Invited Talk 1, "Ohmic contact materials for compound semiconductors". 36th Electronic Materials Conference, LosAngeles (California, USA), Abst. p. 210 , September, 1994. M. Murakami, T. Oku,Y.
Koide, and K. Tsukui
"Cd-based Ohmic Contact Materials to p-type ZnSe". 7th Int. Conf. on II-VI Compound Semiconductors and Devises, (Edingburgh, UK), Abst. Fr9, August 12 - 17, 1995. Y. Koide, K. Hashimoto, H. Ishikawa, K. Tsukui, T. Oku, N.
Teraguchi, Y. Tomomura, A. Suzuki, and M. Murakami
"Dpendence of electrical properties on work functions of metals contacting to p-type GaN." 2nd Int. Symp. on Control of Semiconductor Interfaces, (Karuizawa, Japan) Abst. B5-5, p.45. October, 1996. Y. Koide, H. Ishikawa, S. Kobayashi, S. Yamazaki, K. Nagai,
M. Koike, and M. Murakami
"Contact resistance between carbide and non-carbide forming metals and p-diamond." 1st Symp. on Diamond Electronics Devices, (Osaka, Japan) Abst. p.28, March 9-10, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M.
Murakami
"Current transport mechanism through p-diamond/metal interfaces." 5th Int. Conf. on New Diamond and Technology, (Tours, France) Abst.11.090, September, 1996. Y. Koide, M. Yokoba, A. Otsuki, A. Ako, T. Oku, and M.
Murakami
Invited Talk 2, "Ohmic contacts of wide gap compound semiconductors." The 192nd Meeting of The Electrochemical Society, Inc. And the 48th Annual Meeting of the International Society of Electrochmistry, (Paris, France)., August 31 - September 5, 1997. M. Murakami and Y. Koide
"Schottky barrier heights of contact metals to p-ZnSe." The 1997 U.S. Workshop on the Physics and Chemistry of II-VI Materials, Santa Barbara (California, USA), Abst. p. 129, October 21 - 23, 1997. Y. Koide, T. Kawakami, N. Teraguchi, Y. Tomomura, A. Suzuki,
and M. Murakami
Invited Talk 3, "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD." 2nd Symp. on Diamond Electronics Devices, (Osaka, Japan) Abst. p.8, March 9-10, 1998. Y. Koide, T. Toyama, and M. Murakami
"Electrical properties of p-ZnSe/metals interfaces with intermediate
semiconductor layers", Third Pacific Rim International Conference
on Advanced Materials and Processing (PRICMﾐ3), July 12-16, 1998, Honolulu,
(Hawaii, USA). Y. Koide, T. Kagawa, T. Oku, H. Mori, M. Murakami, N.
Teraguchi, Y. Tomomura, and A. Suzuki
"Electrical properties at p-ZnSe/metal interfaces of annealed contacts.", Third Pacific Rim International Conference on Advanced Materials and Processing (PRICMﾐ3), July 12-16, 1998, Honolulu, (Hawaii, USA) T. Kawakami, Y. Koide, M. Murakami,
N. Teraguchi, Y. Tomomura, and A. Suzuki
"Effect of annealing ambience on electrical properties of Ohmic contacts to p-GaN." 40th Electronic Materials Conference, Charlottesville (Virginia, USA) Abst. Session U,
U5, p.12. June 24-26, 1998. Y. Koide, T. Maeda, S. Fujita, T. Uemura, N. Shibata, and M.
Murakami
"Ohmic contact materials to p-ZnSe and p-GaN." 25th International
Symposium on Compound Semiconductors (ISCS'98), (Nara, Japan) Abst. TuP-39,
December 12-16, 1998. Y. Koide, T.Kawakami, and M. Murakami
"Near-noble Transition-Metal-Based Ohmic contacts to p-InP: Comparison of Base Metals (Ni, Pd)." 25th International Symposium on Compound Semiconductors (ISCS '98), (Nara, Japan) Abst. TuP-39, October 12-16, 1998. A. Yamaguchi, H. Asamizu, T. Okada, Y. Iguchi, and T. Saito,
Y. Koide, and M. Murakam
Invited Talk 4, "Ohmic contact materials for p-type GaN. "Fall Meeting of 98 MRS, November 30-December 4, 1998, (Boston, USA) Session G9, Abst. p.54. M. Murakami, Y. Koide, T. Kawakami,
T. Maeda, M. Suzuki, T. Uemura, and N. Shibata
"Current transport mechanisms of low-resistance TaTi Ohmic contacts
for p-GaN." 41th Electronic Materials Conference, Santa Barbara (California, USA) Session AA, Abst. p.66. June 30-July 2, 1999. Y. Koide, M. Suzuki, T. Arai, T. Kawakami, T. Uemura, N.
Shibata, Y. Taga, and M. Murakami
Invited Talk 5, "Low-resistance Ohmic contact materials for p-GaN." The 1999 Joint International Meeting of ECS, October 17-22, 1999, (Honolulu, USA), Abst. vol. 99-2, No. 761. Y. Koide, T. Maeda, M. Suzuki, T. Kawakami, T. Uemura, N.
Shibata, and M. Murakami
"The effect of a thin antimony layer addition on Pd/Zn ohmic contacts for p-type InP." Third International Symposium on Control of Semiconductor Interfaces (ISCSI-III), (Karuizawa, Japan), Abst. A5-5, Octorber 25-29, 1999. K. Asamizu, T. Yamaguchi, Y. Koide,
and M. Murakami
"Roles of NiO layers on electrical properties of NiAu-based Ohmic contacts for p-type GaN," 42th Electronic Materials Conference, Denver (Colorado, USA) Session J, Abst.
p. 18, June 21-July 22, 2000.Y. Koide, T. Maeda, and M. Murakami
Invited Talk 6, "Critical issues for development of thermally sable, low resistance
Ohmic contact materials for p-type GaN." The 10th International Conference
of Solid Films and Surfaces, July 9-14, 2000, (Princeton, USA), Abst. p. Tu=B-1500. Y. Koide and M. Murakami
"Surface damages of diamond-based electron
emitters," 7th Int. Conf. on New Diamond and Technology
(ICNDST-7), Hong Kong (Hong
Kong) Abst., July 25-29, 2000. Y. Koide, T. Asari, M. Itahashi, K. Umehara, M. Moriyama, T.
Hanada, and M. Murakami
"Deterioration mechanism of low-resistance
TaTi Ohmic contact for p-GaN." The International Union of
Materials Research Societies, 6th International Conference in
Asia, Session F: GaN and Related Wide Band Gap Semiconductors,
Hong Kong (Hong Kong) Abst. F5.4, July 23-26, 2000. Y. Koide, T. Arai, S. Szuki, T. Kawakami, and M.
Murakami
"Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN." International Workshop on Nitride Semiconductors -IWN2000-, Septermber 24-27, 2000, (Nagoya, Japan), Abst. PTE-24. Y. Koide, T. Arai, and M. Murakami
"CoAl Ohmic contact materials with improved surface morphology for p-type 4H-SiC", International Conference on Silicon Carbide and Related Materials 2001, (Tsukuba, Japan) Nobember, 2001. Osamu Nakatsuka, Y. Koide, and Masanori Murakami.
Invited Talk 7, "Critical issures for development of low-resistance Ohmic contacts for p-GaN." Frontier Science Research Conferences, Niride Materials, FSRC, November 19-21, 2001 (La Jolla, USA) Abst. p. 25. Y. Koide
"Effect of Co or Ni addition to TiAl Ohmic Contadt for p-Type 4H-SiC, 2002 Electronic Materials Conference, (44th EMC) Santa Barbara (Carifornia, USA) June 26-28, 2002, Session NN, Abst. p..57, O. Nakatsuka, R. Konishi, R. Yasukouchi, Y. Koide, and M. Murakami
Invited Talk 8, "Interaction between Mg-H complex and electron beam or oxygen in
Mg-doped GaN epilayer." 2002 Fall Materials Research Society Meeting,
December 1-6, 2002 (Boston, USA). Session L, L12.1, Abst. p. 162. Y. Koide,D.E. Walker Jr.B.D. White,L. J. Brillson,T. Itoh,R.L. McCreeryM. MurakamiS. Kamiyama,H. Amano, and I. Akasaki.
"Effects of annealing in oxygen ambient on luminescence and vibrational properties of Mg-doped GaN." The 10th International Symposium for Advanced Materials (ISAM10), March 10-13, 2003, (Tsukuba Japan) Abst. 89-90. Y. Koide,D.E. Walker Jr.B.D. White,L. J. Brillson,T. Itoh,R.L. McCreeryM. MurakamiS. Kamiyama,H. Amano, and I. Akasaki.
"Effects of oxygen on vibrational and luminescnece properties of Mg-doped GaN." he 1st International National Institute for Materials Science Conference, March 17-19, 2003, (Tsukuba, Japan), p. 3-4, 2003. Y. Koide,D.E. Walker Jr.B.D. White,L. J. Brillson,T. Itoh,R.L. McCreeryM. MurakamiS. Kamiyama,H. Amano, and I. Akasaki.
"Influence of oxygen on luminescence and vibrational spectra of Mg-doped
GaN." The 5th International Conference of Nitride Semiconductors (ICNS5), May 25-30, 2003, (Nara Japan). Abst. Tu-A4.4. Y. Koide,D.E. Walker Jr.B.D. White,L. J. Brillson,T. Itoh,R.L. McCreeryM. MurakamiS. Kamiyama,H. Amano, and I. Akasaki.
Invited Talk 9, "Development of Ohmic contact Materials for Compound Semiconductors," M. Murakami, Y. Koide, M. Moriyama, and T. Tsukimoto, American Vacuum Society (AVS) 50th International Symposium and Exhibition, 11/2-7, 2003. (Baltimore, USA), Abst. EM-ThM4.