Diamond Device Physics -˜_•Άi‚P‚Pj-

  1. "Peculiarity of depletion region in diamond pn-junction." Jpn. J. Appl. Phys. Part 1, vol. 42, No. 1, p. 6800-6803, 2003. Y. Koide.
  2. "Characteristics of depletion layer in diamond pn-junction." Proceedings of the 2003 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Augurst 21-24, 2003, Gangneung, Korea, p. 281-284, 2003. Y. Koide.
  3. "Analysis of electron statistics including compensation and deep-dopant effects for phosphous-doped n-type diamond." Jpn. J. Appl. Phys. Part 1, vol. 43, No. 6A, p. 3307-3310, 2004. Y. Koide.
  4. "Depletion layer in pn-junction of diamond with phosphorus donor and boron acceptor." Diamond Relat. Mat. vol. 13, No. 11-12, p. 1963-1966, 2004. Y. Koide.
  5. "Theoretical analysis of electron statistics for n-type diamond." Material Science Forum, vol. 475-479, p. 1719-1724, 2005.  Y. Koide
  6. "Analysis for Electron Concentrations in n-Diamond/III-Nitride Heterostructure and Phosphorus delta-Doped Structure in Diamond," Jpn. J. Appl. Phys. Part 1, vol.44, No. 1A, p. 55-59, 2005. Y. Koide
  7. "Enhancement of donor ionization in phosphorus-doped n-diamond." Appl. Surf. Sci. vol. 244, p.26-29, 2005. Y. Koide.
  8. gAdmittance spectroscopy for phosphorus-doped n-type diamond epilayer,h Appl. Phys. Lett., vol. 86, June 6, p. 2321051-2321053 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  9. "Special issue on narrow and wide-bandgap semiconductor materials - Preface." Materials Transactions JIM, vol. 46, No. 9, p. 1957-1957, 2005. Y. Koide and M. Murakami
  10. "Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer," Diamond Relat. Mater. vol. 14, No. 11-12, p. 2011-2014, 2005, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  11. "Simulation of Band Diagram for CVD Diamond Surface Conductivity," Jpn. J. Appl. Phys. vol. 44, No. 12, 2005, p. 8378-8382. S. Kono and Y. Koide.

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  1. Oral, "On the peculiarity of depletion layer in diamond pn-junction." The 50th American Vacuum Society Meeting (50th AVS), Electronic Materials and Devices, EM-WeA2, Abst. p. 127, November 2-7, 2003. (Baltimore, USA) Abst. p. , Y. Koide.
  2. Oral, "Depletion layers in schottky and pn junctions for diamond with deep dopants," The 9th International Conference on New Diamond Science and Technology (ICNDST-9) March 26-29, 2004 (Tokyo, Japan) Abst. 6-4. Y. Koide
  3. Oral, "Enhancement of donor ionizaiton in phosphorus-doped n-diamond." The 12th International Conference of Solid Films and Surfaces (ICSFS-12), June 21-25, 2004 (Hamamatsu, Japan) Y. Koide.
  4. Oral, "Theoretical analysis of electron statistics for n-type diamond." The Fifth Pacific Rim International Conference on Advanced Materials and Processing (PRICM-5), Nov.2-5, 2004 (Beijing, China) Y. Koide
  5. Oral, "Admittance spectroscopy of phosphorus-doped n-diamond homoepitaxial layer." The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, AIST, (Tsukuba, Japan) Session ADD Project 9-1, Abst. p.61, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  6. Oral, "Simulation of band diagram for CVD diamond surface conductivity." The International Conference on New Diamond Science and Technology (ICNDST-10), May 11-14, 2005, (Tsukuba, Japan), P5-10, Abst. p.194, S. Kono and Y. Koide.
  7. Oral, "Admittance spectroscopy of phosphorus-doped n-diamond epilayer," 24th Electronic Materials Symposium (EMS-24), July 4-6, 2005, (Matsuyama, Japan), Special Session: Characterization of Wide-Bandgap Semiconductors, Y. Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, and T. Sakai.
  8. Oral, "Surface Conductive Layer of CVD Diamond: Simulation of Surface Energy Band." The 3rd Int. Symposium on Mechanical Science based on Nanotechnology, Nov. 18-19, 2005, (Sendai, Japan), S. Kono and Y. Koide.
  9. Oral, "Surface Conductive Layer of CVD Diamond: Simulation of Surface Energy Band," Int. Symposium on Surface Physics 2006, Jan. 10-13, 2006, (Shizukuishi, Japan), S. Kono and Y. Koide.

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