論文 (1984 - 1988 : 7 編) ：日本語ホームへ, English Main Page,

2. "Behaviour of Zn as Dopant in The Photoluminescence of Al_xGa_1-xN." Solid State Commun. vol. 57, No. 1, p.17-20, January, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
3. "Edge Emission of Al_xGa_1-xN." Solid State Commun. vol. 60, No. 6, p.509-512, June, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
4. "Epitaxial Growth and Properties of Al_xGa_1-xN by MOVPE.". J. Electrochem. Soc. vol. 133, No. 9, p.1956-1960, September, 1986. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto
5. "ＭＯＶＰＥによるＡｌＧａＮ／α−Ａｌ2Ｏ3ヘテロエピタキシーにおけるＡｌＮバッファ層の効果，"　日本結晶成長学会誌，vol.13，No.4，p.8-15，1986年7月，小出康夫, 天野　浩, 平松和政, 澤木宣彦, 赤崎　勇.
6. "Energy Band-gap Bowing Parameter in An Al_xGa_1-xN Alloy." J. Appl. Phys. vol.61, No.9, p.4540-4543, May, 1987. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki
7. "Effect of an AlN Buffer Layer on Al_xGa_1-xN/α-Al₂O₃ Heteroepitaxial Growth by MOVPE.." Jpn. J. Appl. Phys. vol. 27, No. 7, p.1156-1161, July, 1988. Y. Koide, K. Itoh, N. Itoh, N. Sawaki, and I. Akasaki
8. "Effects of AlN Buffer Layer on Crystallographic Structure and Electrical and Optical Properties of GaN and Ga_1-xAl_xN (0<x<0.4) Films Grown on Sapphire Substrates by MOVPE.". J. Crystal Growth, vol. 98, p.209-219, May, 1989. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki.

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