1. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Ni and Pd as a Base Metal." J. Appl. Phys. vol. 85, No. 11, June 1, p. 7792-7796, (1999). A. Yamaguchi, T. Okada, Y. Iguchi, and T. Saito, H. Asamizu, Y. Koide, and M. Murakami
2. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." Inst. Phys. Conf. Ser. No. 162, p.793-798, (1999). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide, and M. Murakami
3. "Effect of the first antimony layer on AuZn ohmic contacts to p-type InP." J. Vac. Sci. & Technol. B vol.18, No. 4 July/August, p.1957-1961, (2000). A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami
4. "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Appl. Surf. Sci. vol. 159-160, p. 174-178, 2000. H. Asamizu, A. Yamaguchi, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami.

-International Conference Presentation-(2)

1. "Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." 25th International Symposium on Compound Semiconductors (ISCS '98), (Nara, Japan) Abst. TuP-39, October 12-16, 1998. A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito, Y. Koide, and M. Murakami
2. "The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Third International Symposium on Control of Semiconductor Interfaces (ISCSI-III), (Karuizawa, Japan), Abst. A5-5, Octorber 25-29, 1999. H. Asamizu, A. Yamaguchi, Y. Iguchi, T. Saitoh, Y. Koide, and M. Murakami

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