ZnSe−論文(10)−

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  1. "Dependence of electrical properties on work functions of metals contacting to p-type ZnSe." Jpn. J. Appl. Phys. vol. 78, No.5, p.1657-1663, March, 1996. O. Tadanaga, Y. Koide, K. Hashimoto, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki. and M. Murakami
  2. "Cd-based Ohmic Contact Materials to p-type ZnSe." J. Crystal Growth, vol. 159, p.709-713, April, 1996. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  3. "Surface cleaning effect of electrical porperties on Ni contacting to p-type ZnSe." J. Vac. Sci. & Tech. B, vol. 14, No. 3, p. 1812-1818, June, 1996. H. Ishikawa, K. Tsukui, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  4. "Cd and Te based Ohmic Contact Materials to p-type ZnSe." J. Electronic Materials, vol. 25, No. 12, p. 1823-1831, December, 1996. K. Hashimoto, Y. Koide, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  5. "Schottky barriers of metals contacting to p-type ZnSe." J. Appl. Phys., vol. 82, No. 9. p. 2393-2470, September 1, 1997, Important paper. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  6. "Schottky barrier heights of contact metals to p-ZnSe." J. Electronic Materials, vol. 27, No. 6, June, p.772-775, 1998. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  7. "Effects of intermediate layers on carrier transport mechanisms through p-ZnSe/metals interfeaces." J. Electronic Materials, vol. 27, No. 8, August , p.998-1002, 1998, Important paper. T. Kagawa, Y. Koide, T. Oku, H. Mori, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  8. "Electrical properties at p-ZnSe/metals interfaces." J. Electronic Materials, vol. 27, No. 8, August , p.929-935, 1998, Important paper. T. Kawakami, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  9. "Electrical properties of p-ZnSe/metals interfaces with intermediate semiconductor layers", The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2519-2524, 1998. Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
  10. "Electrical properties at p-ZnSe/metal interfaces of annealed contacts", The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2525-2530, 1998. T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki

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−国際会議発表(5)−

  1. "Cd-based Ohmic Contact Materials to p-type ZnSe". 7th Int. Conf. on II-VI Compound Semiconductors and Devises, Edingburgh (UK), Abst. Fr9, August 12 - 17, 1995. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  2. "Ohmic contacts to wide gap compound semiconductors.", The 192nd Meeting of The Electrochemical Society, Inc. And the 48th Annual Meeting of the International Society of Electrochmistry, Paris, (France)., August 31 - September 5, 1997. M. Murakami and Y. Koide
  3. "Schottky barrier heights of contact metals to p-ZnSe." The 1997 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Santa Barbara (California, USA), Abst. p. 129, October 21 - 23, 1997. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  4. "Current transport mechanisms through p-ZnSe/metals interfaces with intermediate semiconductor layers", Third Pacific Rim International Conference on Advanced Materials and Processing (PRICMミ3), July 12-16, 1998, Honolulu, (Hawaii, USA) Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
  5. "Electrical properties at p-ZnSe/metal interfaces of annealed contacts.", Third Pacific Rim International Conference on Advanced Materials and Processing (PRICMミ3), July 12-16, 1998, Honolulu, (Hawaii, USA). T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki

トップへ, 国際会議, 日本語ホームへ, English Main Page,