金属／Si & 絶縁物／Si：−論文 (13)−

  1. Formation of Si-SiO2 Interface at Low Temperatures Using Microwave-Excited Plasma. Appl. Surface Sci. vol. 41/42, p. 429-432, May, 1989. S. Zaima, T. Kaida, Y. Koide, and Y. Yasuda
  2. Y-Ba-Cu-O Superconducting Thin Films Prepared by Plasma-Assisted Flash Evaporation. Appl. Phys. Letters, vol. 55, No .3, p. 307-309, July, 1989. Y. Yasuda, Y. Koide, S. Zaima, and N. Sano
  3. Mechanisms of Silicon Oxidation at Low Temperatures by Microwave- Excited O2 Gas and O2-N2 Mixed Gas. J. Appl. Phys. vol. 67, No. 5, p.2603-2607, March, 1990. Y. Yasuda, S. Zaima, T. Kaida, and Y. Koide
  4. Conduction Mechanism of Leakage Current in Ta2O5 Films on Si Prepared by LPCVD. J. Electrochem. Soc., vol.137, No. 9, p. 2876-2879, September, 1990. S. Zaima, T. Furuta, Y. Koide, M. Iida, and Y. Yasuda
  5. Solid Phase Reaction and Electrical Properties in Zr/Si Systems. Appl. Phys. Letters, vol. 57, No.11, p. 1105-1107, September, 1990. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
  6. Anisotropy of Piezoresistance in N-Channel Inversion Layers of Metal-Oxide-Semiconductor Transistors on (001)Si. J. Appl. Phys., vol. 68, No.11, p. 5687-5691, December, 1990. T. Maruyama, S. Zaima, Y. Koide, Y. Kanda, and Y. Yasuda
  7. Effects of Oxidation Conditions on Electrical Properties of SiC-SiO2 Interface. J. Appl. Phys., vol. 68, No. 12, p. 6304-6308, December, 1990. S. Zaima, K. Onoda, Y. Koide, and Y. Yasuda
  8. Solid-Phase Reactions and Crystallographic Structures in Zr/Si Systems. J. Appl. Phys., vol. 69, No. 10, p. 7050-7056, May, 1991. T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda
  9. Formation of Interfacial Layers and Electrical Conduction Mechanisms Dominating The Contact Resistivity in Refractory Metal-Si Contacts. Appl. Surface Sci., vol. 56-58, p. 545-550, April, 1992. T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
  10. Observation of Si-SiO2 Interface States within The Conduction Band by Tunneling Current Spectroscopy. Appl. Surface Sci. vol. 56-58, p. 69-74, April, 1992. M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda
  11. Study on determing factors of low contact resistivity in transition metal-silicon systems. Appl. Surface Sci. vol. 70/71, p. 624-628, April, 1993. S.Zaima, T.Yamauchi, Y.Koide, and Y.Yasuda
  12. Photoelectron spectroscopic studies on interfacial reactions in Zr/2x1(100) Si systems. J. Vac. Sci. & Tech. A, vol.11, No.5, p. 2619-2622, October, 1993. T. Yamauchi, H. Kitamura, N. Wakai, S. Zaima, Y. Koide, and Y. Yasuda
  13. Fabrication and carrier transport of, one-dimensional quntum wires of p-type silicon. J. Vac. Sci. & Tech. B, vol. 11, No.1, p. 61-65, January/February, 1993. H. Iwano, S.Zaima, Y.Koide, and Y.Yasuda

−国際会議発表(3)−

  1. Formation of Si-SiO2 Interface at Low Temperatures Using Microwave-Excited Plasma. 2nd Int. Conf. on Formation of Semiconductor Interface, Takarazuka, (Japan) Abst. p. 161, November, 1988. S. Zaima, T. Kaida, Y. Koide, Y. Yasuda
  2. Formation of Interfacial Layers and Electrical Conduction Mechnisms Dominating The Contact Resistivity in Refractory Metal-Metal-Si Contacts. 3rd Int. Conf. on Formation of Semiconductor Interface, Rome, (Italy) Abst. p. 89, May, 1991. T. Yamauchi, M. Kataoka, S. Zaima, Y. Koide, and Y. Yasuda
  3. Observation of Si-SiO2 Interface States within The Conduction Band by Tunneling Current Spectroscopy. 3rd Int. Conf. on Formation of Semiconductor Interface, Rome, (Italy) Abst. p. 168, May, 1991. M. Sakashita, S. Zaima, Y. Koide, and Y. Yasuda

トップヘ, 日本語ホームへ, English Main Page,