論文（1993 - 2002 : ５０編）：日本語ホームへ, English Main Page,

  1. "Ohmic contact materials for compound semiconductors." Proceedings of the Twenty First State-of-the-Art Program on Compound Semiconductiors (SOTAPOCS XXI) p. 163-174, 1995. M. Murakami, T. Oku, Y. Koide, H. Wakimoto, H. Ishikawa, S. Kobayashi, and M. Furumai.
  2. "Dependence of electrical properties on work functions of metals contacting to p-type ZnSe." Jpn. J. Appl. Phys. vol. 78, No.5, p.1657-1663, March,1996. O. Tadanaga, Y. Koide, K. Hashimoto, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki. and M. Murakami
  3. "Cd-based Ohmic Contact Materials to p-type ZnSe." J. Crystal Growth, vol. 159, p.709-713, April, 1996. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  4. "Effects of small amount of silver added to NiGe Ohmic contacts to n-type GaAs." J. Electrochem. Soc., vol. 143, No. 5, p. 1705-1709, May, 1996. T. Wakimoto, T. Oku, Y. Koide, and M. Murakami
  5. "Effects of Surface Cleaning on Electrical porperties on Ni contacting to p-type ZnSe." J. Vac. Sci. & Tech. B, vol. 14, No. 3, p. 1812-1818, June, 1996. H. Ishikawa, K. Tsukui, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
  6. "Contact resistance at interfaces between carbide and non-carbide forming metals and p-diamond." Diamond Films and Technology, vol. 6, No. 2, p. 61-76, August, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami.
  7. "NiGe-Based Ohmic contacts to n-Type GaAs." J. Electronic Materials, vol. 25, No. 11, p. 1684-1694, November, 1996. F. Furumai, T. Oku, H. Ishikawa, Y. Koide, and M. Murakami.
  8. "Cd and Te based Ohmic Contact Materials to p-type ZnSe." J. Electronic Materials, vol. 25, No. 12, p. 1823-1831, December, 1996. K. Hashimoto, Y. Koide, T. Oku, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakam.
  9. "Effects of Surface Treatments and Metal Work Functions on Electrical Properties at p-GaN/metal Interfacesl." J. Appl. Phys., vol. 81, No.2, p.1315-1322, February, 1997. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami.
  10. "Carrier transport mechanism of Ohmic contact to p-type diamond." J. Appl. Phys., vol. 81, No. 10, p. 6815-6821, May, 1997. M. Yokoba, Y. Koide, A. Otsuki, A. Ako, T. Oku, and M. Murakami
  11. Carrier transport mechanisms through the metal/p-diamond semiconductor interfaces. Diamond and Related Materials, vol. 6, p. 847-851, June, 1997. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M. Murakami
  12. Dpendence of electrical properties on work functions of metals contacting to p-type GaN. Applied Surface Science, 117/118, p.373-378, July, 1997. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
  13. "Schottky barriers of metals contacting to p-type ZnSe." J. Appl. Phys., vol. 82, No. 9. p. 2393-2470, September 1, 1997, Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
  14. "Effects of intermediate layers on carrier transport mechanisms through p-ZnSe/metals interfeaces." J. Electronic Materials, vol. 27, No. 8, August , p.998-1002, 1998, T. Kagawa, Y. Koide, T. Oku, H. Mori, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
  15. "Electrical properties of p-ZnSe/metals interfaces with intermediate semiconductor layers", The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2519-2524, 1998. Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki
  16. "Electrical properties at p-ZnSe/metal interfaces of annealed contacts". The Third Pacific Rim International Conference on Advanced Materials and Processing (PRICM 3), Edited by M.A. Imam, R. DeNale, S. Hanada, Z. Zhong, and D.N. Lee, The Minerals, Metals & Materials Society, p.2525-2530, 1998.. T. Kawakami, Y. Koide, M. Murakami, N. Teraguchi, Y. Tomomura, and A. Suzuki.
  17. "Electrical properties at p-ZnSe/metals interfaces." J. Electronic Materials, vol. 27, No. 8, August , p.929-935, 1998, T. Kawakami, Y. Koide, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
  18. "Schottky barrier heights of contact metals to p-ZnSe." J. Electronic Materials, vol 27, No. 6, June, p.772-775, 1998. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami.
  19. "Ohmic Contacts for Compound Semiconductors" Critical Reviews in Solid State and Materials Sciences, vol. 23, No. 1, (CRC Press), p.1-60, 1998.. M. Murakami and Y. Koide.
  20. "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." Diamond Films and Technology, vol. 8, No. 6, p. 407-413, 1998. Y. Koide, T. Toyama, and M. Murakami.
  21. p-ZnSeおよびp-GaNワイドギャップ半導体のオーム性電極, 電子情報通信学会論文誌, Vol.J81-C-II，No. 10， p. 805-809, 1998年 . 小出康夫, 村上正紀
  22. "なぜショットキーバリアは形成されるのか," 応用物理学会誌、第67巻、第2号、p. 149-154, 1998年, 2月, 小出康夫，村上正紀
  23. "Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN." J. Electronic Materials, vol. 28, No. 3, p. 341-346, 1999. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami.
  24. "Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors." Electronics and Communications in Japan Part II Electronics, vol. 82, No.1, p.43-47, (1999). Y. Koide, T.Kawakami, and M. Murakami.
  25. "Low-resistance TaTi Ohmic Contacts for p-type GaN." Appl. Phys. Letters, 74(2) p. 275-277, January, 1999. S. Suzuki, T. Kawakami, A. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami.
  26. "Formation and deterioration mechanisms of low-resistance TaTi Ohmic contacts for p-GaN." J. Appl. Phys. vol. 86, No. 9, p. 5079-5084, (1999). M. Suzuki, T. Arai, T. Kawakami, S. Kobayashi, Y. Taga, Y. Koide, and M. Murakami.
  27. "Effects of NiO on electrical properties of NiAu-based Ohmic contacts for p-type GaN." Appl. Phys. Lett., 75(26), p.4145-4147, (1999). T. Maeda, Y. Koide, and M. Murakami.
  28. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Ni and Pd as a Base Metal." J. Appl. Phys. vol. 85, No. 11, June 1, p. 7792-7796, (1999).. A. Yamaguchi, T. Okada, Y. Iguchi, and T. Saito, H. Asamizu, Y. Koide, and M. Murakami.
  29. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." Inst. Phys. Conf. Ser. No. 162, p.793-798, (1999). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide and M. Murakami.
  30. "Ohmic Contacts to p-ZnSe and p-GaN." Inst. Phys. Conf. Ser., vol. 162, p. 787-792, (1999). Y. Koide, T. Kawakami, and M. Murakami.
  31. "Effect of the first antimony layer on AuZn ohmic contacts to p-type InP." J. Vac. Sci. & Technol. B vol.18, No. 4 July/August, p.1957-1961 (2000). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami.
  32. "Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," J. Electron. Mater. vol.29, No. 7, p. 18-19, (2000). Y. Koide, T. Maeda, and M. Murakami.
  33. "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Appl. Surf. Sci. vol. 159-160, p. 174-178, 2000. H. Asamizu, A. Yamaguchi, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami.
  34. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN." Proceedings of International Workshop of Nitride Semiconductors, IPAP Conference Series 1, p. 821-824, 2000. Y. Koide, T. Arai, and M. Murakami.
  35. "Surface damage of diamond field emitter" New Diamond and Frontier Carbon Technology, vol. 10, No. 1, p. 53-53, 2000. T. Asari, M. Itahashi, Y. Koide, and M. Murakami.
  36. "Development of Pt-based Ohmic contact materials for p-type GaN." J. Appl. Phys. vol. 89, No. 5, p. 2826-2831. 2001. T. Arai, H. Sueyoshi, M. Moriyama, Y. Koide, and M. Murakami.
  37. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. II. Effects of p-type conduction.." Diamond and Related Materials, vol. 10, No. 12, p. 2118-2124, 2001. M. Itahashi, K. Umehara, Y. Koide, and M. Murakam.
  38. "Surface damage of diamond-based emitters." New Diamond Films and Frontier Carbon Technology, vol. 11, No. 4, p. 277-283, 2001 Y. Koide, T. Asari, M. Itahashi, and M. Murakami.
  39. "CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiC." Materials Sci. Forum, vol. 389-393, p. 885-888. 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
  40. "Effect of Pd or Pt addition to Ti/Al ohmic contact materials for n-type AlGaN." Appl. Phys. Letts. vol. 80, No. 16, p. 2934-2936. April 22, 2002. S. Murai, H. Masuda, Y. Koide, and M. Murakami.
  41. "Effects of sp2/sp3 bonding ratios on field emission properties of diamond-like carbon." Diamond and Related Materials, vol.11, No. 7, p.1429-1435, 2002, Y. Umehara, S. Murai, Y. Koide, and M. Murakam
  42. "Low Resistance TiAl Ohmic Contacts with Multi-Layered Structure for p-type 4H-SiC." Materials Transactions, vol. 43, No. 7. p. 1684-1688, 2002. O. Nakatsuka, Y. Koide, and M. Murakami.
  43. "Field Emission of Polycrystalline Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition. I. Effects of surface morphology." Diamond and Related Materials, 11, p. 1897-1994, 2002. T. Toyama, Y. Koide, and M. Murakami.
  44. "Influence of oxygen on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 3rd Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Oct. 9-12, 2002, Hakone, Japan, p. 27-30. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  45. "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN." J. Appl. Phys., vol 92, No. 7, p. 3657-3661, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki.
  46. "Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC." Mater. Sci. & Eng. B, 98, No. 3, p. 286-293, 2003. R. Konishi, R. Yasukochi, O. Nakatsuka, M. Moriyama, Y. Koide, and M. Murakami.
  47. "Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 10th International Symposium for Advanced Materials, March 10-13, 2003, Tsukuba, Japan, p 89-90, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  48. "Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." Proceedings of the 1st International National Institute for Materials Science Conference, March 17-19, 2003, Tsububa, Japan, p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  49. "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." Physica Status Solidi.(b), 240, No.2, p. 356-359, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  50. "Development of Electrode Materials for Semiconductor Devices." Mater. Sci. Forum,  vol. 475-479, p. 1705-1714, 2005. Masanori Murakami, Yasuo Koide, Miki Moriyama, Susumu Tsukimoto.

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