SiGe成長初期過程：−論文(１５)−：日本語ホームへ, English Main Page,

  1. Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy. Jpn. J. Appl. Phys. vol. 28, No. 4, p. L690-L693, 1989.4 Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  2. Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy. J. Crystal Growth, vol. 99, p.254-258, 1990.2 Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  3. Growth Processes in The Initial Stage of Ge Films on (811)Si Surfaces by GeH4 Source Molecular Beam Epitaxy. J. Appl. Phys. vol. 68, No. 5, p.2164-2167, 1990.9 Y. Koide, K. Itoh, N. Ohshima, S. Zaima, and Y. Yasuda
  4. Observation of an Ordered Structure in The Initial Stage of Ge/Si Heteroepitaxial Growth. Appl. Phys. Letters, vol. 57, No. 23, p.2434-2436, 1990.12 N. Ohshima, Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  5. Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate. Appl. Surface Sci. vol. 48/49, p.69-75, 1991.5 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  6. Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing. J. Crystal Growth, vol. 115, p.106-111, 1991.11 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  7. In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy. J. Crystal Growth, vol. 115, p.365-370, 1991.11 Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
  8. In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source Molecular Beam Epitaxy. J. Crystal Growth, vol. 120, p. 284-289, 1992.7 Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  9. Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy. Appl. Surface Sci. vol. 60/61, p. 120-125, 1992.9 N. Ohshima, M. Tomioka, S. Zaima, Y. Koide, and Y. Yasuda
  10. Initial Stage of Ge Film Growth on (311)Si by Gas Source Molecular Beam Epitaxy. J. Crystal Growth, vol. 128, p.319-325, 1993.2 Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, and S. Zaima
  11. Relationship Between Growth Processes and Strain Relaxation in Si1-xGex Films Grown on (100)Si-(2x1) by Gas Source Molecular Beam Epitaxy. J. Appl. Phys. vol. 73, No. 5, p.2288-2293, 1993.3 Y. Yasuda, Y. Koide, A. Furukawa, N. Ohshima, and S. Zaima
  12. Growth behaviors of the initial Ge two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH4 Source Molecular Beam Epitaxy. Proc. of the 4th International Conference on Formation of Semiconduct or Interfaces, Forschungszentrum Julich, 14-18 June, 1993 Editors: Bruno Lengeler, Hans Luth, Winfried Monch and Johannes Pollmann (World Scientific, Singapore) p.502-505,1994 (ISBN 981-02-1559-2) M. Okada, Y. Koide, S. Zaima , and Y. Yasuda
  13. Photo-irradiation effects on surface reactions of Si momolayer overgrowth by Si2H6 Source MBE. Appl. Surface Sci. vol. 79/80, p. 304-309, 1994.6 Y. Koide, S. Zaima, M. Okada, and Y. Yasuda
  14. High-spatial Resolution Analysis of Interfaces of Semiconductor Superlattices by nm-sized Electron Probe. Proceedings of the First International Symposium on Control of Semiconductor Interfaces, (Karuizawa Japan) November 8-12, Elsevier, p. 315-320. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda
  15. IV族半導体ヘテロエピタキシー機構，日本結晶成長学会誌, vol. 21, No.5, p.361-368, 1994. 9月, 安田幸夫, 財満鎮明, 小出康夫

−国際会議発表−

  1. Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy. 9th Int. Conf. on Crystal Growth, Sendai (Japan), Abst. p. 5, August, 1989 Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  2. Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate. 5th Int. Conf. on Solid Films and Surfaces, Rhode Island, (USA) Abst. Session 14A, August, 1990 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  3. Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing. 7th Int. Conf. on Vapor Growth and Epitaxy, Nagoya, (Japan) Abst. p.165, July, 1991 N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  4. In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy. 7th Int. Conf. on Vapor Growth and Epitaxy, Nagoya, (Japan) Abst. p.238, July, 1991 Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
  5. In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source Molecular Beam Epitaxy. 3rd Int. Conf. Chemcal Beam Epitaxy and Related Growth Techniques, Oxford (UK), Abst. F6, September, 1991 Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  6. Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy. 1st Int. Conf. on Atomically Controlled Surfaces and Interfaces, Tokyo, (Japan) Abst. p.142, November, 1991 N. Ohshima, S. Zaima, Y. Koide, and Y. Yasuda
  7. Initial Stage of Ge Film Grown on (311)Si by Gas Source Molecular Beam Epitaxy. 10th Int. Conf. on Crystal Growth, San Diego, (USA) Abst. p. 321, August, 1992 Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, S. Zaima
  8. Growth Behaviors of the Initial Ge Two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH4 Source Molecular Beam Epitaxy. 4th Int. Conf. on the Formation of Semiconductor Interfaces, Julich, (Germerny) Abst. July, 1993 M. Okada, Y. Koide, S. Zaima, and Y. Yasuda
  9. Photo-irradiation Effects in the Initial Stage of Si Homoepitaxial Growth by Si2H6 Source MBE. 1st Int. Conf. on Photo-Excited Processes and Applications, Sendai(Japan) Abst. p.156, Ocotber, 1993 Y.Koide, M.Okada, S.Zaima, and Y.Yasuda
  10. High-spatial Resolution Analysis of Interfaces of Semiconductor Superlattices by nm-sized Electron Probe. Proceedings of the First International Symposium on Control of Semiconductor Interfaces, (Karuizawa Japan) November 8-12, Abst. A5, 1993.11. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda

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