Epitaxial Growth of AlxGa1-xN by MOVPE.
17th Int. Conf. on Solid State Devices and Materials, Tokyo,
(Japan) Abst. p.6-7, August, 1985 Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M.
Hashimoto
Formation of Si-SiO2 Interface at Low
Temperatures Using Microwave-Excited Plasma. 2nd Int. Conf. on
Formation of Semiconductor Interface, Takarazuka, (Japan) Abst.
p.161, November, 1988 S. Zaima, T. Kaida, Y. Koide,
Y. Yasuda
Growth Prcesses in The Initial Stage of
Deposition of Ge Films on (100)Si Surfaces by GeH4 Source
Molecular Beam Epitaxy. 9th Int. Conf. on Crystal Growth, Sendai
(Japan), Abst. p. 5, August, 1989 Y. Koide, S. Zaima, N. Ohshima, and Y. Yasuda
Formation of a Superstructure in The
Initial Stage of Ge Epitaxial Growth on Si(100) Substrate. 5th
Int. Conf. on Solid Films and Surfaces, Rhode Island, (USA) Abst.
Session 14A, August, 1990 N. Ohshima, Y. Koide, S. Zaima, and
Y. Yasuda
Observation of Si-SiO2 Interface States
within The Conduction Band by Tunneling Current Spectroscopy. 3rd
Int. Conf. on Formation of Semiconductor Interface, Rome, (Italy)
Abst. p.168, May, 1991 M. Sakashita, S. Zaima, Y. Koide,
and Y. Yasuda
Formation of Interfacial Layers and
Electrical Conduction Mechnisms Dominating The Contact Resistivity
in Refractory Metal-Metal-Si Contacts. 3rd Int. Conf. on Formation
of Semiconductor Interface, Rome, (Italy) Abst. p.89, May, 1991
T. Yamauchi, M. Kataoka, S. Zaima,
Y. Koide, and Y. Yasuda
Atomic Mixing Phenomena and Changes in
Faceted Structure of Ge Films Grown on (100)Si by Thermal
Annealing. 7th Int. Conf. on Vapor Growth and Epitaxy, Nagoya,
(Japan) Abst. p.165, July, 1991 N. Ohshima, Y. Koide, S. Zaima, and
Y. Yasuda
In-situ RHEED Study on Growth Processes in
The Initial Stage of SiGe Alloy Film Deposition by Gas Source
Molecular Beam Epitaxy. 7th Int. Conf. on Vapor Growth and
Epitaxy, Nagoya, (Japan) Abst. p.238, July, 1991 Y. Koide, F. Furukawa, S. Zaima, and Y. Yasuda
In-situ RHEED Study on The Effect of Light
Irradiation on Ge/Si Heteroepitaxial Growth by GeH4 Source
Molecular Beam Epitaxy. 3rd Int. Conf. Chemcal Beam Epitaxy and
Related Growth Techniques, Oxford (UK), Abst. F6, September, 1991
Y. Koide, K. Itoh, S. Zaima, and Y. Yasuda
Initial Growth of Ge Films on Si(111)7x7
Surfaces by Gas Source Molecular Beam Epitaxy. 1st Int. Conf. on
Atomically Controlled Surfaces and Interfaces, Tokyo, (Japan)
Abst. p.142, November, 1991 N. Ohshima, S. Zaima, Y. Koide,
and Y. Yasuda
Initial Stage of Ge Film Grown on (311)Si
by Gas Source Molecular Beam Epitaxy. 10th Int. Conf. on Crystal
Growth, San Diego, (USA) Abst. p. 321, August, 1992 Y. Yasuda, K. Itoh, N. Ohshima, Y. Koide,
S. Zaima
Growth Behaviors of the Initial Ge
Two-dimensional Layers on (100)Si Substrates and Photo-irradiation
Effects by GeH4 Source Molecular Beam Epitaxy. 4th Int. Conf. on
the Formation of Semiconductor Interfaces, Julich, (Germerny)
Abst. July, 1993 M. Okada, Y. Koide, S. Zaima, and
Y. Yasuda
Photo-irradiation Effects in the Initial
Stage of Si Homoepitaxial Growth by Si2H6 Source MBE. 1st Int.
Conf. on Photo-Excited Processes and Applications, Sendai (Japan)
Abst. p.156, Ocotber, 1993 . Y.Koide, M.Okada, S.Zaima, and Y.Yasuda
High-spatial Resolution Analysis of Semiconductor Superlattices by nm-sized
Electron Probe. 1st Int. Symp. on Control of Interfaces of Semicon-ductor
Interfaces, Karuizawa (Japan), Abst. A5, November, 1993. N. Tanaka, Y. Koide, S. Zaima, and
Y. Yasuda