論文 (1988 - 1993 : ２８ 編) ： 日本語ホームへ, English Main Page,

  1. "Initial Stage of Growth of Ge on (100)Si by Gas Source Molecular Beam Epitaxy." Jpn. J. Appl. Phys. vol. 28, No. 4, p. L690-L693, 1989.4. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  2. "Formation of Si-SiO2 Interface at Low Temperatures Using Microwave-Excited Plasma." Appl. Surface Sci. vol. 41/42, p.429-432, 1989.5. S. Zaima, T. Kaida, Y. Koide, and Y. Yasuda
  3. "Y-Ba-Cu-O Superconducting Thin Films Prepared by Plasma-Assisted Flash Evaporation." Appl. Phys. Letters, vol. 55, No .3, p.307-309, 1989.7. Y. Yasuda, Y. Koide, S. Zaima, and N. Sano
  4. "Growth Prcesses in The Initial Stage of Deposition of Ge Films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 99, p.254-258, 1990.2. Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
  5. "Mechanisms of Silicon Oxidation at Low Temperatures by Microwave- Excited O2 Gas and O2-N2 Mixed Gas." J. Appl. Phys. vol. 67, No. 5, p.2603-2607, 1990.3. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide
  6. "Conduction Mechanism of Leakage Current in Ta2O5 Films on Si Prepared by LPCVD." J. Electrochem. Soc. vol. 137, No. 9, p.2876-2879, 1990.9. S. Zaima, T. Furuta, Y. Koide, M. Iida, and Y. Yasuda
  7. "Solid Phase Reaction and Electrical Properties in Zr/Si Systems." Appl. Phys. Letters vol. 57, No.11, p.1105-1107, 1990.9. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
  8. "Growth Processes in The Initial Stage of Ge Films on (811)Si Surfaces by GeH4 Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 68, No. 5, p.2164-2167, 1990.9. Y. Koide, K. Itoh, N. Ohshima, S. Zaima, and Y. Yasuda
  9. "Anisotropy of Piezoresistance in N-Channel Inversion Layers of Metal-Oxide-Semiconductor Transistors on (001)Si." J. Appl. Phys. vol. 68, No.11, p.5687-5691, 1990.12. T. Maruyama, S. Zaima, Y. Koide, Y. Kanda, and Y. Yasuda
  10. "Effects of Oxidation Conditions on Electrical Properties of SiC-SiO2 Interface." J. Appl. Phys. vol. 68, No. 12, p.6304-6308, 1990.12. S. Zaima, K. Onoda, Y. Koide, and Y. Yasuda
  11. "Observation of an Ordered Structure in The Initial Stage of Ge/Si Heteroepitaxial Growth." Appl. Phys. Letters, vol. 57, No. 23, p.2434-2436, 1990.12. N. Ohshima, Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  12. "Formation of a Superstructure in The Initial Stage of Ge Epitaxial Growth on Si(100) Substrate." Appl. Surface Sci. vol. 48/49, p.69-75, 1991.5. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  13. "Solid-Phase Reactions and Crystallographic Structures in Zr/Si Systems." J. Appl. Phys., vol. 69, N0. 10, p.7050-7056, 1991.5. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
  14. "Atomic Mixing Phenomena and Changes in Faceted Structure of Ge Films Grown on (100)Si by Thermal Annealing." J. Crystal Growth, vol. 115, p.106-111, 1991.11. N. Ohshima, Y. Koide, S. Zaima, and Y. Yasuda
  15. "In-situ RHEED Study on Growth Processes in The Initial Stage of SiGe Alloy Film Deposition by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 115, p.365-370, 1991.11. Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
  16. "Formation of Interfacial Layers and Electrical Conduction Mechanisms Dominating The Contact Resistivity in Refractory Metal-Si Contacts." Appl. Surface Sci. vol. 56-58, p. 545-550, 1992.4. T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
  17. "Observation of Si-SiO2 Interface States within The Conduction Band by Tunneling Current Spectroscopy." Appl. Surface Sci. vol. 56-58, p.69-74, 1992.4. M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda
  18. "In-situ RHEED Study on The Effect of Light Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source Molecular Beam Epitaxy." J. Crystal Growth vol. 120 p.284-289, 1992.7. Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
  19. "Initial Growth of Ge Films on Si(111)7x7 Surfaces by Gas Source Molecular Beam Epitaxy." Appl. Surface Sci. vol. 60/61, p.120-125, 1992.9. N. Ohshima, M. Tomioka, S. Zaima, Y. Koide, and Y. Yasuda
  20. "Initial Stage of Ge Film Growth on (311)Si by Gas Source Molecular Beam Epitaxy." J. Crystal Growth, vol. 128, p.319-325, 1993.2. Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide, and S. Zaima
  21. "Fabrication and carrier transport of, one-dimensional quntum wires of p-type silicon." J. Vacuum Sci. & Tech. B, vol. 11, No.1, p.61-65, 1993.1/2. H.Iwano, S.Zaima, Y.Koide, and Y.Yasuda
  22. "Relationship Between Growth Processes and Strain Relaxation in Si1-xGex Films Grown on (100)Si-(2x1) by Gas Source Molecular Beam Epitaxy." J. Appl. Phys. vol. 73, No. 5, p.2288-2293, 1993.3. Y.Yasuda, Y.Koide, A.Furukawa, N.Ohshima, and S.Zaima
  23. "Study on determing factors of low contact resistivity in transition metal-silicon systems." Appl. Surface Sci. vol. 70/71, p.624-628, 1993.4. S.Zaima, T.Yamauchi, Y.Koide, and Y.Yasuda
  24. "Photoelectron spectroscopic studies on interfacial reactions in Zr/2x1(100) Si systems." J. Vac. Sci. & Tech. A, vol.11, No.5, p.2619-2622, 1993.10. T. Yamauchi, H. Kitamura, N. Wakai, S. Zaima, Y. Koide, and Y. Yasuda
  25. "Growth behaviors of the initial Ge two-dimensional Layers on (100)Si Substrates and Photo-irradiation Effects by GeH4 Source Molecular Beam Epitaxy." Proc. of the 4th International Conference on Formation of Semiconduct or Interfaces, Forschungszentrum Julich, 14-18 June, 1993 Editors: Bruno Lengeler, Hans Luth, Winfried Monch and Johannes Pollmann (World Scientific, Singapore) p.502-505,1994 (ISBN 981-02-1559-2). M. Okada, Y. Koide, S. Zaima , and Y. Yasuda
  26. "Photo-irradiation effects on surface reactions of Si momolayer overgrowth by Si2H6 Source MBE.." Appl. Surface Sci. vol. 79/80 p. 304-309, 1994.6. Y. Koide, S. Zaima, M. Okada, and Y. Yasuda
  27. "High-spatial Resolution Analysis of Interfaces of Semiconductor Superlattices by nm-sized Electron Probe." Proceedings of the First International Symposium on Control of Semiconductor Interfaces, (Karuizawa Japan) November 8-12, Elsevier, p. 315-320. N. Tanaka, Y. Koide, S. Zaima, and Y. Yasuda
  28. "IV族半導体ヘテロエピタキシー機構，" 日本結晶成長学会誌, vol. 21, No.5, p.361-368, 1994. 9月, 安田幸夫, 財満鎮明, 小出康夫

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