1. 2022, Plenary, "Cutting-Edge Diamond FET and MEMS Devices," Y. Koide, 2nd Global Summit on Polymer Science and Composite Materials, PolyScience2022, September 19-21, 2022, Balcelona, Spain.
2. 2022, "Surface and oxide interface characterization of n and p-GaN for power electronics," Y. Koide, T. Nabatame, Y. Irokawa, and K. Mituishi, Defects-Recognition and Imaging and Physics in Semiconductors (DRIP) XIX, August 29-September 1, 2022, online.
3. 2021, "Recent progress in data-driven materials research and development at NIMS," Y. Koide, ISPlasma2021/IC-PlantS2021, March 7-11, 2021 online
4. 2020, "Advanced diamond FET and MEMS devices," Y. Koide, 2020 Virtual MRS Spring/Fall Meeting and Exhibition, Simposium S. EL15: Ultra-Wide Bandgap Materials, Devices and Systems, December 1, 8:40 PM.
5. 2019, "Future prospect of diamond materials for semiconductor industry in 5G era," Y. Koide, 4th International Carbon Materials Conference & Exposition (CarbonTech 2019), November 26- 29, 2019, (Shanghai, China)
6. 2019, Keynote, "Advanced diamond FET and MEMS devices," Y. Koide, 2017 International Symposium on Single Crystal Diamond and Electronics (SCDE2019), June 10-12, 2019,　(Xi'an, China)
7. 2019, "Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics," O. Auciello, Elida de Obaldi, Jiangwei Liu, Y. Koide, Geunhee Lee, The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019), May 12-17, 2019, (Hualien, Taiwan)
8. 2019, "Wide Bandgap III-Nitride and Diamond Devices and Characterization," Y. Koide, 32nd IEEE International Conference on Microelectronic Test Structures, (ICMTS Conference), (Kita-Kyushu City, Japan) March 18-21, 2019.
9. 2018, "Electrical properties of H-terminated diamond FETs with AlN gate," Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao, 4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap Semiconductors) (Crete Greece) Oct. 14-19, 2018.
10. 2018, J.W. Liu, Y. Koide, "Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits,“4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap　Semiconductors) (Crete Greece) Oct. 14-19, 2018.
11. 2018, "Development of AlN/Diamond heterostructure formation and unique interface property," M. Imura, M. Liao, and Y. Koide, European Materials Research Society (EMRS) 2018 Fall Meeting, Diamond Electronic Devices III, (Warsaw, Poland) September 17-20, 2018.
12. 2018, "Enhancement-mode hydrogenated diamond MOSFETs," J. Liu, M. Liao, M. Imura, Y. Koide, 29th International Conference on Diamond and Carbon Materials. (ICDCM 2018) September 2-6, 2018. (Dubrovnik, Croatia)
13. 2018, "High-quality diamond epitaxial layer growth and electron devices application," Y. Koide, J. Liu, M. Imura, and M.Y. Liao, SSDM2018, (Tokyo, Japan) September 13, 2018, Area 11: Growth & Characterization, E-7: Advanced Growth of Widegap Semiconductors: E-7-01.
14. 2017, "Semiconductor diamond: from fundamental to applications," .M. Liao, Y. Koide, The 8th Asia-Pacific Workshop on Widegap Semiconductors. (APWS 2017) September 25-27, 2017 (Qindao, China)
15. 2017, "Normally-on/off control of diamond FETs and logic circuit demonstration," Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao, E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland) Sept. 19, 2017
16. 2017, "Development of normally-on/off diamond MOSFETs and logic circuits," Y. Koide, Schulich Symposium, Diamond: From fundamental properties to quantum technologies, Schulich faculty of Chemistry, Technion - Israel Institute of Technology, September 16-18, 2017, (Haifa, Israel).
17. 2017, "D/E-mode control of diamond FETs and logic circuit demonstration," Y. Koide, 2017 International Symposium on Single Crystal Diamond and Electronics (2017 SCDE), June 11-12, 2017, Xi'an Jiantong University, (Xi'an, Chaina)
18. 2017, "Homoepitaxial chemical vapor deposition of diamond film for ultra-light doping." T. Teraji, J. Isoya, S. Koizumi, Y. Koide, The 11th International Conference on New Diamond and Nano Carbon (NDNC 2017), May 22-25, 2017. (Fragstaff, USA)
19. 2017, "Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N₂ Atmosphere." M. Imura, R. Banal, J. Liu, M. Liao, Y. Koide, Hasselt Diamond Workshop March 8-10, 2017 - (SBDD XXII 2017). (Hasselt, Belgium)
20. 2016, "Wide Bandgap III-Nitride and Diamond Materials and Devices," Y. Koide, 9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9), August 1-5, 2016, (Kyoto, Japan).
21. 2016, Plenary, "Wide Bandgap III-Nitride and Diamond Materials and Devices," Y. Koide, 10th International Conference on New Diamond and Nano Carbons (NDNC2016), May 22-27, 2016, (Xi'an, China).
22. 2015, "Diamond MOSFETs with high-k gate oxides," Y. Koide, 2015 MRS Fall Meeting, Symposium DD, Electronic Devices II : DD13.01, November 30-December 3, 2015, Hynes Convention Center, (Boston USA).
23. 2015, "H-Diamond MOSFETs with high-k oxide gate," Y. Koide, 3rd French-Japanese Workshop on Diamond Power Devices, July 7-10 2015, C-Suites Hotel, (Niems France).
24. 2015, "E and D-modes Diamond MOSFETs," Y. Koide, OMNT, International Symposium on Diamond, Elavolation, Devices and Applications. July 6, 2015, CNRS, Amphiltheater, (Grenoble France).
25. 2015, "Diamond Field Effect Transister, Deep-UV sensor, and MEMS Devices,"Y. Koide, 2015 Collaborative Conference on 3D & Materials Research (2015 CC3DMR), June 15 - 19, 2015, BEXCO, (Busan, South Korea)
26. 2015, Plenary, "III-Nitrides and Diamond Devices," Y. Koide, 2015 International Symposium on Single Crystal Diamond and Electronics (2015 SCDE), June 12-14, 2015, Xi'an Jiantong University, (Xi'an, Chaina)
27. 2015, "High-k Oxide Gate Diamond FETs," Y. Koide, 2015 MRS Spring Meeting, Symposium CC, April 6-10, 2015, (SanFrancisco, USA). MRS OnDemand CC10.02
28. 2015, "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, J-W. Liu, M. Imura, and M-Y. Liao, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2015) / 8th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2015), March 26-31, 2015 (Nagoya, Japan)
29. 2014, "Diamond Electronic Devices for Future Application," Y. Koide, 2014 Asia-Pacific Microwave Conference (APMC 2014), November 4-7, 2014 (Sendai, Japan).
30. 2014, "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, European Microwave Integrated Circuit Conferece (EUMIC 2014), October 5-10, 2014 (Rome, Italy).
31. 2014, "Diamond FETs with high-k oxide gate dielectrics," Y. Koide, International Conference on Diamond and Carbon Materials (ICDCM 2014), September 8-11, 2014 (Madrid, Spain). Grobal Conferences Web Version.
32. 2014, "Diamond Field Effect Transistors with high-k gate insulator," Y. Koide, International Materials Research Congress (IMRC 2014), August 17-21, 2014 (Cancun, Mexico).
33. 2014, "Diamond Electronic and Photonic Devices," Y. Koide, 2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014), June 12-17, 2014 (Xi'an, China).
34. 2013, "Diamond heterojunction and high-k Dielectric FETs," Y. Koide, IEEE Nano Materials and Devices Conference (IEEE-NMDC 2013), Oct. 6-9, 2013 (Tainan, Taiwan).
35. 2013, "Challenge to Develop Diamond Power Devices for Energy Saving," Y. Koide, The 8th Pacific Rim International Congress on Advanced Materials and Processing (PRICM8), August 4-9, 2013 (Waikolona Hawaii, USA).H. Rare Earth, Electronic, and Magnetic Materials: Electronic Materials.
36. 2013, "Diamond Heterojuncton and High-k Dielectric Gate FETs," Y. Koide, 1st French-Japanese Workshop, June 20-21, 2013, (Chamonix, France), Y. Koide.
37. 2013, "Challenge to Develop Diamond Electronic and Photonic Devices for Energy Saving," Y. Koide, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), June 17-20, 2013, (Kanazawa, Japan), B3-1, Inorganiic Electronics,
38. 2012, "Challenge to Development of Diamond Power Devices for Energy Saving," Y. Koide, Ineternational Conference on Emerging Advanced Nanomaterials (ICEAN-2012), October 22-25, 2012 (Brisbane, Australia).
39. 2012, "Diamond-FET using AlN/diamond heterojunction,"M. Imura, M. Y. Liao, Y. Koide, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-2 Wide Bandgap Semiconductors, B-2-I28-001, September 23-28, 2012, (Yokohama, Japan).
40. 2012,"Single crystal diamond MEMS/NEMS devices," M. Y. Liao, S. Hishita, S. Koizumi, L. W. Sang, M. Imura, and Y. Koide, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), September 4, IS10, 11:00-11:30, Sept. 3-6, 2012, (Granada, Spain).
41. 2012, "Challenge for Development of Diamond Electronic and Optical Devices for Energy Saving," Y. Koide, The 9th Asia Nano Forum Summit (ANFoS 2012), Green Nanotechnology Session, August 21-24, 2012, (Bangkok, Thailand)
42. 2012, "Filed effect transistors by AlN/diamond heterostructure -past and future-," M. Imura, R. Hayakawa, H. Ohstao, E. Watanabe, D. Tsuya, M. Y. Liao, and Y. Koide, H. Amano, SBDD XVII, March 14-16, 2012, (Hasselt, Belgium)
43. 2012, "Diamond MEMS/NEMS for harsh environments," M.Y. Liao, S. Hishita, S. Koizumi, M. Imura, Y. Koide, NanoThailand 2012 Conference, April 9-11, 2012, (Khon Kaen, Thailand).
44. 2011, "Deep-Dopant Effect for Diamond Ultraviolet Sensor," ECI Carbon-based Nanomaterials and Devices, Oct. 17-22, 2011, (Suzhou, China), Y. Koide
45. 2010, "Deep-Dopant Effect for Diamond Electronic and Photonic Devices," NDNC2010, May 16-19, 2010, Garden Hotel, (Suzhou, China). Session A11, Y. Koide.
46. 2010, "Diamond UV detectors and sensing mechanism," Hasselt Diamond Workshop 2010, SBDD XV, February 22-24,  2010, Cultuurcentrum Hasselt (Cultural Centre), (Hasselt, Belgium). Session 11, 11.1, Y. Koide, M.Y. Liao, M. Imura, J. Alvarez, J-P. Kleider.
47. 2010, "Bridging wide bandgap nanowires for ultraviolet light detection," J.-J Delaunay, Y. B. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide and I. Yamada, 20th MRS Japan Conference, Session E, December 20-21, 2010, Yokohama.
48. 2008, "Diamond deep-UV photodetector with high sensitivity and thermal stability." The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2008), September 7-11, 2008, Abst. 13.1 (Sitges, Spain). Y. Koide, M. Y. Liao, M. Imura, and J. Alvarez.
49. 2007, "Metal-Diamond Semiconductor Interface and Photodiode Application." The Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-5), November 12-14, 2007, (Hachioji Japan). Y. Koide.
50. 2006, "Thermally stable solar-blind diamond deep-UV detector," Y. Koide, International Worksho on The Application of Nanocrystalline Diamond Like Carbon Materials, (IWAncDLC-2006), 11/28-12/1, 2006. (Kolkata, India), Abst.
51. 2006, "Thermally stable solar-blind diamond UV-detectors," Y. Koide, M. Y. Liao, J. A. Alvarez, International Conference of New Diamond Science and Technology (ICNDST) and Advanced Diamond Conference (ADC) 2006 Joint Conference, 5/15-18, 2006. (Triangle Research Park, NC, USA), Abst. A12.1.
52. 2003, "Development of Ohmic contact Materials for Compound Semiconductors," M. Murakami, Y. Koide, M. Moriyama, and T. Tsukimoto, American Vacuum Society (AVS) 50th International Symposium and Exhibition, 11/2-7, 2003. (Baltimore, USA), Abst. EM-ThM4.
53. 2002, "Interaction between Mg-H complex and electron beam or oxygen in Mg-doped GaN epilayer." 2002 Fall Materials Research Society Meeting, December 1-6, 2002 (Boston, USA). Session L, L12.1, Abst. p. 162. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
54. 2001, "Critical issures for development of low-resistance Ohmic contacts for p-GaN." Frontier Science Research Conferences, Niride Materials, FSRC, November 19-21, 2001 (La Jolla, USA) Abst. p. 25. Y. Koide
55. 2000, "Critical issues for development of thermally sable, low resistance Ohmic contact materials for p-type GaN." The 10th International Conference of Solid Films and Surfaces, July 9-14, 2000, (Princeton, USA), Abst. p. PTE-24. Y. Koide and M. Murakami
56. 1999, "Low-resistance Ohmic contact materials for p-GaN." The 1999 Joint International Meeting of ECS, October 17-22, 1999, (Honolulu, USA), Abst. vol. 99-2, No. 761. Y. Koide, T. Maeda, M. Suzuki, T. Kawakami, T. Uemura, N. Shibata, and M. Murakami
57. 1998, "Ohmic contact materials for p-type GaN." Fall Meeting of 98 MRS, November 30-December 4, 1998, (Boston, USA) Session G9, Abst. p.54. M. Murakami, Y. Koide, T. Kawakami, T. Maeda, M. Suzuki, T. Uemura, and N. Shibata
58. 1998, "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." 2nd Symp. on Diamond Electronics Devices, (Osaka, Japan) Abst. p.8, March 9-10, 1998. Y. Koide, T. Toyama, and M. Murakami
59. 1997, "Ohmic contacts of wide gap compound semiconductors." The 192nd Meeting of The Electrochemical Society, Inc. And the 48th Annual Meeting of the International Society of Electrochmistry, (Paris, France)., August 31 - September 5, 1997. M. Murakami and Y. Koide
60. 1994, "Ohmic contact materials for compound semiconductors". 36th Electronic Materials Conference, LosAngeles (California, USA), Abst. p. 210 , September, 1994. M. Murakami, T. Oku, Y. Koide, and K. Tsukui

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