AlGaN：-論文（７）-, 日本語ホームへ, English Main Page,

1. Behaviour of Zn as Dopant in The Photoluminescence of Al_xGa_1-xN. Solid State Commun. vol. 57, No. 1, p.17-20, January, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
2. Edge Emission of Al_xGa_1-xN. Solid State Commun. vol. 60, No. 6, p.509-512, June, 1986. M. R. H. Khan, Y. Koide, N. Sawaki, and I. Akasaki
3. Epitaxial Growth and Properties of Al_xGa_1-xN by MOVPE. J. Electrochem. Soc. vol. 133, No. 9, p.1956-1960, September, 1986. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto
4. Energy Band-gap Bowing Parameter in An Al_xGa_1-xN Alloy. J. Appl. Phys. vol.61, No.9, p.4540-4543, May, 1987. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki
5. Effect of an AlN Buffer Layer on Al_xGa_1-xN/α-Al₂O₃ Heteroepitaxial Growth by MOVPE. Jpn. J. Appl. Phys. vol. 27, No. 7, p.1156-1161, July, 1988. Y. Koide, K. Itoh, N. Itoh, N. Sawaki, and I. Akasaki
6. Effects of AlN Buffer Layer on Crystallographic Structure and Electrical and Optical Properties of GaN and Ga_1-xAl_xN (0<x<0.4) Films Grown on Sapphire Substrates by MOVPE. J. Crystal Growth, vol. 98, p.209-219, May, 1989. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki
7. ＭＯＶＰＥによるＡｌＧａＮ／α−Ａｌ₂Ｏ₃ヘテロエピタキシーにおけるＡｌＮバッファ層の効果，　日本結晶成長学会誌，vol.13，No.4，p.8-15，1986年7月，小出康夫, 天野　浩, 平松和政, 澤木宣彦, 赤崎　勇

-国際会議発表-

1. Epitaxial Growth of Al_xGa_1-xN by MOVPE. 17th Int. Conf. on Solid State Devices and Materials, Tokyo, (Japan) Abst. p.6-7, August, 1985. Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, and M. Hashimoto

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