Diamond Electron Devices -論文（２１）-

  1. "Electric Field Breakdown of Lateral Schottky Diodes of Diamond." Jpn. J. Appl. Phys. vol.46, No.9, p. L196-L198, 2007. T. Teraji, S. Koizumi, Y. Koide, and T. Ito.
  2. "Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond." Appl. Surf. Sci., vol.254, p.6273-6276, 2008. T. Teraji, S. Koizumi, Y. Koide, and T. Ito.
  3. "Ohmic contact for p-type diamond without postannealing." J. Appl. Phys., vol. 104, p. 016104-1 -016104-3, 2008. T. Teraji, S. Koizumi, and Y. Koide.
  4. "Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment," T. Teraji, Y. Garino, Y. Koide, and T. Ito, J. Appl. Phys, 105, 126109, 2009.
  5. "High-temperature stability of Au/p-type diamond Schottky diode," T. Teraji, Y. Koide, and T. Ito, Phys. Stat. Sol. RRL 3, No. 6, p. 211-213 2009.
  6. "P-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, and T. Ito, Phys. Stat. Sol. (a), 206, 2082, 2009.
  7. "Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study," Y. Garino, T. Teraji, S. Koizumi, Y. Koide, T. Ito, Physica Status Solidi A, vol. 207, p.1460-1463, 2010.
  8. "Extreme dielectric strength in boron doped homoepitaxial diamond," P. N. Volpe, P. Muret, J. Pernot, F. Omnes, T. Teraji, Y. Koide, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, S. Scharnholz, Appl. Phys. Lett., vol. 97, No. 22, 223501, 2010.
  9. "Non-destructive detection of killer defects of diamond Schottky barrier diodes," T. Ohmagair, T. Teraji, Y. Koide, J. Appl. Phys. vol. 110, 56105, 2011.
  10. "Controlled formation of wrinkled diamond-like carbon (DLC) film on grooved poly(dimethylsiloxane) substrate," Original Research Article," S. Nagashima, T. Hasebe, T. Daiju, T. Horikoshi, M. Ochiai, S. Tanigawa, Y. Koide, A. Hotta, T. Suzuki, Diamond and Related Materials, vol. 22, 48-51, 2012.
  11. "Amorphous silicon diamnd based heterojunctions with high rectification ratio,” Original Research Article, Mohamed Boutchich, Jose Alvarez, Djicknoum Diouf, Pere Roca i Cabarrocas, Meiyong Liao, Imura Masataka, Yasuo Koide, Jean-Paul Kleider, J. of Non-Crystalline Solids, In Press, Corrected Proof, Available online 12 January 2012
  12. "Localized mid-gap-states limited reverse current of diamond Schottky diodes," T. Teraji, M. Y. Liao, and  Y. Koide, J. Appl. Phys. vol. 111, 104503 (2012).
  13. "Chemical Vapor Deposition of 12C Isotopically Enriched Polycrystalline Diamond," T. Teraji, T. Taniguchi, S. Koizumi, K. Watanabe, M. Y. Liao, Y. Koide, J. Isoya, Jpn. J. Appl. Phys., vol. 51, No. 9, 090104 (2012) .
  14. “Effective use of source gas for diamond growth with isotopic enrichment,” T. Teraji, T. Taniguchi, S. Koizumi, Y. Koide, and J. Isoya, Appl. Phys. Express. vol. 6, 055601 (2013).
  15. “Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along [1120] and [1100] Zone-Axes of AlN for Polarity Determination,” M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda, Jpn. J. Appl. Phys vol. 52, 08JE15 (2013).
  16. “Temperature and light intensity dependence of photocurrent transport mechanisms in InGaN p-i-n homojunction solar cells,” L. Sang, M. Y. Liao, Y. Koide, and M. Sumiya, J. Appl. Phys. vol. 52, 08JF04 (2013).
  17. “Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy,” M Imura, S.Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, J. Appl. Phys. vol. 114, 033505 (2013).
  18. “Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures,” L. Sang, J. Hu, R. Zou, Y. Koide, M. Y. Liao, Sci. Rep. vol. 3, 2368 (2013).
  19. “Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy,” M. Imura, S. Tsuda, T. Nagata1, H. Takeda1, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi, Appl. Phys. Lett. vol. 103, 162110 (2013).
  20. “High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts,” R. Zou, Z. Zhang, J. Hu, L. Sang, Y. Koide, and M. Y. Liao, Nanotechnology, vol. 24, 495701 (2013).
  21. “Multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure,” L. Sang, M. Y. Liao, Q. Liang, M. Takeguchi, B. Dierre, B. Shen, T. Sekiguchi, Y. Koide, M. Sumiya, Adv. Mater. DOI: 10.1002/adma.201304335 (2013).

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