論文 (1984 - 1988 : 7 編) :日本語ホームへ, English Main Page,

  1. "Behaviour of Zn as Dopant in The Photoluminescence of AlxGa1-xN." Solid State Commun. vol. 57, No. 1, p.17-20, January, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
  2. "Edge Emission of AlxGa1-xN." Solid State Commun. vol. 60, No. 6, p.509-512, June, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
  3. "Epitaxial Growth and Properties of AlxGa1-xN by MOVPE.". J. Electrochem. Soc. vol. 133, No. 9, p.1956-1960, September, 1986. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto
  4. "MOVPEによるAlGaN/α−Al2O3ヘテロエピタキシーにおけるAlNバッファ層の効果," 日本結晶成長学会誌,vol.13,No.4,p.8-15,1986年7月,小出康夫, 天野 浩, 平松和政, 澤木宣彦, 赤崎 勇.
  5. "Energy Band-gap Bowing Parameter in An AlxGa1-xN Alloy." J. Appl. Phys. vol.61, No.9, p.4540-4543, May, 1987. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki
  6. "Effect of an AlN Buffer Layer on AlxGa1-xN/α-Al2O3 Heteroepitaxial Growth by MOVPE.." Jpn. J. Appl. Phys. vol. 27, No. 7, p.1156-1161, July, 1988. Y. Koide, K. Itoh, N. Itoh, N. Sawaki, and I. Akasaki
  7. "Effects of AlN Buffer Layer on Crystallographic Structure and Electrical and Optical Properties of GaN and Ga1-xAlxN (0<x<0.4) Films Grown on Sapphire Substrates by MOVPE.". J. Crystal Growth, vol. 98, p.209-219, May, 1989. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki.

日本語ホームへ, English Main Page,