国際会議発表（２３３件）：日本語ホームへ, English Main Page,

  1. Oral, Epitaxial Growth of AlxGa1-xN by MOVPE. 17th Int. Conf. on Solid State Devices and Materials, (Tokyo, Japan) Abst. p. 6-7, August, 1985 Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto.
  2. Oral, Formation of Si-SiO2 Interface at Low Temperatures Using Microwave-Excited Plasma. 2nd Int. Conf. on Formation of Semiconductor Interface, (Takarazuka, Japan) Abst. p.161, November, 1988 S. Zaima, T. Kaida, Y. Koide, Y. Yasuda
  3. Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy. 9th Int. Conf. on Crystal Growth, (Sendai, Japan), Abst. p. 5, August, 1989 Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  4. Oral, Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate. 5th Int. Conf. on Solid Films and Surfaces, (Rhode Island, USA) Abst. Session 14A, August, 1990 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  5. Observation of Si-SiO2 Interface States within The Conduction Band by Tunneling Current Spectroscopy. 3rd Int. Conf. on Formation of Semiconductor Interface, (Rome, Italy) Abst. p.168, May, 1991 M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda
  6. Formation of Interfacial Layers and Electrical Conduction Mechnisms Dominating The Contact Resistivity in Refractory Metal-Metal-Si Contacts. 3rd Int. Conf. on Formation of Semiconductor Interface, (Rome, Italy) Abst. p.89, May, 1991 T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
  7. Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing. 7th Int. Conf. on Vapor Growth and Epitaxy, (Nagoya, Japan) Abst. p.165, July, 1991 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  8. Oral, In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy. 7th Int. Conf. on Vapor Growth and Epitaxy, (Nagoya, Japan) Abst. p.238, July, 1991 Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
  9. Oral, In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source Molecular Beam Epitaxy. 3rd Int. Conf. Chemcal Beam Epitaxy and Related Growth Techniques, (Oxford, UK), Abst. F6, September, 1991 Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  10. Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy. 1st Int. Conf. on Atomically Controlled Surfaces and Interfaces, (Tokyo, Japan) Abst. p.142, November, 1991 N. Ohshima, S. Zaima, Y. Koide, and Y. Yasuda
  11. Oral, Initial Stage of Ge Film Grown on (311)Si by Gas Source Molecular Beam Epitaxy. 10th Int. Conf. on Crystal Growth, (San Diego, USA) Abst. p. 321, August, 1992 Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, S. Zaima
  12. Oral, Growth Behaviors of the Initial Ge Two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH4 Source Molecular Beam Epitaxy. 4th Int. Conf. on the Formation of Semiconductor Interfaces, (Julich, Germerny) Abst. July, 1993 M. Okada, Y. Koide, S. Zaima, and Y. Yasuda
  13. Photo-irradiation Effects in the Initial Stage of Si Homoepitaxial Growth by Si2H6 Source MBE. 1st Int. Conf. on Photo-Excited Processes and Applications, (Sendai, Japan) Abst. p.156, Ocotber, 1993 . Y. Koide, M.Okada, S.Zaima, and Y.Yasuda
  14. Oral, High-spatial Resolution Analysis of Semiconductor Superlattices by nm-sized Electron Probe. 1st Int. Symp. on Control of Interfaces of Semicon-ductor Interfaces, (Karuizawa, Japan), Abst. A5, November, 1993. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda
  15. Invited Talk 1, "Ohmic contact materials for compound semiconductors". 36th Electronic Materials Conference, LosAngeles (California, USA), Abst. p. 210 , September, 1994. M. Murakami, T. Oku, Y. Koide, and K. Tsukui
  16. Oral, "Cd-based Ohmic Contact Materials to p-type ZnSe." 7th Int. Conf. on II-VI Compound Semiconductors and Devises, (Edingburgh, UK), Abst. Fr9, August 12 - 17, 1995. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  17. Oral, "Dpendence of electrical properties on work functions of metals contacting to p-type GaN." 2nd Int. Symp. on Control of Semiconductor Interfaces, (Karuizawa, Japan) Abst. B5-5, p.45. October, 1996. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
  18. Oral, "Contact resistance between carbide and non-carbide forming metals and p-diamond." 1st Symp. on Diamond Electronics Devices, (Osaka, Japan) Abst. p.28, March 9-10, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
  19. "Current transport mechanism through p-diamond/metal interfaces." 5th Int. Conf. on New Diamond and Technology, (Tours, France) Abst.11.090, September, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
  20. Invited Talk 2, "Ohmic contacts of wide gap compound semiconductors." The 192nd Meeting of The Electrochemical Society, Inc. And the 48th Annual Meeting of the International Society of Electrochmistry, (Paris, France)., August 31 - September 5, 1997. M. Murakami and Y. Koide
  21. Oral, "Schottky barrier heights of contact metals to p-ZnSe." The 1997 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Santa Barbara (California, USA), Abst. p. 129, October 21 - 23, 1997. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  22. Invited Talk 3, "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." 2nd Symp. on Diamond Electronics Devices, (Osaka, Japan) Abst. p.8, March 9-10, 1998. Y. Koide, T. Toyama, and M. Murakami
  23. Oral, "Electrical properties of p-ZnSe/metals interfaces with intermediate semiconductor layers", Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM-3), July 12-16, 1998, Honolulu, (Hawaii, USA). Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
  24. Oral, "Electrical properties at p-ZnSe/metal interfaces of annealed contacts.", Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM-3), July 12-16, 1998, Honolulu, (Hawaii, USA) T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
  25. Oral, "Effect of annealing ambience on electrical properties of Ohmic contacts to p-GaN." 40th Electronic Materials Conference, Charlottesville (Virginia, USA) Abst. Session U, U5, p. 12. June 24-26, 1998. Y. Koide, T. Maeda, S. Fujita, T. Uemura, N. Shibata, and M. Murakami
  26. Oral, "Ohmic contact materials to p-ZnSe and p-GaN." 25th International Symposium on Compound Semiconductors (ISCS'98), (Nara, Japan) Abst. TuP-39, December 12-16, 1998. Y. Koide, T.Kawakami, and M. Murakami
  27. Oral, "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." 25th International Symposium on Compound Semiconductors (ISCS '98), (Nara, Japan) Abst. TuP-39, October 12-16, 1998. A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide, and M. Murakam
  28. Invited Talk 4, "Ohmic contact materials for p-type GaN. "Fall Meeting of 98 MRS, November 30-December 4, 1998, (Boston, USA) Session G9, Abst. p. 54. M. Murakami, Y. Koide, T. Kawakami, T. Maeda, M. Suzuki, T. Uemura, and N. Shibata
  29. Oral, "Current transport mechanisms of low-resistance TaTi Ohmic contacts for p-GaN." 41th Electronic Materials Conference, Santa Barbara (California, USA) Session AA, Abst. p.66. June 30-July 2, 1999. Y. Koide, M. Suzuki, T. Arai, T. Kawakami, T. Uemura, N. Shibata, Y. Taga, and M. Murakami
  30. Invited Talk 5, "Low-resistance Ohmic contact materials for p-GaN." The 1999 Joint International Meeting of ECS, October 17-22, 1999, (Honolulu, USA), Abst. vol. 99-2, No. 761. Y. Koide, T. Maeda, M. Suzuki, T. Kawakami, T. Uemura, N. Shibata, and M. Murakami
  31. Oral, "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Third International Symposium on Control of Semiconductor Interfaces (ISCSI-III), (Karuizawa, Japan), Abst. A5-5, Octorber 25-29, 1999. K. Asamizu, T. Yamaguchi, Y. Koide, and M. Murakami
  32. Oral, "Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," 42th Electronic Materials Conference, Denver (Colorado, USA) Session J, Abst. p. 18, June 21-July 22, 2000.Y. Koide, T. Maeda, and M. Murakami
  33. Invited Talk 6, "Critical issues for development of thermally sable, low resistance Ohmic contact materials for p-type GaN." The 10th International Conference of Solid Films and Surfaces, July 9-14, 2000, (Princeton, USA), Abst. p. Tu.B-1500. Y. Koide and M. Murakami
  34. Oral, "Surface damages of diamond-based electron emitters," 7th Int. Conf. on New Diamond and Technology (ICNDST-7), Hong Kong (Hong Kong) Abst., July 25-29, 2000. Y. Koide, T. Asari, M. Itahashi, K. Umehara, M. Moriyama, T. Hanada, and M. Murakami
  35. Oral, "Deterioration mechanism of low-resistance TaTi Ohmic contact for p-GaN." The International Union of Materials Research Societies, 6th International Conference in Asia, Session F: GaN and Related Wide Band Gap Semiconductors, Hong Kong (Hong Kong) Abst. F5.4, July 23-26, 2000. Y. Koide, T. Arai, S. Szuki, T. Kawakami, and M. Murakami
  36. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN." International Workshop on Nitride Semiconductors -IWN2000-, Septermber 24-27, 2000, (Nagoya, Japan), Abst. PTE-24. Y. Koide, T. Arai, and M. Murakami
  37. Oral, "CoAl Ohmic contact materials with improved surface morphology for p-type 4H-SiC", International Conference on Silicon Carbide and Related Materials 2001, (Tsukuba, Japan) Nobember, 2001. Osamu Nakatsuka, Y. Koide, and Masanori Murakami.
  38. Invited Talk 7, "Critical issures for development of low-resistance Ohmic contacts for p-GaN." Frontier Science Research Conferences, Niride Materials, FSRC, November 19-21, 2001 (La Jolla, USA) Abst. p. 25. Y. Koide
  39. Oral, "Effect of Co or Ni addition to TiAl Ohmic Contadt for p-Type 4H-SiC, 2002 Electronic Materials Conference, (44th EMC) Santa Barbara (Carifornia, USA) June 26-28, 2002, Session NN, Abst. p..57, O. Nakatsuka, R. Konishi, R. Yasukouchi, Y. Koide, and M. Murakami
  40. Invited Talk 8, "Interaction between Mg-H complex and electron beam or oxygen in Mg-doped GaN epilayer." 2002 Fall Materials Research Society Meeting, December 1-6, 2002 (Boston, USA). Session L, L12.1, Abst. p. 162. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  41. "Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." The 10th International Symposium for Advanced Materials (ISAM10), March 10-13, 2003, (Tsukuba, Japan) Abst. 89-90. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  42. "Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." he 1st International National Institute for Materials Science Conference, March 17-19, 2003, (Tsukuba, Japan), p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  43. Oral, "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." The 5th International Conference of Nitride Semiconductors (ICNS5), May 25-30, 2003, (Nara, Japan). Abst. Tu-A4.4. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  44. Invited Talk 9, "Development of Ohmic contact Materials for Compound Semiconductors," M. Murakami, Y. Koide, M. Moriyama, and T. Tsukimoto, American Vacuum Society (AVS) 50th International Symposium and Exhibition, 11/2-7, 2003. (Baltimore, USA), Abst. EM-ThM4.
  45. Oral, "On the peculiarity of depletion layer in diamond pn-junction." The 50th American Vacuum Society Meeting (50th AVS), Electronic Materials and Devices, November 2-7, 2003. (Baltimore, USA) Abst. p. 127, EM-WeA2, Y. Koide.
  46. Oral, "Depletion layers in schottky and pn junctions for diamond with deep dopants." The 9th International Conference on New Diamond Science and Technology (ICNDST-9) March 26-29, 2004. (Tokyo, Japan), Abst. 6-4. Y. Koide.
  47. Oral, "Enhancement of donor ionizaiton in phosphorus-doped n-diamond." The 12th International Conference of Solid Films and Surfaces (ICSFS-12), June 21-25, 2004 (Hamamatsu, Japan) Y. Koide.
  48. Oral, "Theoretical analysis of electron statistics for n-type diamond." The Fifth Pacific Rim International Conference on Advanced Materials and Processing (PRICM-5), Nov. 2-5, 2004, (Beijing, China), Y. Koide.
  49. Oral, “Enormous photocurrent for hydrogenated single-crystalline B-doped diamond epilayers grown by microwave-excited plasma chemical vapor deposition.” The 51th American Vacuum Society Meeting (51th AVS), Electronic Materials and Devices, November 10-15, 2004. (Anahiem, USA) Y. Koide.
  50. Oral, "Development of thermally stable, visible-blind deep ultraviolet diamond sensor." Japan-US Workshop on The Future of Sensors and Sensor Systems in Tsukuba (Sensor Workshop 05), Science Council of Japan, National Science Accademy (USA), NIMS, Feburary 28-March 2, 2005. (Tsukuba, Japan) Abst. p.5, Y. Koide.
  51. "Metal-Semiconductor-Metal devices on diamond crystals for the UV detection," Japan-US Workshop on The Future of Sensors and Sensor Systems in Tsukuba (Sensor Workshop 05), Science Council of Japan, National Science Accademy (USA), NIMS, Feburary 28-March 2, 2005. (Tsukuba, Japan) Abst. p.50, J. Alvarez, M. Y. Miao, and Y. Koide
  52. "Refractory metal carbide as thermally stable Schottky contact of diamond photosensor for deep-ultraviolet detection," Japan-US Workshop on The Future of Sensors and Sensor Systems in Tsukuba (Sensor Workshop 05), Science Council of Japan, National Science Accademy (USA), NIMS, Feburary 28-March 2, 2005. (Tsukuba, Japan) Abst. p. 52, M. Y. Miao, J. Alvarez, and Y. Koide
  53. Oral, "Admittance spectroscopy of phosphorus-doped n-diamond homoepitaxial layer." The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, AIST, (Tsukuba, Japan) Session ADD Project 9-1, Abst. p.61, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  54. "Visible-blind diamond photodiode using thermally-stabel WC Schottky contact," The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, (Tsukuba, Japan), P6-30, Abst. p.226, M. Y. Liao, J. Alvarez, and Y. Koide.
  55. "High ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped homoepitaxial diamond." The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, (Tsukuba, Japan) P6-31, Abst. p.227, J. Alvarez, M. Y. Liao, and Y. Koide.
  56. Oral, "Simulation of band diagram for CVD diamond surface conductivity." The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, (Tsukuba, Japan), P5-10, Abst. p.194, S. Kono and Y. Koide.
  57. Oral, “Development of thermally stable, visible-blind deep-ultraviolet diamond photodiode,” 24th Electronic Materials Symposium (EMS-24), July 4-6, 2005, (Matsuyama, Japan), Session B: Wide-Bandgap Optical Devices, B10, Y. Koide, M. Y. Liao, and J. Alvarez.
  58. Oral, "Admittance spectroscopy of phosphorus-doped n-diamond epilayer," 24th Electronic Materials Symposium (EMS-24), July 4-6, 2005, (Matsuyama, Japan), Special Session: Characterization of Wide-Bandgap Semiconductors, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  59. "Bias-dependence of spectral photo-response of metal-semiconductor-metal structures on diamond." The 23rd International Conference on Defects in Semiconductors (ICDS-23), July 24-29, 2005, (Awaji Island, Japan), TuP. 10, J. Alvarez, M. Y. Liao, and Y. Koide.
  60. "Development of thermally stable, visible-blind diamond photodiode using a tungsten carbide electrode contact." 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides, (Diamond 2005), September 11-16, 2005 (Toulouse, France), 5.7.10, Y. Koide, M. Y. Liao, and J. Alvarez.
  61. Oral, "Schottky-barrier diamond photodiode using thermally stable WC-based contacts." 2005 International Conference on Solid-State Device and Materials (SSDM 2005), September 13-15, 2005, (Kobe, Japan), M. Y. Liao, J. Alvarez, and Y. Koide.
  62. Oral, “Diamond photodiode using thermally stable WC Schottky contact for deep ultraviolet light detection,” The 11th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XI), September 15-19, 2005, (Beijing, China), M. Y. Liao, J. Alvarez, and Y. Koide.
  63. Oral, "Surface Conductive Layer of CVD Diamond: Simulation of Surface Energy Band." The 3rd Int. Symposium on Mechanical Science based on Nanotechnology, Nov. 18-19, 2005, (Sendai, Japan), S. Kono and Y. Koide.
  64. Oral, "Surface Conductive Layer of CVD Diamond: Simulation of Surface Energy Band," Int. Symposium on Surface Physics 2006, Jan. 10-13, 2006, (Shizukuishi, Japan), S. Kono and Y. Koide.
  65. Invited Talk 10, "Thermally stable solar-blind diamond UV-detectors," Y. Koide, M. Y. Liao, J. A. Alvarez, International Conference of New Diamond Science and Technology (ICNDST) and Advanced Diamond Conference (ADC) 2006 Joint Conference, 5/15-18, 2006. (Triangle Research Park, NC, USA), Abst. A12.1.
  66. Oral, "High-performance Schottky Photodiode Operating at Forward Biases," M. Y. Liao and Y. Koide, International Conference of New Diamond Science and Technology (ICNDST) and Advanced Diamond Conference (ADC) 2006 Joint Conference, 5/15-18, 2006. (Triangle Research Park, NC, USA), Abst. A12.3.
  67. Oral, "Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopyElectrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy," J. Alvarez, F. Houze, J.P.Kleider, M. Liao, and Y. Koide, The Europian Materials Research Society (EMRS) Spring Meeting, Syposium S, May 29th-June 2nd, 2006, (Nice, France).
  68. "High-performance Visible-blind Photodetector on Single-crystalline Diamond Thin Film," M. Y. Liao and Y. Koide, International Conference of Aerospace Materials, 2006 BIMW, June 25-30, (Beijing, China) 2006, Abst. Fe-27.
  69. Oral, "Mechanism of optical gain for p-diamond Schottky photodiode," Y. Koide and M. Y. Liao, The 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Diamond 2006, September 3-8, 2006, (Estoril, Portugal)
  70. "Local photoconductivity on diamond metal-semiconductor-metal photodetectors measured by conducting probe atomic force microscopy," J. Alvarez, F. Houze, J. P. Kleider, M.Y. Liao, Y. Koide. The 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, Diamond 2006, September 3-8, 2006, (Estoril, Portugal)
  71. Invited Talk 11, "Thermally stable solar-blind diamond deep-UV detector," Y. Koide, International Worksho on The Application of Nanocrystalline Diamond Like Carbon Materials, (IWAncDLC-2006), 11/28-12/1, 2006. (Kolkata, India), Abst.
  72. Oral, "Single Schottky-barrier diamond photodiode with interdigitated electrodes." M.Y. Liao, J. Alvarez, Y. Koide, The First International Conference on New Diamond and Nano Carbons (NDNC2007), May 28-31, 2007. (Osaka, Japan).
  73. "Photoelectrical properties of  hydrogen terminated diamond exposed to ArF excimer laser pulses," J. Alvarez, M.Y. Liao, Y. Koide, and J. P.  Kleider, The First International Conference on New Diamond and Nano Carbons. (NDNC2007), May 28-31, 2007. (Osaka, Japan).
  74. Oral, "High responsitivity submicron metal-semiconductor-metal deep ultraviolet diamond detector," M. Liao, J. Alvarez, and Y. Koide. International Conference on Nanoscience & Technology, China 2007, (ChinaNANO 2007), June 4-6, 2007, (Beijing, China).
  75. "Comparison of photoresponse properties for p-diamond deep-ultraviolet photodetectors with various device structures." The 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2007), September 9-14, 2007, Abst. P1.10.04 (Berlin, Germany). Y. Koide, M. Y. Liao,J. Alvarez.
  76. Invited Talk 12, "Metal-Diamond Semiconductor Interface and Photodiode Application." The Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-5), November 12-14, 2007, (Hachioji Japan). Y. Koide.
  77. "Development of flame sensor using diamond visible-blind ultraviolet photodiode." New Diamond and Nano Carbons (NDNC2008), May 26-29, 2008, (Taipei, Taiwan). Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, and F. Yoshifusa
  78. "Vertical-type Schottcky-Barrie Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate." New Diamond and Nano Carbons (NDNC2008), May 26-29, 2008, (Taipei, Taiwan). M. Imura, Y. Koide, M. Y. Liao, and J. Alvarez.
  79. Outstanding Poster Award, "Devices design in solar-blind diamond photodetectors." New Diamond and Nano Carbons (NDNC2008), May 26-29, 2008, (Taipei, Taiwan). M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide.
  80. Invited Talk 13, "Diamond deep-UV photodetector with high sensitivity and thermal stability." The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2008), September 7-11, 2008, Abst. 13.1 (Sitges, Spain). Y. Koide, M. Y. Liao, M. Imura, and J. Alvarez.
  81. Oral, "Fabrication of Diamond Field Emitter Coatedwith Tungsten Carbide", The 4th IEEE-MEMS/NEMS Conference, Jan. 4-7, 2009, (Beijing, China), M.Y. Liao, N. Ikeda, X. S. Fang, Y. Sugimoto and Y. Koide.
  82. Oral, "Low-leakage p-diamond Schottky diodes with lateral configuration," Hasselt Diamond Workshop 2009, SBDD XIV, March 2 ? 4, 2009, (Hasselt, Belgium), T. Teraji, Y. Garino, Y. Koide, T. Ito.
  83. "Systematic study on surface plasmon-enhanced extra-ordinary optical transmission in an aluminum-film hole-array," The 8th International Photonic & Electromagnetic Crystal Structures Meeting (PECS VIII ), April 5-9, 2009, (Sydney, Australia), N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, K. Asakawa, A. Miura, D. Inoue, T. Nomura, H. Fujikawa, K. Sato.
  84. Oral, "Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector," New Diamond and Nano Carbons (NDNC2009), June 7-11, 2009, (Traverse City, USA), Y. Koide, M. Y. Liao, M. Imura, J. Alvarez, and J-P. Kleider.
  85. "Growth of AlN on (001) diamond substrate by metal-organic vapor phase epitaxy," New Diamond and Nano Carbons (NDNC2009), June 7-11, 2009, (Traverse City, USA), M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, H. Amano.
  86. "Comparison of AlN growth on between (001) and (111) diamond substrates by metal-organic vapor phase epitaxy," The 17th American Conference on Crystal Growth and Epitaxy (ACCGE-17), August 9 - 14, 2009, (Lake Geneva, Wisconsin, USA), M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, H. Amano.
  87. "RGB Color Filter comprising Aluminum Film with Surface Plasmon Enhanced Transmission through Sub-Wavelength Hole-Arrays," IEEE/LEOS Optical MEMS and Nanophotonics 2009, August 17-20, (Florida, USA), D. Inoue, T. Nomura, A. Miura, H. Fujikawa, K. Sato, N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, and K. Asakawa.
  88. "Analysis of polar direction of AlN by CBED of TEM and CAICISS," M. Imura, U. Gautam, T. Ohnishi, M. Sumiya, K. Nakajima, M. Y. Liao, Y. Koide, H. Amano, and M. Lippmaa. 36th International Symposium on Compound Semiconductors (ISCS 2009) August 30-September 2, 2009, (Santa Barbara, CA, USA).
  89. "Photocurrent gain dependence on deep-ultraviolet intensity in diamond detector," M.Y. Liao, X. Wang, T. Teraji, S. Koizumi, Y. Koide, The 20th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2009) September 6-10, 2009, (Athens, Greece).
  90. Oral, "Low reverse‐current diamond Schottky diodes prepared by VUV/ozone treatment," Session 8A (Focus Session) - Devices O30 ‐, T. Teraji, Y. Garino, Y. Koide, T. Ito. The 20th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2009) September 6-10, 2009, (Athens, Greece).
  91. "Fabrication of super-hydrophobic surface for blood-contacting medical device," Asian-European International Conference on Plasma Surface Engineering 2009 (AEPSE2009), September 20-25, 2009, (Busan, Korea), Y. Kashiwagi, T. Hasebe, D. Tsuya, M. Ochiai, N. Ikeda, Y. Sugimoto, Y. Koide, H. Terada, and T. Suzuki.
  92. Oral, "Engineering The Photoresponse Properties of Diamond Deep-Ultraviolet Detectors," IUPAC 5th International Symposium on Novel Materials and Synthesis (NMS-V) & 19th International Symposium on Fine Chemistry and Functional Polymers (FCFP-XIX), 18-22 October, 2009, (Shanghai, China), M.Y. Liao, J. Alvarez, M. Imura, and Y. Koide.
  93. Oral, "Integration of Pb (Ti0.52Zr0.48)O3 on Single Crystal Diamond." 2009 MRS Fall Meeting, J. Diamond Electronics and Bioelectronics--Fundamentals to Applications III, J4.4. November 30 -December 4, 2009 (Boston, USA), M. Y. Liao, K. Nakajima, M. Imura, and Y. Koide.
  94. Invited Talk 14, "Diamond UV detectors and sensing mechanism," Hasselt Diamond Workshop 2010, SBDD XV, February 22-24,  2010, Cultuurcentrum Hasselt (Cultural Centre), (Hasselt, Belgium). Session 11, 11.1, Y. Koide, M.Y. Liao, M. Imura, J. Alvarez, J-P. Kleider.
  95. Invited Talk 15, "Deep-Dopant Effect for Diamond Electronic and Photonic Devices," NDNC2010, May 16-19, 2010, Garden Hotel, (Suzhou, China). Session A11, Y. Koide.
  96. “Growth of AlN on (001), (110), and (111) diamond substrates,” The 4th International Conference on New Diamond and Nano Carbons (NDNC2010), Garden hotel, 2010, (Suzhou, China), P160, M. Imura, K. Nakajima, M. Liao, Y. Koide, and H. Amano.
  97. Invited talk 16, "Bridging wide bandgap nanowires for ultraviolet light detection," J.-J Delaunay, Y. B. Li, T. Tokizono, M. Liao, M. Zhong, Y. Koide and I. Yamada, 20th MRS Japan Conference, Session E, December 20-21, 2010, Yokohama.
  98. "Contact Resistance in Graphene-Based Devices by Transmission Line Method," EiichiroWatanabe, DaijuTsuya and Yasuo Koide, Frontiers in Nanoscale Science and Technology Workshop 2011, January 5-7, 2011 RIKEN Wako Campus, Wako, Japan.
  99. "Demonstration of AlN/Diamond Heterostructure Field Effect Transistors," Masataka Imura, Ryoma Hayakawa, Hirotaka, Oosato, Eiichiro Watanabe, Daiju, Tsuya, Meiyong Liao, Yasuo Koide, and Hiroshi Amano, MANA International Symposium 2011, March 2-4, 2011, Tsukuba, Japan.
  100. Best Presentation Award, Oral, "Diamond Field Effect Transistors by AlN/Diamond Heterostructure," The 5th International Conference on New Diamond and Nano Carbons (NDNC2011), Kunibiki-Messe, May 16-20, 2011, (Matsue, Japan), M. Imura, R. Hayakawa, E . Watanabe, H. Oosato, M . Liao, Y. Koide, H. Amano.
  101. Oral, "Nanoelectromechanical switch fabricated from single crystal diamond," The 5th International Conference on New Diamond and Nano Carbons (NDNC2011), Kunibiki-Messe, May 16-20, 2011, (Matsue, Japan), M. Liao, S. Hishita, S. Koizumi, Y. Koide.
  102. Oral, "Low Resistance Ti/Au Ohmic Contact for Graphene," Eiichiro Watanabe, Arolyn Conwill, Daiju Tsuya, and Yasuo Koide, The 5th International Conference on New Diamond and Nano Carbons (NDNC2011), Kunibiki-Messe, May 16-20, 2011, (Matsue, Japan)
  103. "Modeling and simulation of single crystal diamond NEMS switch," M. Liao, Z. Rong, Y. Koide, M. Imura, The 5th International Conference on New Diamond and Nano Carbons (NDNC2011), Kunibiki-Messe, May 16-20, 2011, (Matsue, Japan)
  104. Oral, "Nanoelectromechanical switches on diamond-on-diamond," M.Y. Liao, S. Hishita, and Y. Koide, The 16th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS’11), (Beijing, China), June 5-9, 2011.
  105. Oral, "Amorphous and microcrystalline silicon diamond based heterojunctions," M. Boutchich, J. Alvarez, D. Diouf, P-R. Cabarrocas, M. Y. Liao, M. Imura, Y. Koide, and J-P. Kleider. 24th International Conference for Amorphous and Nanocrystalline Semiconductors, (ICANS24), August 21-26, 2011, (Nara, Japan).
  106. Oral, "Development of Diamond Field Effect Transistors by AlN/Diamond Heterostructure," M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Liao, Y. Koide, and H. Amano, 22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2011), September 4-8, 2011, Garmisch-Partenkirchen , Germany.
  107. Invited Talk 17, "Deep-Dopant Effect for Diamond Ultraviolet Sensor," ECI Carbon-based Nanomaterials and Devices, Oct. 17-22, 2011, (Suzhou, China), Y. Koide
  108. Oral, "Low-power consumption diamond nanoelecromechanical switch," M. Y. Liao, S. Hishita, Y. Koide, IUPAC 7th International Conference on Novel Materials and Synthesis (NMS-VII) & 21st International Symposium on Fine Chemistry and Functional Polymers (FCFP-XXI), 16-21 October, 2011 (Shanghai, China).
  109. Oral, "Challenge for Development of Diamond Electronic and Optical Devices," Y. Koide, Nano-S&T, A Dedicated Event for Nanoscience and Nanotechnology Professionals, October 23-26, 2011, World EXPO Center, (Dalian, China).
  110. Invited Talk 18, "Diamond MEMS/NEMS for harsh environments," M.Y. Liao, S. Hishita, S. Koizumi, M. Imura, Y. Koide, NanoThailand 2012 Conference, April 9-11, 2012, (Khon Kaen, Thailand).
  111. Oral, "Single Crystal Diamond MEMS/NEMS: Surface Machining, Devices, and simulation," M. Y. Liao, L. Sang, M. Imura, N. Ikeda, S. Hishida, Y. Koide, A1.4, 2012 New Diamond and Nano Carbons Conference (NDNC2012), May 20-24, 2011, Conrad San Juan Condado Plaza, (San Juan, Purerto Rico).
  112. Oral, "Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling," Y. Koide, G. G. Chen, M. Y. Liao, M. Imura, E2.1, 2012 New Diamond and Nano Carbons Conference (NDNC2012), May 20-24, 2011, Conrad San Juan Condado Plaza, (San Juan, Purerto Rico).
  113. Invited Talk 19, "Filed effect transistors by AlN/diamond heterostructure -past and future-," M. Imura, R. Hayakawa, H. Ohstao, E. Watanabe, D. Tsuya, M. Y. Liao, and Y. Koide, H. Amano, SBDD XVII, March 14-16, 2012, (Hasselt, Belgium)
  114. Invited Talk 20, "Challenge for Development of Diamond Electronic and Optical Devices for Energy Saving," Y. Koide, The 9th Asia Nano Forum Summit (ANFoS 2012), Green Nanotechnology Session, August 21-24, 2012, (Bangkok, Thailand)
  115. Invited Talk 21,"Single crystal diamond MEMS/NEMS devices," M. Y. Liao, S. Hishita, S. Koizumi, L. W. Sang, M. Imura, and Y. Koide, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), September 4, IS10, 11:00-11:30, Sept. 3-6, 2012, (Granada, Spain).
  116. Oral, "Thermally-stable tungsten carbide/p-diamond Schottky diodes," T. Teraji, M.Y. Liao, Y. Koide, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), Diamond Devices B, September 5, O43, 9:30-10:30, Sept. 3-6, 2012, (Granada, Spain).
  117. Oral, "Electrical transport mechanism of field effect transistors by ALN/diamond heterostructure," M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Meiyong, Y. Koide, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), Diamond Devices B, September 5, O44, 9:30-10:30, Sept. 3-6, 2012, (Granada, Spain).
  118. Oral, "High-k insulator/p-diamond structure for gate voltage controlling," Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), Diamond Devices C, September 5, O52, 14:00-15:30, Sept. 3-6, 2012, (Granada, Spain).
  119. "Ta2O5 film on diamond for high power MOSFET," S.H. Cheng, L.W. Sang, M.Y. Liao, M. Imura, Y. Koide, International Conference on Diamond and Carbon Mateirals (ICDCM 2012), Diamond applications: electronic devices, September 3, P1.48, Sept. 3-6, 2012, (Granada, Spain).
  120. Invited Talk 22, "Diamond-FET using AlN/diamond heterojunction,"M. Imura, M. Y. Liao, Y. Koide, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-2 Wide Bandgap Semiconductors, B-2-I28-001, September 23-28, 2012, (Yokohama, Japan).
  121. Oral, "Strategies to develop single crystal diamond deep-ultraviolet detectors," M. Y. Liao, M. Imura, Y. Koide, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-8 Diamond and Related Materials and its Applications, B-8-O25-003, September 23-28, 2012, (Yokohama, Japan).
  122. Oral, "High dielectric constant oxide on diamond for high power devices,"S. Cheng, M. Y. Liao, M. Imura, Y. Koide, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-8 Diamond and Related Materials and its Applications, B-8-O25-015, September 23-28, 2012, (Yokohama, Japan).
  123. Oral, "Electrical property of high-k insulator/p-diamond diodes for electric field controlling," Y. Koide, G. C. Chen, M. Y. Liao, M. Imura, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-8 Diamond and Related Materials and its Applications, B-8-O25-016, September 23-28, 2012, (Yokohama, Japan).
  124. "Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere," M. Imura, M. Y. Liao, Y. Koide, International Union of Materials Research Societies - International Conference on Electronic Materials 2012, (IUMRS-ICEM 2012), B-8 Diamond and Related Materials and its Applications, B-8-P25-027, September 23-28, 2012, (Yokohama, Japan).
  125. Invited Talk 23, "Challenge to Development of Diamond Power Devices for Energy Saving," Y. Koide, Ineternational Conference on Emerging Advanced Nanomaterials (ICEAN-2012), October 22-25, (Brisbane, Australia).
  126. "Effective use of methane for isotopic enriched diamond growth," T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, Hasselt Diamond Workshop 2013, SBDD XVIII, February 27?March 1, 2013, cultuurcentrum Hasselt (Cultural Centre), (Hasselt, Belgium).
  127. "Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy," J. W. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide, New Diamond and Nano Carbons Conference (NDNC 2013), May 19-23, 2013, (Novotel Singapore Clarke Quay, Singapole).
  128. Oral, "Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes," J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, New Diamond and Nano Carbons Conference (NDNC 2013), May 19-23, 2013, (Novotel Singapore Clarke Quay, Singapole).
  129. "Single crystal diamond MEMS/NEMS: surface micromachining," M. Y. Liao, L. Sang, N. Ikeda, D. Tsuya, M. Imura, and Y. Koide, New Diamond and Nano Carbons Conference (NDNC 2013), May 19-23, 2013, (Novotel Singapore Clarke Quay, Singapole).
  130. Invited Talk 24, "Challenge to Develop Diamond Electronic and Photonic Devices for Energy Saving," Y. Koide, The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013). Oral Session B3 (Inorganic Electronics) B3-1, June 17-20, 2013 (Kanazawa, Japan).
  131. Invited Talk 25, "Diamond Heterojunction and High-k Dielectric Gate FETs," Y. Koide, The 1st French-Japanese workshop on diamond power devices, June 17-18, 2013, (Chanomix, France).
  132. Invited Talk 26, "Challenge to Development of Diamond Power Devices for Saving Energy," Y. Koide, The 8th Pacific Rim International Congress on Materials and Processing (PRICM 8), August 4-9, 2013, Thursday AM, Symposium: H. Rare Earth, Electronic, and Magnetic Materials, (Waikoloa, Hawaii USA).
  133. Oral, "Diamond Field Effect Transistors using Al2O3 Insulator/Surface p-Channel Diamond Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere," M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. Liu, M. Y. Liao, Y. Koide, H. Amano, International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013), September 2-5, (Riva del Garda, Italy).
  134. "Inhomogeneous Schottky barrier height at metal/diamond interfaces," T. Teraji, A. Fiori, and Y. Koide, International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013), September 2-5, (Riva del Garda, Italy).
  135. Oral, "Effective use of source gas for isotpically-enriched diamond growth," T. Teraji, T. Taniguchi, K. Watanabe, S. Koizumi, Y. Koide , and J. Isoya, International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013), September 2-5, (Riva del Garda, Italy).
  136. Invited Talk 27, "Diamond heterojunction and high-k Dielectric FETs," Y. Koide, IEEE Nano Materials and Devices Conference (IEEE-NMDC 2013), Oct. 6-9, 2013 (Tainan, Taiwan).
  137. “Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond,” J. Liu, L. Meiyong, M. Imura, H. Oosato, E. Watanabe, Y. Koide, New Diamond and Nano Carbons Conference (NDNC 2014), May 24-29, (Chicago, Ilinois USA).
  138. Oral, “Fabrication of low on-resistance diamond field effect transistors,” J. Liu, L. Meiyong, M. Imura, Y. Koide, New Diamond and Nano Carbons Conference (NDNC 2014),May 24-29, (Chicago, Ilinois USA).
  139. Oral, “Frequency dispersion properties at All2O3 and HfO2/H-terminated diamond interfaces,” Y. Koide, J. Liu, L. Meiyong, M. Imura, H. Oosato, E. Watanabe, New Diamond and Nano Carbons Conference (NDNC 2014),May 24-29, (Chicago, Ilinois USA).
  140. Oral, “Diamond metal-insulator-semiconductor field effect transistor logic inverters” J. Liu, L. Meiyong, M. Imura, Y. Koide, 2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014), June 12-17, 2014 (Xi'an, China).
  141. Invited Talk 28, "Diamond Electronic and Photonic Devices," Y. Koide, 2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014), June 12-17, 2014 (Xi'an, China).
  142. “Multilevel intermediate-band solar cell based on III-Nitrides,” S. Liwen, L. Meiyong, Y. Koide, M. Sumiya, The International Workshop on Nitride Semiconductors (IWN 2014), August 24-29, 2014 (Wroc?aw, Poland).
  143. Oral, “HfO2 on hydrogenated-diamond for field effect transistors,” J. Liu, L. Meiyong, M. Imura, Y. Koide, IUMRS-ICA 2014, August 24-30, 2014 (Yokohama, Japan).
  144. Invited Talk 29, "Diamond Field Effect Transistors with high-k gate insulator," Y. Koide, International Materials Research Congress (IMRC 2014), August 17-21, 2014 (Cancun, Mexico).
  145. Invited Talk 30, "Diamond FETs with high-k oxide gate dielectrics," Y. Koide, International Conference on Diamond and Carbon Materials (ICDCM 2014), September 8-11, 2014 (Madrid, Spain).
  146. “High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication,” J. Liu, L. Meiyong, M. Imura, Y. Koide, International Conference on Diamond and Carbon Materials (ICDCM 2014), September 8-11, 2014 (Madrid, Spain).
  147. Oral, “Schottky-Barrier Inhomogeneities in WC/p-diamond at High Temperature,” A. Fiori, T. Teraji, Y. Koide, International Conference on Solid State Devices and Materials 2014 (SSDM 2014), September 8-11, 2014 (Tsukuba, Japan).
  148. Invited Talk 31, "Diamond Electronic Devices for Future Application," Y. Koide, 2014 Asia-Pacific Microwave Conference (APMC 2014), November 4-7, 2014 (Sendai, Japan).
  149. Invited Talk 32, "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, European Microwave Integrated Circuit Conferece (EUMIC 2014), October 5-10, 2014 (Rome, Italy).
  150. Oral, “Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor,” J. Liu, L. Meiyong, M. Imura, Y. Koide, BIT'S 4th Annual World Congress of Nano Science & Technology 2014, Ocotber 29-31, 2014 (Qingdao, China).
  151. Oral, “Thermally Stable p-Diamond Schottky Barrier Diodes at 600 K,” A. Fiori, T. Teraji, Y. Koide, 2014 MRS Fall Meeting & Exhibition, November 30 - December 5, 2014 (Boston, MI USA).
  152. Oral, “Influence of the surface termination on the ideality of diamond Schottky diodes,” A. Fiori, T. Teraji, Jose Pinero, Daniel Araujo, Y. Koide, Hasselt Diamond Workshop 2015 SBDD XX, Feburay 24-27, 2015 (Hasselt Belgium).
  153. “Atomic Layer Deposited High-k Insulators on Hydrogenated-diamond for Field Effect Transistors” J. LIU, L. Meiyong, M. Imura, Y. Koide, MANA International Symposium 2015, March 11-13, 2015.
  154. Invited Talk 33, "High-k Oxide Gate Diamond FETs," Y. Koide, 2015 MRS Spring Meeting, Session CC, April 6-10, 2015, (SanFrancisco, USA).
  155. Invited Talk 34, "Diamond FETs using heterojunction and high-k dielectrics," Y. Koide, J-W. Liu, M. Imura, and M-Y. Liao, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2015) / 8th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2015), March 26-31, 2015 (Nagoya, Japan)
  156. Oral, “Hydrogenated-diamond MISFET logic inverter,” J. LIU, L. Meiyong, M. Imura, Y. Koide, 9th International Conference on New Diamond and Nano Carbons (NDNC 2015), May 24-28, 2015 (Sizuoka Japan).
  157. “Impedance Spectroscopy of Diamond MOS Structure,” M-Y. Liao, J. Liu, S. Liwen, D. Coatchup, J-L Li, M. Imura, H. Ye, Y. Koide, The 9th International Conference on New Diamonds and Nano Carbon (NDNC2015), May 24-28, 2015 (Sizuoka Japan).
  158. Plenary Talk 35, "III-Nitrides and Diamond Devices," Y. Koide, 2015 International Symposium on Single Crystal Diamond and Electronics (2015 SCDE), June 12-14, 2015, Xi'an Jiantong University, (Xi'an, Chaina)
  159. Invited Talk 36, "Diamond Field Effect Transisot, Deep-UV sensor, and MEMS Devices," Y. Koide, 2015 Collaborative Conference on 3D & Materials Research (2015 CC3DMR), June 15 - 19, 2015, BEXCO, (Busan, South Korea)
  160. Invited Talk 37, "E and D-modes Diamond MOSFETs," Y. Koide, OMNT, International Symposium on Diamond, Elavolation, Devices and Applications. July 6, 2015, CNRS, Amphiltheater, (Grenoble France)
  161. Invited Talk 38, "H-Diamond MOSFETs with high-k oxide gate," Y. Koide, 3rd French-Japanese Workshop on Diamond Power Devices, July 7-10 2015, C-Suites Hotel, (Niems France)
  162. Oral, “Oxycarbide Formation for Ideal and Thermally Stable Diamond Schottky-barrier Diodes,” A.J-Y. Fiori, T. Teraji, Y. Koide, 3rd - French-Japanese workshop on diamond power devices, July 7-10 2015, C-Suites Hotel, (Niems France)
  163. Oral, “Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs” Y. Koide, M. Imura, J. Liu, L. Meiyong, R. Banal, M. Takao, S. Naoya, I. Yuichi : International Conference on Diamond and Carbon Materials 2015 (ICDCM 2015), September 6-12, (Badhomberg Germany).
  164. “Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate” R. Banal, M. Imura, Y. Koide, The 6th International Symposium on Growth of III-Nitrides (ISGN6), November 8-13, 2015 (Hamamatsu Japan).
  165. Invited Talk 39, "Diamond MOSFETs with high-k gate oxides," Y. Koide, 2015 MRS Fall Meeting, Symposium DD, Electronic Devices II : DD13.01, November 30-December 3, 2015, Hynes Convention Center, (Boston USA)
  166. Oral, “Impedance Analysis of Hydrogen-Terminated Diamond MOS Structure,”M-Y. Liao, J. Liu, S. Liwen, D. Coatchup, J-L. Li, M. Imura, Y. Koide, H. Ye : 2015 MRS Fall Meeting, Electronic Devices II, November 30-December 3, 2015, Hynes Convention Center, (Boston USA).
  167. “Enhancement mode hydrogenated diamond MISFETs,” J. LIU, L. Meiyong, M. Imura, Y. Koide : 2016/03/09-11, MANA International Symposium 2016
  168. “Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces,” E. Verveniotis, Y. Okawa, M. Marina Vadimovna, Y. Koide, J. Liu, B. Smid, K. Watanabe, T. Taniguchi, K. Komatsu, C. Joachim, M. Aono, 2016/03/09-11, MANA International Symposium 2016
  169. Oral, “High-k oxide gated diamond field effect transistor,” J. LIU, L. Meiyong, M. Imura, Y. Koide : 2016/03/04-06, WCSM-2016
  170. “Fabrication of Normally Off Diamond Metal-insulator-semiconductor field-effect transistors,” J. LIU, L. Meiyong, M. Imura, Y. Koide : 2016/01/20-22, ICYS Workshop 2016
  171. Oral, “Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces,” E. Verveniotis, Y. Okawa, M. Marina Vadimovna, Y. Koide, J. Liu, B. Smid, K. Watanabe, T. Taniguchi, K. Komatsu, C. Joachim, M. Aono, : May 9-12, 2016 E-MRS Spring Meeting and Exhibit.
  172. “Microscopically charged synthetic diamond as a functional interface for self-assembly of nanoparticles,” E. Verveniotis, J. C., Y. Okawa, Y. Koide, A. K., B. R. : May 9-12, 2016 E-MRS Spring Meeting and Exhibit .
  173. Plenary Talk 40, "Wide Bandgap III-Nitride and Diamond Materials and Devices," Y. Koide, 10th International Conference on New Diamond and Nano Carbons (NDNC2016), May 22-27, 2016, (Xi'an, China).
  174. Oral, “High-k TiO2 on Diamond for Electronic Devices: Capacitor Field-effect Transistor and Logic Inverter,” J. LIU, L. Meiyong, M. Imura, R. Banal, Y. Koide : 10th International Conference on New Diamond and Nano Carbons (NDNC2016), May 22-27, 2016, (Xi'an, China).
  175. Oral, “Single Crystal Diamond Micromechanical and Nanomechanical Resonators,” M.W. Liao, M Toda, S. Liwen, S. Hishita, M. Imura, S Tanaka, Y. Koide : The 10th International Conference on New Diamond and Nano Carbon (NDNC2016), May 22-27, 2016, (Xi'an, China).
  176. Invited Talk 41, "Wide Bandgap III-Nitride and Diamond Materials and Devices," Y. Koide, 9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9), August 1-5, 2016, (Kyoto, Japan).
  177. “Displacement Current of Au/p-type Diamond Schottky Contacts,” T. Aoki, T. Teraji, Y. Koide, K. Shiojima : 2016/06/07-11, ISCSI-VII/ISTDM2016.
  178. "Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces,” 2016/08/08-11 : E. Verveniotis, Y. Okawa, M. Marina Vadimovna, Y. Koide, J. Liu, B. Smid, K. Watanabe, T. Taniguchi, K. Komatsu, C. Joachim, M. Aono, August 8-11, 2016, AFM Conference 2016
  179. "Microscopically charged synthetic diamond as a functional interface for self-assembly of nanoparticles,” E. Verveniotis, J. C., Y. Okawa, Y. Koide, A. K., B. R. :August 8-11, 2016, AFM Conference 2016
  180. Oral, "Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors," R.G. Banal, M. Imura, J. Liu, M. Liao, and Y. Koide, International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016), September 4-7, (Montpelier, France).
  181. Oral, "Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE," M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y. Koide , T. Matsumoto, N. Shibata, Y. Ikuhara,International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016), September 4-7, (Montpelier, France).
  182. “Synthetic diamond thin films for electronics: functionalization electronic transport and possible applications,” E. Verveniotis, CERMAK Jan, Y. Okawa, Y. Koide, KROMKA Alexander, LEDINSKY Martin, C. Joachim, REZEK Bohuslav : 2016/10/09-13, 6th International Symposium on Transparent Conductive Materials
  183. “Recent Developments in Diamond MOSFET Electronic Devices,” J. Liu, L. Meiyong, M. Imura, Y. Koide : 2016/10/06-07 ICYS Workshop FY2016
  184. “InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas,” K. Zhang, M. Sumiya, L. Meiyong, Y. Koide, S. Liwen : 2016/10/02-07, International Workshop on Nitride Semiconductors (IWN 2016).
  185. Invited Talk 42, "Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere." M. Imura, R. Banal, J. Liu, M. Liao, Y. Koide, Hasselt Diamond Workshop March 8-10, 2017 - (SBDD XXII 2017). (Hasselt, Belgium)
  186. Oral, "High-current triple-gate H-diamond MOSFET." Y. Koide, J. Liu, M. Liao, M. Imura, The 11th Conference on New Diamond and Nano Carbon Conference, (NDNC 2017). May 22-25, 2017. (Fragstaff, USA)
  187. Oral, "Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111)." M. Imura, R. Banal, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide, The 11th Conference on New Diamond and Nano Carbons (NDNC 2017). 2017 May 22-25, 2017. (Fragstaff, USA)
  188. Invited Talk 43, "Homoepitaxial chemical vapor deposition of diamond film for ultra-light doping." T. Teraji, J. Isoya, S. Koizumi, Y. Koide, The 11th International Conference on New Diamond and Nano Carbon (NDNC 2017), May 22-25, 2017. (Fragstaff, USA)
  189. Invited Talk 44, "D/E-mode control of diamond FETs and logic circuit demonstration," Y. Koide, 2017 International Symposium on Single Crystal Diamond and Electronics (2017 SCDE), June 11-12, 2017, Xi'an Jiantong University, (Xi'an, Chaina)
  190. "Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy." M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kanek, K. Wang, T. Araki, Y. Nanishi. 12th International Conference on Nitride Semiconductors (ICNS 2012). July 24-28, 2017 (Strasbourg, France)
  191. Oral, "Diamond logic circuits with depletion- and enhancement-mode MOSFETs." J. Liu, H. Osato, M. Liao, M. Imura, E. Watanabe, Y. Koide, 29th International Conference on Defects in Semiconductors (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  192. Oral, "The influence of interface states on the CaF2/p-GaN metal-insulator-semiconductor capacitors." L. Sang, M. Liao, M. Sumiya, Y. Koide, International Conference on Defects in Semiconductors (ICDS 2017). July 31- August 4, 2017 (Matsue Japan).
  193. "Strain and dislocations in the InGaN-based intermediate-band solar cel ls," L. Sang, M. Liao, M. Sumiya, Y. Koide, International Conference on Defects in Semiconductors. (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  194. Oral, "The influence of interface states on the CaF2/p-GaN metal-insulator-semiconductor capacitors." L. Sang, M. Liao, M. Sumiya, "Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy," M. Imura, Y. Ota, R. Banal, Y. Koide , 29th International Conference on Defects in Semiconductors. (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  195. "Effect of surface hydrogen termination on the interface electronic properties of TiO2/diamond heterostructure." K. Wu, L. Sang, M. Imura, Y. Koide, M. Liao, The 29th International Conference on Defects in Semiconductors. (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  196. Oral, "Interface states governed photoelectrical properties of diamond deep-ultraviolet detector," M. Liao, L. Sang, M. Imura, Y. Koide , The 29th International Conference on Defects in Semiconductors. (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  197. Oral, "Mechanism of photoconductivity gain and persistent photoconductivity for diamond Deep-Ultraviolet photodetector," Y. Koide, M. Liao, M. Imura, 29th International Conference on Defects in Semiconductors. (ICDS 2017 ) July 31- August 4, 2017 (Matsue Japan).
  198. "Fixed Charge and Trap States in Ni/Al2O3/GaN MIS Schottky Barrier Diodes for Power Device." B. Ren, M. Liao, M. Sumiya, Y. Koide , L. Sang, 29th International Conference on Defects in Semiconductors. (ICDS 2017) July 31- August 4, 2017 (Matsue Japan).
  199. "Updates on Nanotechnology Development in Japan 2016-2017," Y. Koide, 14th Asia Nano Forum Summit (ANFOS 2017), August 23-25, 2017 (Johor Bahru, Malasia)
  200. Invited Talk 45, "Normally-on/off control of diamond FETs and logic circuit demonstration," Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao, E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland) Sept. 19, 2017
  201. Invited Talk 46, "Development of normally-on/off diamond MOSFETs and logic circuits," Y. Koide, Schulich Symposium, Diamond: From fundamental properties to quantum technologies, Schulich faculty of Chemistry, Technion - Israel Institute of Technology, September 16-18, 2017, (Haifa, Israel).
  202. "Surface effect and improvement of the quality factor of single crystal diamond NEMS resonators," M. Liao, H. Wu, L. Sang, T. Teraji, M. Imura, Y. Koide, 28th International Conference on Diamond and Carbon Materials. (ICDCM 2017) September 3-7, 2017 (Gotenburg, Sweden)
  203. "Fabrication of triple-gate hydrogenated diamond MOSFETs," J. Liu, H. Osato, X, Wang, M. Liao, Y. Koide, International Conference on Diamond and Carbon Materials (ICDCM 2017) September 3-7, 2017 (Gotenburg, Sweden)
  204. Oral, "Logic circuits with hydrogenated diamond MOSFETs," J. Liu, M. Liao, M. Imura, Y. Koide, International Conference on Diamond and Carbon Materials (ICDCM 2017) September 3-7, 2017 (Gotenburg, Sweden)
  205. "Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3," M. Imura, R. Banal, J. Liu, M. Liao, Y. Koide, 28th International Conference on Diamond and Carbon Materials. (ICDCM 2017) September 3-7, 2017 (Gotenburg, Sweden)
  206. Invited Talk 47, "Semiconductor diamond: from fundamental to applications," .M. Liao, Y. Koide, The 8th Asia-Pacific Workshop on Widegap Semiconductors. (APWS 2017) September 25-27, 2017 (Qindao, China)
  207. "Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron," M. Imura, R. Banal, Y. Koide, Y. Nakayama, M Takeguchi, T. Shunsuke , T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, H. Amano, The 11th International Symposium on Semiconductor Light Emitting. 2017
  208. "Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp," M. Imura, M. Liao, Y. Koide,. International Workshop on UV Materials and Devices 2017 (IWUMD 2017). November 14-18, 2017 (Fukuoka Japan).
  209. "Electronic and optical properties of BAlN," Y. Ota, M Imura, R. Banal, Y. Koide, International Workshop on UV Materials and Devices 2017. (IWUMD 2017). November 14-18, 2017 (Fukuoka Japan).
  210. Oral, "III-nitride/diamond hybrid systems," M. Imura, M. Liao, Y. Koide, 3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN. 2017
  211. Oral, "Microstructure and electrical property of AlN/Diamond(111) heterojunction," M. Imura, M. Liao, Y. Koide, OIST Diamond WS (ODW 2017), October 29 - November 1, 2017, (Okinawa, Japan).
  212. Oral, "Depletion/Enhancement-modes control of H-diamond MOSFETs." Y. Koide, OIST Diamond WS (ODW 2017), October 29 - November 1, 2017. (Okinawa, Japan)
  213. Oral, "Ultra-high quality factor single crystal diamond MEMS resonators." M. Liao, H. Wu, L. Sang, T. Tokuyuki, Y. Koide, OIST Diamond WS (ODW 2017), October 29 - November 1, 2017. (Okinawa, Japan)
  214. Oral, "Magnetic Control of Electric Double Layer Transistor," T. Tsuchiya, M. Imura, Y. Koide, K Terabe, MANA International Symposium 2018. March 5-7, 2018 (Tsukuba, Japan).
  215. Oral, "III-nitride/diamond heterojunction," M. Imura, M. Liao, Y. Koide, 4th JST Sakura Science Workshop. 2018
  216. Oral, "Single crystal diamond MEMS: Concpet, Fabrication, and Applications," M. Liao, Y. Koide, International Conference on Expanding Frontiers of Carbon MEMS (CMEMS 2018). June 10-12, 2018 (San Diego, USA)
  217. Oral, "Role of a native oxide interlayer on electrical characteristics of Al2O3/n-GaN capacitors," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, L. Sang, T. Ohishi, Y. Koide, 9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy andHeterostructures (ICSI), Joint ISTDM/ISCI 2018 Conference, May 27-31, 2018 (Potsdam, Germany)
  218. Oral, "Logic circuits using depletion/Enhancement-modes H-diamond MOSFETs," Y. Koide, J. Liu, M. Imura, M. Liao, 12th New Diamond and Nano Carbons Conference (NDNC 2018). May 21-25, 2018 (Flagstaff, USA)
  219. Invited Talk 48, "High-quality diamond epitaxial layer growth and electron devices application," Y. Koide, J. Liu, M. Imura, M. Liao, International Conference on Solid State Devices and Materials (SSDM 2018). September 9-13, 2018 (Tokyo, Japan).
  220. Oral, "Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement," K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, S. Liwen, Y. Koide, T. Ohishi, International Conference on Solid State Devices and Materials (SSDM 2018). September 9-13, 2018 (Tokyo, Japan).
  221. Invited Talk 49, "Enhancement-mode hydrogenated diamond MOSFETs," J. Liu, M. Liao, M. Imura, Y. Koide, 29th International Conference on Diamond and Carbon Materials. (ICDCM 2018) September 2-6, 2018. (Dubrovnik, Croatia)
  222. Oral, “Band alignment of wurtzite BN related alloys,” U. Ohuta, M. Imura, R. Banal, Y. Koide, International Workshop on Nitride Semiconductors 2018 (IWN2018), November 11-16, (Kanazawa, Japan).
  223. “Oral, Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography,” KIM, Jaemyung, SEO, Okkyun, SONG, ChulHo, HIROI, Satoshi, CHEN, Yanna, IROKAWA, Yoshihiro, NABATAME, Toshihide, KOIDE, Yasuo, SAKATA, Osami, International Workshop on Nitride Semiconductors 2018 (IWN2018), November 11-16, (Kanazawa, Japan).
  224.  Oral, “Comprehensive Study of Native Oxides on GaN(0001),” Y. Irokawa, K. Mitsuishi, T. Suzuki, K. Yuge,A. Ohi, T. Nabatame, T. Ohnishi, K. Kimoto, Y. Koide, International Workshop on Nitride Semiconductors 2018 (IWN2018), November 11-16, (Kanazawa, Japan).
  225. “Oral, Crystalline intermediate layers in oxides/GaN(0001),” Y. Irokawa, K. Mitsuishi, T. Nabatame, K. Kimoto, and Y. Koide, International Workshop on Nitride Semiconductors 2018 (IWN2018), November 11-16, (Kanazawa, Japan).
  226. Oral, “Study of high-k gate insulator for GaN power device by atomic layer deposition,” T. Nabatame, Y. Irokawa, K. Shiozaki, Y. Koide, 31st International Microprocesses and Nanotechnology Conference,
  227. Oral, “Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy,” M. Imura, T. Tsuda, T. Nagata, R. Banal, H. Yoshikawa, A. Yang, R. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, Y. Nanishi, International Workshop on Nitride Semiconductors 2018 (IWN2018), November 11-16, (Kanazawa, Japan).
  228. Invited Talk 50, "Development of AlN/Diamond heterostructure formation and unique interface property," M. Imura, M. Liao, and Y. Koide, European Materials Research Society (EMRS) 2018 Fall Meeting, Diamond Electronic Devices III, (Warsaw, Poland) September 17-20, 2018.
  229. Invited Talk 51, J.W. Liu, Y. Koide, "Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits,“4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap　Semiconductors) (Crete Greece) Oct. 14-19, 2018.
  230. Invited Talk 52, "Electrical properties of H-terminated diamond FETs with AlN gate," Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao, 4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap Semiconductors) (Crete Greece) Oct. 14-19, 2018.
  231. Invited Talk 53, "Wide Bandgap III-Nitride and Diamond Devices and Characterization," Y. Koide, 32nd IEEE International Conference on Microelectronic Test Structures, (ICMTS Conference), (Kita-Kyushu City, Japan) March 18-21, 2019.
  232. Invited Talk 54, "Advanced diamond FET and MEMS devices," Y. Koide, 2017 International Symposium on Single Crystal Diamond and Electronics (SCDE2019), June 10-12, 2019,　(Xi'an, China)
  233. Invited Talk 55, "Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics," O. Auciello, Elida de Obaldi, Jiangwei Liu, Y. Koide, Geunhee Lee, The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019), May 12-17, 2019, (Hualien, Taiwan)

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