Heterojunction Physics -論文（４１）-

  1. 1st Ferrodielectic/Diamond; "Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor," M. Y. Liao, M. Imura, X. Fang, K. Nakajima, G. Chen, and Y. Koide, Appl. Phys. Lett. 94, 242901 2009.
  2. "Improved ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin film on single crystal diamond using CaF2 layer," M. Y. Liao, K. Nakajima, M. Imura, Y. Koide, Appl. Phys. Lett., 96, 012910, 2010.
  3. "Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M.Y. Liao, Y. Koide, H. Amano, J. Cryst. Growth, vol. 312, 368-372, 2010.
  4. "Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, Diamond Relat. Mater., vol. 19, 131-133, 2010.
  5. "Fabrication and electrical properties of SrTiO3/diamond junctions," Guang-chao Chen, M. Y. Liao, M. Imura, K. Nakajima, Y. Sugimoto, Y. Koide, Diamond Relat. Mater., 19, 319, 2010.
  6. "Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy," M. Imura, K. Nakajima, M. Y. Liao, Y. Koide, and H. Amano, J. Cryst. Growth, vol. 312, 1325-1328, 2010.
  7. "Piezoelectric PbZr0.52Ti0.48O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties," M. Y. Liao, Y. Gotoh, H. Tsuji, K.Nakajima, M. Imura, and Y. Koide, J. Appl. Phys., 107, 024101, 2010.
  8. "Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy," M. Imura, T. Ohnishi, M. Sumiya, M. Y. Liao, Y. Koide, H. Amano, M. Lippmaa, Phys. Status Solidi C, vol. 7, No. 10, p.2365-2367, 2010.
  9. 1st AlN/Diamond FET: "Demonstration of diamond field effect transistors by AlN/diamond heterostructure," M. Imura, R. Hayakawa, E. Watanabe, Y. Koide, and H. Amano, Physica Status Solidi-Rapid Research Letters, vol. 5, No.3, 125-127 2011.
  10. "Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes," D. Inoue, A. Miura, T. Nomura, N. Ikeda, Y. Sugimoto, D. Tsuya, and Y. Koide, Appl. Phys. Lett., FEB 28 2011, DOI: ARTN 093113DOI 10.1063/1.3560467
  11. "Devlelopment of AlN/dimaond heterojunction field effect transistors," M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagatad, M. Liao, Y. Koide, J. Yamamoto, K. Bane, M. Iwaya, H. Amano, Diamond Relat. Mater., vol. 24, 206-209, 2012.
  12. "Low contact resistance metals for graphene based devices," E. Watanabe, A. Conwill, D. Tsuya, Y. Koide, Diamond Relat. Mater., vol. 24, 171-174, 2012.
  13. "Nanophotonics based on semiconductor-photonic crystal/quantum dot and metal-/semiconductor-plasmonics," K. Asakawa, Y. Sugimoto, N. Ikeda, D. Tsuya, Y. Koide, Y. Watanabe, N. Ozaki, S. Ohkouchi, T. Nomura, D. Inoue, T. Matsui, A. Miura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No.2, 178 (2012).
  14. "Color filter based on surface plasmon resonance utilizing sub-micron periodic hole array in aluminum thin film," N. Ikeda, Y. Sugimoto, M. Ochiai, T. Daijyu, Y. Koide, D. Inoue, A. Miura, T. Nomura, H. Fujikawa, K. Sato, IEICE Trans. Electron., E95-C, No. 2, 251 (2012).
  15. "Ploarization filters for visible light consisting of subwavelength slits in an aluminum film," D. Inoue, T. Nomura, A. Miura, H. Fujikawa, K. Sato, N. Ikeda, D. Tsuya, Y. Sugimoto, Y. Koide, J. Lihgtwave Techol. vol. 30, 3463-3467 (2012).
  16. High-k/Diamond Impact; "Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices," S. Cheng, L. Sang, M. Y. Liao, J. Liu, M. Imura, H. Li, and Y. Koide, Appl. Phys. Lett., vol. 101, 232907, 2012.
  17. "Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond," J. W. Liu, M. Y. Liao, M. Imura, Y. Koide, Appl. Phys. Lett. vol. 101, 252108 (2012).
  18. Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide, Appl. Phys. Lett. vol. 102, 112910 (2013).
  19. “Interfacial chemical bonding state and band alignment of CaF2 hydrogenterminated diamond heterojunction,” J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide, J. Appl. Phys. vol. 113, 123706 (2013).
  20. "Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy, J. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 38, 24-27 (2013).
  21. High-k Gate Oxide Diamond FET; “Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors,” J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide, J. Appl. Phys. vol. 114, 084108 (2013).
  22. High-k Normally-off Diamond FET; “Normally-off HfO2-gated diamond field effect transistors,”  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. vol. 103, 092905 (2013).
  23. "Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond," J. Liu, M-Y. Liao, M. Imura, H. Oosato, E.Watanabe, Y. Koide, Dia. Relat. Mater., vol. 54, 55-58, (2015).
  24. "InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties," L-W. Sang, M-W. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys 117, 105706 (2015); doi: 10.1063/1.4914908
  25. "Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures," M-Y. Liao, J-W. Liu, L-W. Sang, D. Coathup, J-L Li, J. M. Imura, Y. Koide, H-T. Ye, Appl. Phys. Lett., 106, 083506 (2015).
  26. D/E-modes control of MOSFETs: "Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide, J. Appl. Phys. vol. 118, 115704 (2015); doi: 10.1063/1.4930294
  27. "Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer," R. G. Banal, M. Imura, and Y. Koide, AIP Advances 5, 097143 (2015); doi: 10.1063/1.4931159
  28. "P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas,"K. Zhang, M.Sumiya, M-Y. Liao, Y.Koide, L-W. Sang, Scientific Reports, 6, 23683 (2016), doi:10.1038/srep23683.
  29. "Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond," Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, and Haitao Ye, Appl. Phys. Lett., 108, 012105 (2016); doi: 10.1063/1.4939650
  30. "High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors," J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide, J. Appl. Phys., 120, 124504 (2016); doi: 10.1063/1.4962851.
  31. "Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors," Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide, J. Appl. Phys., 120, 115307 (2016); doi: 10.1063/1.4962854.
  32. Nanoscale multigate MOSFETs: “Design and fabrication of highperformance diamond triple-gate field-effect transistors,” Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, & Yasuo Koide, Sci. Reprots, 6, 34757 (2016).
  33. “Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE,” Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide, Phys. Status Solidi A, 1?8 (2016) , DOI 10.1002/pssa.201600727.
  34. “Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond,” Jing Zhao, J. Liu, S. Liwen, Meiyong Liao, David Coathup, M. Imura, BG Shi, Changzhi Gu, Y. Koide, Haitao Ye : Appl. Phys. Lett. 108, 012105 (2016), DOI: 10.1063/1.4939650.
  35. “Electrical hysteresis in p-GaN metal-oxide-semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric,” K. Zhang, M.W. Liao, M. Imura, T. Nabatame, A. Ohi, M. Sumiya, Y. Koide, S. Liwen : Appl. Phys. Express 9[12] 121002 (2016), DOI:10.7567/APEX.9.121002.
  36. “Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel,” M. Imura, R. Banal, L. Meiyong, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide : J. Appl. Phys. 121, 025702-1, (2017) , DOI:10.1063/1.4972979.
  37. "Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate," R. G. Banal, M. Imura and Y. Koide, INTECH Open Science and Reserch, Chapter 3, pp. 43-58. (2017). DOI: 10.5772/66177
  38. "Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors," J.W. Liu and Y. Koide, Biosensors and Biodetection, Part of the Methods in Molecular Biology book series (MIMB, volume 1572) pp 217-232. DOI: 10.1007/978-1-4939-6911-1_15
  39. "Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator," J. W. Liu, H. Oosato, M. Y. Liao, and Y. Koide, Appl. Phys. Lett., 110, 203502 (2017). DOI: 10.1063/1.4983091
  40. "Logic Circuits with Hydrogenated Diamond Field-Effect Transistors," J.W. Liu, H. Ohsato, M..W. Liao, M. Imura, E. Watanabe, and Y. Koide, IEEE Electron Device Lett., vol. 38, No. 7, (2017). 922-934.
  41. "Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters," J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, and Y. Koide, J. Appl. Phys., 121, 224502 (2017). DOI: 10.1063/1.4985066

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