GaN-Publications-(1８)

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  1. "Dependence of electrical properties on surface treatments and work functions of metals contacting to p-type GaN." J. Appl. Phys., vol. 81, No.2, p.1315-1322, February, 1997. Important paper. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
  2. "Dpendence of electrical properties on work functions of metals contacting to p-type GaN." Applied Surface Science, 117/118, p. 373-378, July, 1997. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
  3. "p-ZnSeおよびp-GaNワイドギャップ半導体のオーム性電極," 電子情報通信学会論文誌, Vol.J81-C-II，No. 10， p.805-809, 1998年. 小出康夫, 村上正紀
  4. "Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-GaN." J. Electronic Materials, vol. 28, No. 3, p. 341-346, 1999. Important paper. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, N. Shibata, and M. Murakami
  5. "Ohmic contact materials for p-ZnSe and p-GaN." Inst. Phys. Conf. Ser. No. 162, p.787-792. (1999). Y. Koide, T.Kawakami, and M. Murakami
  6. "Low-resistance TaTi Ohmic Contacts for p-type GaN." Appl. Phys. Letters, 74(2) p. 275-277, January, 1999. Key paper. S. Suzuki, T. Kawakami, A. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami
  7. "Ohmic Contacts to p-ZnSe and p-GaN Wide-Gap Semiconductors." Electronics and Communications in Japan, vol. 82, No.1, p.43-47, (1999). Y. Koide and M. Murakami
  8. "Formation and deterioration mechanisms of low-resistance TaTi Ohmic contacts for p-GaN." J. Appl. Phys. vol. 86, No. 9, p. 5079-5084, (1999). M. Suzuki, T. Arai, T. Kawakami, S. Kobayashi, Y. Taga, Y. Koide, and M. Murakami.
  9. "Effects of NiO on electrical properties of NiAu-based Ohmic contacts for p-type GaN." Appl. Phys. Lett., 75(26), p.4145-4147, (1999). T. Maeda, Y. Koide, and M. Murakami.
  10. "Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," J. Electron. Mater. vol.29, No. 7, p. 18-19, (2000). Y. Koide, T. Maeda, and M. Murakami.
  11. "Development of Pt-based Ohmic contact materials for p-type GaN." J. Appl. Phys. vol. 89, No. 5, p. 2826-2831. 2001. T. Arai, H. Sueyoshi, M. Moriyama, Y. Koide, and M. Murakami..
  12. "Effect of Pd or Pt addition to Ti/Al ohmic contact materials for n-type AlGaN." Appl. Phys. Letts. vol. 80, No. 16, p. 2934-2936. April 22, 2002. S. Murai, H. Masuda, Y. Koide, and M. Murakami,
  13. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN."Proceedings of International Workshop of Nitride Semiconductors, IPAP Conference Series 1, p. 821-824, 2000. Y. Koide, T. Arai, and M. Murakami
  14. "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN." J. Appl. Phys., vol 92, No. 7, p. 3657-3661, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki
  15. "Influence of oxygen on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 3rd Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Oct. 9-12, 2002, Hakone, Japan, p. 27-30, 2002. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  16. "Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." Proceedings of the 10th International Symposium for Advanced Materials, March 10-13, 2003, Tsukuba, Japan, p 89-90, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  17. "Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." Proceedings of the 1st International National Institute for Materials Science Conference, March 17-19, 2003, Tsububa, Japan, p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  18. "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." Physica Status Solidi.(b), 240, No.2, p. 356-359, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.

-International Conference Presentations-(1５)

  1. "Dpendence of electrical properties on work functions of metals contacting to p-type GaN." 2nd Int. Symp. on Control of Semiconductor Interfaces, (Karuizawa, Japan) Abst. B5-5, p.45. October, 1996. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai, M. Koike, and M. Murakami
  2. "Effects of annealing ambience on electrical properties of Ohmic contacts to p-GaN." 40th Electronic Materials Conference (1998 EMC), (University of Virginia, Charllotesville, USA), June 22-24, 1998. Y. Koide, T. Maeda, S. Fujita, T. Uemura, N. Shibata, and M. Murakami
  3. "Ohmic contact materials to p-ZnSe and p-GaN." 25th International Symposium on Compound Semiconductors (ISCS '98), (Nara, Japan) Abst. TuP-39, October 12-16, 1998. Y. Koide, T.Kawakami, and M. Murakami
  4. Invited Talk, "Ohmic contact materials for p-type GaN." Fall Meeting of 98 MRS, November 30-December 4, 1998, (Boston, USA) Session G9, Abst. p.54. M. Murakami, Y. Koide, T. Kawakami, T. Maeda, M. Suzuki, T. Uemura, and N. Shibata
  5. "Current transport mechanims of low-resistance TaTi Ohmic contacts for p-GaN." 41th Electronic Materials Conference (1999 EMC) Session AA, (University of Carifornia Santa Barbara, USA), June 30-July 2, 1999. Y. Koide, M. Suzuki, T. Arai, T. Kawakami, T. Uemura, N. Shibata, and M. Murakami.
  6. Invited Talk, "Low-resistance Ohmic contact materials for p-GaN." The 1999 Joint International Meeting of ECS, October 17-22, 1999, (Honolulu, USA), Abst. vol. 99-2, No. 761. Y. Koide, T. Maeda, M. Suzuki, T. Kawakami, T. Uemura, N. Shibata, and M. Murakami
  7. "Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," 42th Electronic Materials Conference, Denver (Colorado, USA) Session J, Abst. p. 18, June 21-July 22, 2000.Y. Koide, T. Maeda, and M. Murakami
  8. Invited Talk, "Critical issues for development of thermally sable, low resistance Ohmic contact materials for p-type GaN." The 10th International Conference of Solid Films and Surfaces, July 9-14, 2000, (Princeton, USA), Abst. Tu-B-1500. Y. Koide and M. Murakami
  9. "Deterioration mechanism of low-resistance TaTi Ohmic contact for p-GaN." The International Union of Materials Research Societies, 6th International Conference in Asia, Session F: GaN and Related Wide Band Gap Semiconductors, Hong Kong (Hong Kong) Abst. F5.4, July 23-26, 2000. Y. Koide, T. Arai, S. Szuki, T. Kawakami, and M. Murakami
  10. "Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN." International Workshop on Nitride Semiconductors -IWN2000-, Septermber 24-27, 2000, (Nagoya, Japan), Abst. PTE-24. Y. Koide, T. Arai, and M. Murakami.
  11. Invited Talk, "Critical isuures for development of low-resistance ohmic contacts for p-GaN." Frontier Science Research Conferences, Nitride Materials FSRC, November 19-21, 2001 (La Jolla, USA), Abst. p. 25. Y. Koide.
  12. Invited Talk, "Interaction between Mg-H complex and electron beam or oxygen in Mg-doped GaN epilayer." 2002 Fall Materials Research Society Meeting, December 1-6, 2002 (Boston, USA). Session L, L12.1, Abst. p. 162. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  13. "Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." The 10th International Symposium for Advanced Materials (ISAM10), March 10-13, 2003, (Tsukuba Japan) Abst. 89-90. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  14. "Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." he 1st International National Institute for Materials Science Conference (NIMSIC), March 17-19, 2003, (Tsububa, Japan), p. 3-4, 2003. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.
  15. "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." The 5th International Conference of Nitride Semiconductors (ICNS5), May 25-30, 2003, (Nara Japan). Abst. Tu-A4.4. Y. Koide, D.E. Walker Jr. B.D. White, L. J. Brillson, T. Itoh, R.L. McCreery M. Murakami S. Kamiyama, H. Amano, and I. Akasaki.

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