett. 94, 242901 2009.
  39. "Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment," T. Teraji, Y. Garino, Y. Koide, and T. Ito, J. Appl. Phys, 105, 126109, 2009.
  40. "High-temperature stability of Au/p-type diamond Schottky diode," T. Teraji, Y. Koide, and T. Ito, Phys. Stat. Sol. RRL 3, No. 6, p. 211?213 2009.
  41. "P-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, Phys. Stat. Sol. (a), 206, 2082, 2009.
  42. "High-Performance Blue/Ultraviolet-Light-Sensitive ZnSe-Nanobelt Photodetectors," X. Fang, S. Xiong, T. Zhai, Y. Bando, M.Y. Liao, U.K. Gautam, Y. Koide, X. Zhang, Y. Qian, and D. Golberg, Adv. Mater., 21, 1, 2009.
  43. Frame sensing;"Schottky photodiode using submicron thick diamond epilayer for flame sensing," Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, F. Yoshifusa, Nano-Micro Lett., vol. 1, 1111101, 2009.
  44. "Improved ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin film on single crystal diamond using CaF2 layer," M. Y. Liao, K. Nakajima, M. Imura, Y. Koide, Appl. Phys. Lett., vol. 96, 012910, 2010.
  45. "Light intensity dependence of photocurrent gain in single-crystal diamond detectors," M. Y. Liao, X. Wang, T. Teraji, S. Koizumi, Y. Koide, Phys. Rev. B, 81, 033304, 2010.
  46. "Piezoelectric PbZr0.52Ti0.48O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties," M. Y. Liao, Y. Gotoh, H. Tsuji, K.Nakajima, M. Imura, and Y. Koide, J. Appl. Phys., 107, 024101, 2010.
  47. "Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M.Y. Liao, Y. Koide, H. Amano, J. Cryst. Growth, vol. 312, 368-372, 2010.
  48. "An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet-Light Sensors with Enhanced Photocurrent and Stability," X. Fang, Y. Bando, M.Y. Liao, T. Zhai, U.K. Gautam, L. Li, Y. Koide, and D. Golberg, Adv. Func. Mater., vol. 20, No. 3, 500-508, 2010.
  49. "Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector," Y. Koide, M. Y. Liao, and M. Imura, Diamond Relat. Mater.,19, 205-207, 2010.
  50. "Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, Diamond Relat. Mater., vol. 19, 131-133, 2010.
  51. "Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors," T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J.N.A. Yao, Y. Bando, D. Golberg, ACS NANO, vol. 4, No. 3, 1596, 2010.
  52. "Fabrication and electrical properties of SrTiO3/diamond junctions," Guang-chao Chen, M. Y. Liao, M. Imura, K. Nakajima, Y. Sugimoto, Y. Koide, Diamond Relat. Mater., 19, 319, 2010.
  53. "Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, J. Cryst. Growth, vol. 312, 1325-1328, 2010.
  54. "Bascule nanobridges self-assembled with ZnO nanowires as double Schottky barrier UV switches," Y. B. Li, A. Paulsen, I. Yamada, Y. Koide, J. J. Delaunay, Nanotechnology, vol. 21, No. 29, 295502, 2010.
  55. "Centimeter-Long V2O5 Nanowires: From Synthesis to Field-Emission, Electrochemical, Electrical Transport, and Photoconductive Properties," T. Y. Zhai, H. M. Liu, H. Q. Li, X. S. Fang, M. Y. Liao, L. Li, H. S. Zhou, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 23, p.2547-2552, 2010.
  56. "Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, T. Ito, Physica Status Solidi A, vol. 207, p.1460-1463, 2010.
  57. "Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping," T. Y. Zhai, Y. Ma, L. Li, X. S. Fang, M. Y. Liao, Y. Koide, J. N. Yao, Y. Bando, D. Golberg, J. Mater. Chem., vol. 20, No. 32, p. 6630-6637, 2010.
  58. "Batch production of single-crystal diamond bridges and cantilevers for microelectromechanical systems," M. Y. Liao, C. Li, S. Hishita, Y. Koide, J. Micromech. & Micoreng., vol. 20, No. 8, 085002, 2010.
  59. "Single-Crystalline CdS Nanobelts for Excellent Field-Emitters and Ultrahigh Quantum-Efficiency Photodetectors," L. Li, P. C. Wu, X. S. Fang, T. Y. Zhai, L. Dai, M. Y. Liao, Y. Koide, H. Q. Wan, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 29, p.3161, 2010.
  60. "Electrical Transport and High-Performance Photoconductivity in Individual ZrS2 Nanobelts," L. Li, X. Fang, T. Zhai, M.Y. Liao, U.K. Gautam, X. C. Wu, Y. Koide, Y. Bando, and D. Golberg, Adv. Mater., vol. 22, No. 37, 41518, 2010.
  61. "Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire," C. Li, Y. Bando, M. Y. Liao, Y. Koide, D. Golberg, Appl. Phys. Lett. vol. 97, No. 16, 16112, 2010.
  62. "Single-Crystalline Sb2Se3 Nanowires for High-Performance Field Emitters and Photodetectors," T. Y. Zhai, M.F. Ye, L. Li, X. S. Fang, M. Y. Liao, Y. F. Li, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 40, p.4530-4533, 2010.
  63. "Extreme dielectric strength in boron doped homoepitaxial diamond," P. N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, S. Scharnholz, Appl. Phys. Lett., vol. 97, No. 22, 223501, 2010.
  64. "Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy," M. Imura, T. Ohnishi, M. Sumiya, M. Y. Liao, Y. Koide, H. Amano, M. Lippmaa, Phys. Status Solidi C, vol. 7, No. 10, p.2365-2367, 2010.
  65. "Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection," Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J-J. Delaunay, Adv. Func. Mater. vol. 20, No. 22, p.3972-3978, 2010.
  66. "Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts," L. Li, P. S. Lee, C. Yan, T. Y. Zhai, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, D. Golberg, Adv. Mater., vol. 22, No. 45, p. 5145-5149, 2010.
  67. 1st Single-crystalline Diamond MEMS switch; "Suspended single-crystal diamond nanowires for high-performance nanoelectromechanical switches." M. Y. Liao, S. Hishita, E.. Watanabe, S. Koizumi, Y. Koide, Adv. Mater. vol. 22, 5393, 2010.
  68. "Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts," Liang Li, Erwin Auer, Meiyong Liao, Xiaosheng Fang, Tianyou Zhai, Ujjal K. Gautam, Alois Lugstein, Yasuo Koide, Yoshio Bando and Dmitri Golberg, Nanoscale, vol. 3, No.3, 1120-1126, 2011.
  69. 1st AlN/Diamond FET: "Demonstration of diamond field effect transistors by AlN/diamond heterostructure," M. Imura, R. Hayakawa, E. Watanabe, Y. Koide, and H. Amano, Physica Status Solidi-Rapid Research Letters, vol. 5, No.3, 125-127 2011.
  70. "High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator," L.W. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, Appl. Phys. Lett. 98, 9, 103502, 2011.
  71. "Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes," D. Inoue, A. Miura, T. Nomura, N. Ikeda, Y. Sugimoto, D. Tsuya, and Y. Koide, Appl. Phys. Lett., vol. 98, No. 9, 093113, 2011.
  72. "Sb2O3 nanobelt networks for excellent visible-light-range photodetectors," L. Li, Y. X. Zhang, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando, and D. Golberg, Nanotechnology 22, No. 6, 165704, 2011.
  73. "WO3 nanowires on carbon papers: electronic transport, improved ultraviolet-light photodetectors and excellent field emitters," L. Li, Y. Zhang, XS. Fang, TY. Zhai, MY. Liao MY, XL. Sun, Y. Koide, Y. Bando, D. Golberg, J. Mater. Chem. , vol. 21, No.18, p.6525-6530, 2011.  
  74. "Bridging wide bandgap nanowires for ultraviolet light detection," Yanbo Li, Miao Zhong, Takero Tokizono, Alexander Paulsen, Meiyong Liao, Yasuo Koide, Ichiro Yamada,Jean-Jacques Delaunay, Oxide-based Materials and Devices II, Proceedings of SPIE Volume: 7940, DOI: 10.1117/12.874142.
  75. "Carbon-Based Materials: Growth, Properties, MEMS/NEMS Technologies, and MEM/NEM Switches"  M. Y. Liao and Y. Koide, Critical Reviews in Solid State and Materials Sciences, Volume 36, Issue 2, 2011, p. 66 - 101, 2011.
  76. "Non-destructive detection of killer defects of diamond Schottky barrier diodes," T. Ohmagair, T. Teraji, Y. Koide, J. Appl. Phys. vol. 110, 56105, 2011.
  77. "High-temperature ultraviolet detection based on InGaN Schottky photodiodes," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 3, 031115, 2011.
  78. "Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer," Liwen Sang, Meiyong Liao, Naoki Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., vol. 99, 16, 161109, 2011.
  79. "Devlelopment of AlN/dimaond heterojunction field effect transistors," M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagatad, M. Liao, Y. Koide, J. Yamamoto, K. Bane, M. Iwaya, H. Amano, Diamond Relat. Mater., vol. 24, 206-209, 2012.
  80. "Nanoelectromechanical switch fabricated single crystal diamond: Experiments and modeling," Meiyong Liao, Zouwen Rong, Shunichi Hishita, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Diamond Relat. Mater., vol. 24, 69-73, 2012.
  81. "Low contact resistance metals for graphene based devices," E. Watanabe, A. Conwill, D. Tsuya, Y. Koide, Diamond Relat. Mater., vol. 24, 171-174, 2012.
  82. "Controlled formation of wrinkled diamond-like carbon (DLC) film on grooved poly(dimethylsiloxane) substrate," Original Research Article," S. Nagashima, T. Hasebe, T. Daiju, T. Horikoshi, M. Ochiai, S. Tanigawa, Y. Koide, A. Hotta, T. Suzuki, Diamond and Related Materials, vol. 22, 48-51, 2012.
  83. "Amorphous silicon diamnd based heterojunctions with high rectification ratio,” M. Boutchich, J. Alvarez, D. Diouf, Pe-R. Cabarrocas, M.Y. Liao, M. Imura, Y. Koide, J-P. Kleider, J. Non-Crystalline Solids, vol. 358, 2110 (2012).
  84. "Localized mid-gap-states limited reverse current of diamond Schottky diodes," T. Teraji, M. Y. Liao, and  Y. Koide, J. Appl. Phys. vol. 111, 104503 (2012).
  85. "Comprehesive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors, M. Y. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and Y. Koide, Jpn. J. Appl. Phys., 51, 090115 (2012).
  86. "Chemical Vapor Deposition of 12C Isotopically Enriched Polycrystalline Diamond," T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Y. Liao, Y. Koide, J. Isoya, Jpn. J. Appl. Phys., vol. 51, No. 9, 090104 (2012)
  87. High-k/Diamond Impact; "Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices," S. Cheng, L. Sang, M. Y. Liao, J. Liu, M. Imura, H. Li, and Y. Koide, Appl. Phys. Lett., vol. 101, 232907, 2012.
  88. "Nanophotonics based on semiconductor-photonic crystal/quantum dot and metal-/semiconductor-plasmonics," K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya, Y. Koide, Y. Watanabe, N. Ozaki, S. Ohkouchi, T. Nomura, D. Inoue, T. Matsui, A. Miura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No.2, 178 (2012).
  89. "Color filter based on surface plasmon resonance utilizing sub-micron periodic hole array in aluminum thin film," N. Ikeda, Y. Sugimoto, M. Ochiai, T. Daijyu, Y. Koide, D. Inoue, A. Miura, T. Nomura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No. 2, 251 (2012).
  90. "InGaN photodiodes using CaF2 insulator for high‐temperature UV detection," L-W. Sang, M-Y. Liao, Y. Koide, and M. Sumiya, Physica Status Solidi C, vol. 9, 953-956, (2012).
  91. "Ploarization filters for visible light consisting of subwavelength slits in an aluminum film," D. Inoue, T. Nomura, A. Miura, H. Fujikawa, K. Sato, N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, J. Lihgtwave Techol. vol. 30, 3463-3467 (2012).
  92. "Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond," J. W. Liu, M. Y. Liao, M. Imura, Y. Koide, Appl. Phys. Lett. vol. 101, 252108 (2012).
  93. Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide, Appl. Phys. Lett. vol. 102, 112910 (2013).
  94. “Interfacial chemical bonding state and band alignment of CaF2 hydrogenterminated diamond heterojunction,” J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide, J. Appl. Phys. vol. 113, 123706 (2013).
  95. “Effective use of source gas for diamond growth with isotopic enrichment,” T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, Appl. Phys. Express. vol. 6, 055601 (2013).
  96. "Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy, J. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 38, 24-27 (2013).
  97. “Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along [1120] and [1100] Zone-Axes of AlN for Polarity Determination,” M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda, Jpn. J. Appl. Phys vol. 52, 08JE15 (2013).
  98. “Temperature and light intensity dependence of photocurrent transport mechanisms in InGaN p-i-n homojunction solar cells,” L. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys. vol. 52, 08JF04 (2013).
  99. “Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy,” M Imura, S.Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, J. Appl. Phys. vol. 114, 033505 (2013).
  100. “Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures,” L. Sang, J. Hu, R. Zou, Y. Koide, M. Y. Liao, Sci. Rep. vol. 3, 2368 (2013).
  101. High-k Gate Oxide Diamond FET; “Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide, J. Appl. Phys. vol. 114, 084108 (2013).
  102. High-k Normally-off Diamond FET; “Normally-off HfO2-gated diamond field effect transistors,”  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 103, 092905 (2013).
  103. “Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy,” M. Imura, S. Tsuda, T. Nagata1, H. Takeda1, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi, Appl. Phys. Lett. vol. 103, 162110 (2013).
  104. “High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts,” R. Zou, Z. Zhang, J. Hu, L. Sang, Y. Koide, and M. Y. Liao, Nanotechnology, vol. 24, 495701 (2013).
  105. “A Multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure,” L. Sang, M. Y. Liao, Q. Liang, M. Takeguchi, B. Dierre, B. Shen, T. Sekiguchi, Y. Koide, M. Sumiya, Adv. Mater., vol. 26, 1414 (2014).
  106. "Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond," J. ?ermak1, Y. Koide, D. Takeuchi, and B. Rezek, J. Appl. Phys. vol. 115, 053105 (2014).
  107. “Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms,” T. Wei, C. Zhang, T. Zhai, S. Li, X. Wang, J. Liu, X. Jie, D. Liu, L. Meiyong, Y. Koide, D. Golberg, Y. Bando,  Adv. Mater., vol. 26, 3088 (2014).
  108. “Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material,” J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide, J. Phys. D: Appl. Phys. vol. 47, 245102-1 (2014).
  109. “Thermal stabilization and deterioration of the WC/p-type diamond (100) Schottky-barrier interface,” A. Fiori, T. Teraji, Y. Koide, Phys. Status Solidi A , vol. 211, 2363-2366 (2014).
  110. "Schottky barrier height and thermal stability of p-diamond (100) Schottky interfaces," T. Teraji, Y. Koide, T. Ito, Thin Solid Films, vol. 557, 30 April, 241-248 (2014).
  111. "Doping and interface of homoepitaxial diamond for electroc applications," S. Yamazaki, E. Gheeraert, and Y. Koide, MRS Bulletiin, vol. 39, 499 (2014).
  112. "Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging," J Alvarez, M Boutchich, J P Kleider, T Teraji, and Y Koide, J. Phys. D: Appl. Phys., 47, 355102 (2014).
  113. “Nanostructured Wide-bandgap Semiconductors for Ultraviolet Detection,” M-Y. Liao, Y. Koide, S. Liwen, Austin Journal of Nanomedicine & Nanotechnology, vol. 2, 1029-1 (2014).
  114. Diamond Inverter Circuit; “Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor,” J. Liu, M-Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide, Appl. Phys. Lett. vol. 105, 082110-1 (2014).
  115. Summary for High-k Oxide Diamond FETs; “Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric,” J. Liu, M-Y. Liao, M. Imura, A. Tanaka, H. Iwai, Y. Koide,  Sci. Reports, vol. 4, 6395-1 (2014).
  116. “Diamond Schottky diodes with ideality factors close to 1,” A. Fiori, T. Teraji, Y. Koide, Appl. Phys. Lett. vol. 105, 133515-1 (2014).
  117. “Energy dissipation in micron- and submicron-thick single crystal diamond,” M-Y. Liao, M Toda, S. Liwen, S. Hishita, S Tanaka, Y. Koide,  Appl. Phys. Lett. vol. 105, 251904-1 (2014).
  118. "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, M. Imura, J. Liu, and M. Liao, 2014 9th European Microwave Integrated Circuits Conference (EuMIC), October 2014, DOI: 10.1109/EuMIC.2014.6997814
  119. "Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond," J. Liu, M-Y. Liao, M. Imura, H. Oosato, E.Watanabe, Y. Koide, Dia. Relat. Mater., vol. 54, 55-58, (2015).
  120. "InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties," L-W. Sang, M-W. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys 117, 105706 (2015); doi: 10.1063/1.4914908
  121. “Homoepitaxial diamond film growth: high purity high crystalline quality isotopic enrichment and single color center formation,” T. Teraji, T. Yamamoto, K. Watanabe, Y. Koide, J. Isoya, S. Onoda, T. Ohshima, L. J. Rogers, F. Jelezko, P. Neumann, J. Wrachtrup, S. Koizumi, Phys. Status Solidi A-Appl. Mat. 212[11] 2365-2384 (2015),  DOI:10.1002/pssa.201532449
  122. "Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures," M-Y. Liao, J-W. Liu, L-W. Sang, D. Coathup, J-L Li, J. M. Imura, Y. Koide, H-T. Ye, Appl. Phys. Lett., 106, 083506 (2015).
  123. D/E-modes control of MOSFETs: "Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide, J. Appl. Phys. vol. 118, 115704 (2015); doi: 10.1063/1.4930294
  124. "Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer," R. G. Banal, M. Imura, and Y. Koide, AIP Advances 5, 097143 (2015); doi: 10.1063/1.4931159
  125. "Optical Filters Based on Nano-Sized Hole and Slit Patterns in Aluminum Films," D. INOUE, A. MIURA, T. NOMURA, H. FUJIKAWA, K. SATO, N. IKEDA, D. TSUYA, Y. SUGIMOTO, Y. KOIDE, IEICE TRANSACTIONS on Electronics, vol. E99-C, No.3,  p.358-364, (2016).
  126. "P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas,"K. Zhang, M.Sumiya, M-Y. Liao, Y.Koide, L-W. Sang, Scientific Reports, 6, 23683 (2016), doi:10.1038/srep23683.
  127. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction," Tao Ji , Qian Liu , Rujia Zou , Yangang Sun , Kaibing Xu , Liwen Sang , Meiyong Liao , Yasuo Koide, Li Yu , and Junqing Hu, Adv. Func. Materials, vol. 26, 1400 (2016). DOI: 10.1002/adfm.201504464.
  128. "Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond," Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, and Haitao Ye, Appl. Phys. Lett., 108, 012105 (2016); doi: 10.1063/1.4939650
  129. "High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, J. Appl. Phys., 120, 124504 (2016); doi: 10.1063/1.4962851.
  130. "Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors," Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide, J. Appl. Phys., 120, 115307 (2016); doi: 10.1063/1.4962854.
  131. Nanoscale multigate MOSFETs: “Design and fabrication of highperformance diamond triple-gate field-effect transistors,” Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, & Yasuo Koide, Sci. Reprots, 6, 34757 (2016).
  132. “Self-assembling diacetylene molecules on atomically flat insulators,” Elisseos Verveniotis, Yuji Okawa, Marina V. Makarova, Yasuo Koide, Jiangwei Liu, B?etislav ?mid3, Kenji Watanabe, Takashi Taniguchi, Katsuyoshi Komatsu, Takeo Minari, Xuying Liu, Christian Joachim1, and Masakazu Aono, Phys. Chem. Chem. Phys. 2016, DOI: 10.1039/C6CP06749B.
  133. “Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric,” K. Zhang, M.W. Liao, M. Imura, T. Nabatame, A. Ohi, M. Sumiya, Y. Koide, S. Liwen : Appl. Phys. Express 9[12] 121002 (2016), DOI:10.7567/APEX.9.121002.
  134. “Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy” K. Zhang, M.W. Liao M. Sumiya, Y.Koide, L. Sang. J. Appl. Phys., 120 [18] (2016) 185305-1 DOI:10.1063/1.4967394
  135. "Improvement of the quality factor of single crystal diamond mechanical resonators," M.W. Liao, M. Toda, S. Liwen, T. Teraji, M. Imura, and Y. Koide, Jpn. J. Appl. Phys., 56, 024101 (2017). DOI: 10.7567/JJAP.56.024101.
  136. "Displacement current of Au/p-diamond Schottky contacts," Toshichika Aokia, Tokuyuki Terajib, Yasuo Koide, Kenji Shiojima, Mater. Sci. Semicond. Process., 70, 207 (2017). DOI: 10.1016/j.mssp.2016.12.012
  137. “Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel,” M. Imura, R. Banal, L. Meiyong, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide : J. Appl. Phys. 121, 025702-1, (2017). DOI:10.1063/1.4972979
  138. "Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate," R. G. Banal, M. Imura and Y. Koide, INTECH Open Science and Reserch, Chapter 3, pp. 43-58. (2017). DOI: 10.5772/66177
  139. “Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.” Ryan G. Banal, M. Imura, D. Tsuya, H. Iwai, Y. Koide. Physica Status Solidi (a). 214 [2] (2017) 1600727. 10.1002/pssa.201600727
  140. "Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors," J.W. Liu and Y. Koide, Biosensors and Biodetection, Part of the Methods in Molecular Biology book series (MIMB, volume 1572) pp 217-232. DOI: 10.1007/978-1-4939-6911-1_15
  141. "Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator," J. W. Liu, H. Oosato, M. Y. Liao, and Y. Koide, Appl. Phys. Lett., 110, 203502 (2017). DOI: 10.1063/1.4983091
  142. Diamond E/D-logic circuit : "Logic Circuits with Hydrogenated Diamond Field-Effect Transistors," J.W. Liu, H. Ohsato, M..W. Liao, M. Imura, E. Watanabe, and Y. Koide, IEEE Electron Device Lett., vol. 38, No. 7, 922-934 (2017). DOI: 10.1109/LED.2017.2702744
  143. "Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters," J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, and Y. Koide, J. Appl. Phys., 121, 224502 (2017). DOI: 10.1063/1.4985066
  144. "Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy”, M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A.Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T.Araki, Y.Nanishi. J. Appl. Phys., 121 095703-1 (2017). DOI:10.1063/1.4977201
  145. "Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes," Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano, Appl. Phys. Lett., 111, 122102 (2017). DOI: 10.1063/1.4994627
  146. "Mechanism of reverse current increase of vertical-type diamond Schottky diodes," T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, Y. Koide. J. Appl. Phys., 122, 135304-1 (2017). DOI: 10.1063/1.4994570
  147. "Magnetic Control of MagnetoElectrochemical Cell and Electric Double Layer Transistor," Takashi Tsuchiya, Masataka Imura, Yasuo Koide, and Kazuya Terabe, Sci. Reprots, 7, 10534 (2016). DOI: 10.1038/s41598-017-11114-2
  148. "Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001)," Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi, and Y. Koide, Jpn. J. Appl. Phys., 56, 128004 (2017). DOI: 10.7567/JJAP.56.128004
  149. Finding Ga2O3 IL; "Electron microscopy studies of the intermediate layers at the SiO2/GaN interface," Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kiyokazu Nakagawa, and Y. Koide, Jpn. J. Appl. Phys., 56, 110312 (2017). DOI: 10.7567/JJAP.56.110312
  150. "Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance," Bing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Appl. Phys. Express, 10, 051001-1 (2017). DOI: 10.7567/apex.10.051001
  151. "Reducing energy dissipation and surface effect of diamond nanoelectromechanical resonators by annealing in oxygen ambient," Haihua Wu, Liwen Sang, Tokuyuki Teraji, Tiefu Li, Kongping Wu, Masataka Imura, Jianqiang You, Y. Koide, Meiyong Liao. CARBON. 124, 281 (2017). DOI: 10.1016/j.carbon.2017.08.069
  152. "Effect of sputter deposition atmosphere of AlN on the electrical properties of hydrogen-terminated diamond field effect transistor with AlN/Al2O3 stack gate," Ryan G. Banal, Masataka Imura,) Meiyong Liao, Jiangwei Liu, and Y. Koide, Physica Status Solidi (a), 217, 1700463 (2017). DOI: 10.1002/pssa.201700463.
  153. "Homoepitaxial diamond chemical vapor deposition for ultra-light doping," T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 70 197 (2017). 10.1016/j.mssp.2016.11.012.
  154. "Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy," M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi, Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy. J. Appl. Phys. 123 [9] (2018) 095701-1 10.1063/1.5016574.
  155. "窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価," M. Imura, R. G. Banal, M.Y. Liao, T. Matsumoto, A. Kumamoto, N. Shibata, Y. Ikuhara, Y. Koide, J. J. Assoc. for Cryst. Growth. 45 [1] 05-1 (2018). 10.19009/jjacg.3-45-1-05.
  156. "Annealing effects on hydrogenated diamond NOR logic circuits," J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide. Appl. Phys. Lett. 112 [15] (2018) 153501-1 10.1063/1.5022590
  157. "Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors," L. Sang, B. Ren, M. Liao, Y. Koide, M. Sumiya. J. App. Phys. 123 [16] (2018) 161423. 10.1063/1.5010952.
  158. "A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface," K. Wu, M. Liao, L. Sang, J. Liu, M. Imura, H. Ye, Y. Koide, J. Appl. Phys. 123 [16] (2018) 161599-1 10.1063/1.5002176.
  159. "Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates," Y. Lou, C. Song, Y. Chen, L. Singgappulige Rosantha Kumara, N. Palina, O. Seo, S. Hiroi, K. Kajiwara, M. Hoshino, K. Uesugi, Y. Irokawa, T. Nabatame, Y. Koide, and O. Sakata, CrystEngComm. 20 [20] (2018) 286. 10.1039/c8ce00229k.
  160. "An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors." J. Liu, Y. Koide, SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
  161. "Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer." O. Seo, J. Myung Kim, C. Song, Y. Lou, L. S. R. Kumara, S. Hiroi, Y. Chen, Y. Katsuya, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. AIP Advances. 8 [7] (2018) 075318. 10.1063/1.5042098 .
  162. "Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. Applied Physics Express. 11 [8] (2018) 081002. 10.7567/apex.11.081002
  163. "Reducing intrinsic energy dissipation in diamond-on-diamond mechanical resonators toward one million quality factor," H. Wu, L. Sang, Y. Li, T. Teraji, T. Li, M. Imura, J. You, Y. Koide, M. Toda, M. Liao. Physical Review Materials. 2 [9] (2018). 10.1103/physrevmaterials.2.090601.
  164. "Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)." Y. Irokawa, K. Mitsuishi, T. T. Suzuki, K. Yuge, A. Ohi, T. Nabatame, T. Ohnishi, K. Kimoto, Y. Koide. J. J. Appl. Phys. 57 [9] (2018) 098003-1-098003-3 10.7567/jjap.57.098003.
  165. “Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments,” B. Ren, M. Sumiya, M. Liao, Y. Koide, X. Liu, Y. Shen, L. Sang, J. Alloys and Compounds. 767 (2018) 600-605 (2018). 10.1016/j.jallcom.2018.07.150
  166. ”Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy,” M. Imura, Y. Ota, R. G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, Y. Koide. Physica Status Solidi (a). 215 [21] (2018) 1800282. 10.1002/pssa.201800282.
  167. ”Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates.” A. Kumar, K. Mitsuishi, T. Hara, K. Kimoto, Y. Irokawa, T. Nabatame, S. Takashima, K. Ueno, M. Edo, Y. Koide, Nanoscale Research Letters,” 13 [1] (2018) 10.1186. s11671-018-2804-y
  168. 4 inch wafer analysis; “Characterization of a 4-inch GaN wafer by X-ray diffraction topography,” J. Kim, O. Seo, C. Song, Y. Chen, S. Hiroi, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 20 [48] (2018) 7761-7765. 10.1039/c8ce01440j
  169. ”Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy.” Y. Irokawa, K. Mitsuishi, T. Nabatame, K. Kimoto, Y. Koide , Jpn. J. Appl. Phys. 57 [11] (2018)118003, 10.7567/JJAP.57.118003
  170. "Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. . Phys. Rev. Applied. 11 [2] 024072 (2019) 10.1103/physrevapplied.11.024072.
  171. "Ultrahigh Performance On-Chip Single Crystal Diamond NEMS/MEMS with Electrically Tailored Self-Sensing Enhancing Actuation," M.Y. Liao, L. Sang, T. Teraji, S. Koizumi, Y. Koide. Advanced Materials Technologies. 4 [2] (2019) 1800325, 10.1002/admt.201800325
  172. "High-quality SiNx /p-GaN metal-insulator-semiconductor interface with low-density trap states," B. Ren, M.Y. Liao, M. Sumiya, J. Su, X. Liu, Y. Koide, L. Sang. J. Physics D: Applied Physics. 52 [8] (2019), 085105 10.1088/1361-6463/aaf5ba
  173. "71Ga NMR characterization of an n-doped free-standing gallium nitride wafer," A. Goto, Y. Irokawa, T. Nabatame, M. Tansho, K. Hashi, S. Ohki, T. Shimizu, Y. Koide. J. J. Appl. Phys.. 58 [3] (2019) 031003 10.7567/1347-4065/aafd1a
  174. "Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, L. Sang, Y. Koide, T. Ohishi, Semicond. Sci. Technol. 34 [3] (2019) 034001 10.1088/1361-6641/aafdbd
  175. "Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography," J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 21 [14] (2019) 2281-2285 10.1039/c8ce01906a
  176. "Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases," M.Y. Liao, L. Sang, T. Shimaoka, M. Imura, S. Koizumi, Y. Koide. Advanced Electronic Materials. 5 [5] (2019) 1800832 10.1002/aelm.201800832
  177. "Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer," J. Kim, O. Seo, A. Tanaka, J. Chen, K. Watanabe, Y. Katsuya, T. Nabatame, Y. Irokawa, Y. Koide, O. Sakata. CrystEngComm. 21 [27] (2019) 4036-4041 10.1039/c9ce00463g
  178. "Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 C," J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. J. Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
  179. "Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique," Y. Irokawa, T. Nabatame, K. Yuge, A. Uedono, A. Ohi, N. Ikeda, Y. Koide. AIP Advances. 9 [8] (2019) 085319 10.1063/1.5098489
  180. "Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors," M. Hirose, T. Nabatame, K. Yuge, E. Maeda, A. Ohi, N. Ikeda, Y. Irokawa, H. Iwai, H. Yasufuku, S. Kawada, M. Takahashi, K. Ito, Y. Koide, H. Kiyono. Microelectronic Engineering. 216 (2019) 111040 10.1016/j.mee.2019.111040
  181. "Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors," Y. Irokawa, T. Nabatame, A. Ohi, N. Ikeda, O. Sakata, Y. Koide. J. J. Appl. Phys. 58 [10] (2019) 100915 10.7567/1347-4065/ab476a
  182. "Single-crystal diamond microelectromechanical resonator integrating with magneto-strictive galfenol film for magnetic sensor," Z. Zhang, H. Wu, L. Sang, J. Huang, Y. Takahashi, L. Wang, M. Imura, S. Koizumi, Y. Koide, M.Y. Liao. Carbon. 152 (2019) 788-795 10.1016/j.carbon.2019.06.072
  183. "High Current Output Hydrogenated Diamond Triple-Gate MOSFETs," J. Liu, H. Ohsato, Bo Da, Y. Koide. IEEE J. Electron Devices Society. 7 (2019) 561-565 10.1109/jeds.2019.2915250
  184. "High-performance visible to near-infrared photodetectors by using (Cd,Zn)Te single crystal," B. Ren, J. Zhang, M.Y. Liao, J. Huang, L. Sang, Y. Koide, L. Wang. . Optics Express. 27 [6] (2019) 8935 10.1364/oe.27.008935
  185. "High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors,"J. Liu, T. Teraji, B. Da, Y. Koide, IEEE Electron Device Lett. 40 [11] pp.1748-1751, (2019) DOI: 10.1109/LED.2019.2942967
  186. "Boosting the doping efficiency of Mg in p -GaN grown on the free-standing GaN substrates," L. Sang, B. Ren, R. Endo, T. Masuda, H. Yasufuku, M.Y. Liao, T. Nabatame, M. Sumiya, Y. Koide, Appl. Phys. Lett., 115 (17), (2019) art. no. 172103 DOI: 10.1063/1.5124904
  187. "High-k oxides on hydrogenated-diamond for metal-oxide-semiconductor field-effect transistors [Invited]," Y. Koide, IEEE International Conference on Microelectronic Test Structures, 2019-March, art. no. 8730974, pp. 40-46. DOI: 10.1109/ICMTS.2019.8730974
  188. "Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, L. Sang, Y. Koide, T. Ohishi, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, art. no. 8731166, pp. 368-370 (2019). DOI: 10.1109/EDTM.2019.873116
  189. "Single crystal diamond micromechanical and nanomechanical resonators," M.Y. Liao, Y. Koide, L., Sang, Topics in Applied Physics, 121, pp. 91-121. (2019) DOI: 10.1007/978-3-030-12469-4_4
  190. "Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field-Effect Transistors Based on 2D Hole Gas," M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide, Physica Status Solidi (A) Applications and Materials Science, art. no. 1900538,(2019) DOI: 10.1002/pssa.201900538
  191. “Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates,” Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Y. Koide, Liwen Sang. Applied Sciences; 9 [14] (2019), DOI: 2895 10.3390/app9142895.
  192. “Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors.” J. Liu, T. Teraji, B. Da, H. Ohsato, Y. Koide, IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685, 10.1109/ted.2020.2972979
  193. .“Enhanced magnetic sensing performance of diamond MEMS magnetic sensor with boron-doped FeGa film,” Z. Zhang, L. Sang, J. Huang, W. Chen, L. Wang, Y. Takahashi, S. Mitani, Y. Koide, S. Koizumi, M. Liao. Carbon. 170 (2020) 294-301, 10.1016/j.carbon.2020.08.049
  194. “Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors.” J. W. Liu, H. Oosato, B. Da, Y. Koide. Applied Physics Letters. 117 [16] (2020) 163502, 10.1063/5.0023086
  195. “Surface potential imaging and characterizations of a GaN p-n junction with Kelvin probe force microscopy,” T.Nakamura, N. Ishida, K. Sagisaka, Y. Koide. AIP Advances. 10 [8] (2020) 085010 10.1063/5.0007524
  196. “Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS,” H.Wu, Z. Zhang, L. Sang, T. Li, J. You, M. Imura, Y. Koide, M. Liao. Corrosion Science. 170 (2020) 108651, 10.1016/j.corsci.2020.108651
  197. “Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor,” B. Ren, M. Liao, M. Sumiya, J. Li, L. Wang, X. Liu, Y. Koide, L. Sang, Journal of Alloys and Compounds. 829 (2020) 154542 10.1016/j.jallcom.2020.154542
  198. “Enhancing Delta E Effect at High Temperatures of Galfenol/Ti/Single-Crystal Diamond Resonators for Magnetic Sensing,” Z. Zhang, H. Wu, L. Sang, Y. Takahashi, J. Huang, L. Wang, M. Toda, I. M. Akita, Y. Koide, S. Koizumi, M. Liao, ACS Applied Materials & Interfaces. 12 [20] (2020) 23155-23164, 10.1021/acsami.0c06593
  199. “Coupling of magneto-strictive FeGa film with single-crystal diamond MEMS resonator for high-reliability magnetic sensing at high temperatures,” Z. Zhang, Y. Wu, L. Sang, H. Wu, J. Huang, L. Wang, Y. Takahashi, R. Li, S. Koizumi, M. Toda, I. M. Akita, Y. Koide, M. Liao, Materials Research Letters. 8 [5] (2020) 180-186 10.1080/21663831.2020.1734680
  200. “Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond,” X. Yuan, J. Liu, S. Shao, J. Liu, J. Wei, B. Da, C. Li, Y. Koide. AIP Advances. 10 [5] (2020) 055114 10.1063/5.0008167
  201. “Electrical readout/characterization of single crystal diamond (SCD) cantilever resonators,” H. Wu, Z. Zhang, L. Sang, T. Li, J. You, Y. Lu, Y. Koide, M. Liao, Diamond and Related Materials. 103 (2020) 107711, 10.1016/j.diamond.2020.107711
  202. “Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography,” J. Kim, O. Seo, S. Hiroi, Y. Irokawa, T. Nabatame, Y. Koide, O. Sakata. RSC Advances. 10 [4] (2020) 1878-1882, 10.1039/c9ra08882b
  203. “Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance,” J. Liu, T. Teraji, B. Da, Y. Koide. IEEE Transactions on Electron Devices. 68 [8] 3963-3967. (2021). 10.1109/ted.2021.3087115
  204. “Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C,” X. Yuan, J-W. Liu, J-L Liu, J. Wei, B. Da, C. Li, Y. Koide, Coatings. 11 [4] 470 (2021). 10.3390/coatings11040470
  205. “Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition,” T. Nabatame, E. Maeda, M. Inoue, . Hirose, Y. Irokawa, A. Ohi, N. Ikeda, T. Onaya, K. Shiozaki, R. Ochi, T. Hashizume, Y. Koide, J. Vac. Sci. & Technol. A. 39 [6] 062405 (2021). 10.1116/6.0001334
  206. “The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces,” T.Tsuchiya, M. Takayanagi, K. Mitsuishi, M. Imura, S. Ueda, Y. Koide, T. Higuchi, K. Terabe, Communications Chemistry. 4 [1] (2021). 10.1038/s42004-021-00554-7
  207. “Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells,” L. Sang, M. Sumiya, M-Y Liao, Y. Koide, X. Yang, B. Shen. Appl. Phys. Lett. 119 [20] 202103 (2021). 10.1063/5.0071506
  208. “Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing,” X. Shen, H. Sun, L. Sang, M. Imura, Y. Koide, S. Koizumi, M-Y Liao, Physica Status Solidi (RRL) – Rapid Research Letters. 15 [9] (2021) 2100352 10.1002/pssr.202100352
  209. “Temperature dependence of Young's modulus of single-crystal diamond determined by dynamic resonance,” X. Shen, K. Wu, H. Sun, L. Sang, Z. Huang, M. Imura, Y. Koide, S. Koizumi, M-Y Liao. Diamond and Related Mater. 116 108403 (2021). 10.1016/j.diamond.2021.108403
  210. “Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates.” Y. Irokawa, T. Ohki, T. Nabatame, Y. Koide. Jpn. J. Appli. Phys. 60 [6] 068003 (2021). 10.35848/1347-4065/ac0260
  211. “Thermal mismatch induced stress characterization by dynamic resonance based on diamond MEMS,” H. Sun, X. Shen, L. Sang, M. Imura, Y. Koide, Ji. You, Tie-Fu Li, S. Koizumi, M-Y. Liao. Appl. Phys. Express. 14 [4] 045501 (2021). 10.35848/1882-0786/abe7b0
  212. “Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography,” J. Kim, O. Seo, L. S. R. Kumara, T. Nabatame, Y. Koide, O. Sakata. CrystEngComm. 23 [7] 1628-1633 (2021). 10.1039/d0ce01572e
  213. “Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer,” T. Liu, H. Watanabe, S. Nitta, J. Wang, G. Yu, Y. Ando, Y. Honda, H. Amano, A. Tanaka, Y. Koide. Appl. Phys. Lett. 118 [7] 072103 (2021). 10.1063/5.0034584
  214. “Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs,” J. Liu, O. Auciello, E. de Obaldia, B. Da, Y. Koide. Carbon. 172 112-121 (2021). 10.1016/j.carbon.2020.10.031
  215. “Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing,” M. Hirose, T. Nabatame, Y. Irokawa, E. Maeda, A. Ohi, N. Ikeda, L. Sang, Y. Koide, H. Kiyono. J. Vac. Sci. & Technol. A. 39 [1] 012401 (2021) 10.1116/6.0000626
  216. "Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection," Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide. Functional Diamond. 2 [1], 67-174 (2022). 110.1080/26941112.2022.2150526
  217. "Edge-of-chaos learning achieved by ion-electron–coupled dynamics in an ion-gating reservoir," Daiki Nishioka, Takashi Tsuchiya, Wataru Namiki, Makoto Takayanagi, Masataka Imura, Yasuo Koide, Tohru Higuchi, Kazuya Terabe. Science Advances. 8 [50] (2022). 10.1126/sciadv.ade1156
  218. "Natural band alignment of BAlN and BGaN alloys," Yuichi Ota, Masataka Imura, Ryan G Banal, Yasuo Koide. Journal of Physics D: Applied Physics. 55 [45] (2022). 455102 10.1088/1361-6463/ac8fff
  219. "Enhancement of magnetic sensing performance of diamond resonators coupling with magnetic-strictive FeGa films by various interlayers," Zilong Zhang, Liwen Sang, Jian Huang, Linjun Wang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Carbon. 200 401-409, (2022) 10.1016/j.carbon.2022.08.086
  220. "Effect of gas pressure on the quality-factor of single-crystal diamond micro cantilevers," Yinling Chen, Liwen Sang, Satoshi Koizumi, Yasuo Koide, Xiaoxi Liu, Meiyong Liao. Diamond and Related Materials. 129 109340 (2022) 10.1016/j.diamond.2022.109340
  221. "Identification of a nitrogen vacancy in GaN by scanning probe microscopy," Keisuke Sagisaka, Oscar Custance, Nobuyuki Ishida, Tomonori Nakamura, Yasuo Koide. Physical Review B. 106 [11] 115309 (2022). 10.1103/physrevb.106.115309
  222. "Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al2O3, HfO2, or Hf0.57Si0.43Ox Gate Dielectrics," Yoshihiro Irokawa, Mari Inoue, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology. 11 [8] (2022) 085010 10.1149/2162-8777/ac8a70
  223. "Stress effect on the resonance properties of single-crystal diamond cantilever resonators for microscopy applications," Xiulin Shen, Zhenfei Lv, Kimiyoshi Ichikawa, Huanying Sun, Liwen Sang, Zhaohui Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao. Ultramicroscopy. 234 (2022) 113464 10.1016/j.ultramic.2022.113464
  224. "Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs," Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. IEEE Transactions on Electron Devices. 69 [3] (2022) 1181-1185 10.1109/ted.2022.3140699
  225. "Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium," Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide, AIP Advances. 12 [1] (2022) 015203 10.1063/5.0076706

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