SiC：-論文(3)-

1. "CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC." Materials Sci. Forum, vol. 389-393, p. 885-888. 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
2. "Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-type 4H-SiC." Materials Transactions, vol. 43, No. 7. p. 1684-1688, 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
3. "Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC." Mat. Sci. & Eng. B, 98, No. 3, p. 286-293, 2003. R. Konishi, R. Yasukochi, O. Nakatsuka, M. Moriyama, Y. Koide, and M. Murakami.

-International Conference Presentations-(２)

1. "CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC." International Conference on silicon Carbide and Related Materials, November 2001, (Tsukuba, Japan) Abst. , O. Nakatsuka, Y. Koide, and M. Murakami.
2. "Effects of Co or Ni Addition to TiAl ohmic contact for p-type 4H-SiC." 2002 Electronic Materials Conference (EMC), June 26-28, 2002. (Santa Barbara, USA) Session NN. Abst. p. 57. O. Nakatsuka, R. Konishi, R. Yasukochi, Y. Koide, and M. Murakami.

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